Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: Provided is an electromagnetic shielding material having improved electromagnetic shielding properties. The present invention relates to an electromagnetic shielding material having a structure in which at least two metal foils are laminated via at least one insulating layer, the electromagnetic shielding material comprising at least one metal oxide layer on at least one boundary surface over which each metal foil is in contact with the insulating layer, the metal oxide layer having a thickness of from 1 to 30 nm.

Abstract: A metal foil for electromagnetic shielding 10, comprising a base 1 consisting of a metal foil, an underlayer 2 including Ni formed on one or both surfaces of the base, and a Sn—Ni alloy layer 3 formed on a surface of the underlayer, wherein the Sn—Ni alloy layer includes 20 to 80 weight % of Sn, and when a total deposition amount of Sn is represented by TSn [?g/dm2], a percentage of Sn in the Sn—Ni alloy is represented by ASn [weight %], a total deposition amount of Ni is represented by TNi [?g/dm2], and a percentage of Ni in the Sn—Ni alloy is represented by ANi [weight %], TSn: 500 to 91000 ?g/dm2, TNi: 2200 to 236000 ?g/dm2, 170000=>{TNi?TSn×(ANi/ASn)}=>1700.

Abstract: An AGC circuit for a radio receiver includes a detector converting a high frequency signal into a baseband signal. To reduce generation of a DC offset, the AGC circuit includes: a variable gain amplifier having an amplifier circuit and a high-pass filter, the amplifier circuit amplifying the baseband signal with a variable gain and the high-pass filter coupled to the amplifier circuit and having a cut-off frequency which is variable; a controller supplying a gain control signal; and a blocker temporarily blocking the high frequency signal. Using the block control signal, the controller causes the blocker to start blocking the high frequency signal, before the cut-off frequency of the high-pass filter is switched from high to low.

Abstract: Provided is a laminated body of at least one metal foil and resin layers, which is suitable for drawing. The laminated body includes at least one metal foil and at least two resin layers. The laminated body has a thickness of 25 to 500 ?m. In the laminated body, both surfaces of each metal foil are closely laminated to the resin layers, and the relationships: 60??Y?150, and 1.4??b/?Y are satisfied, in which ?Y represents a nominal stress (MPa) at a nominal strain of 5% when a tensile test according to JIS K 7127: 1999 is performed on the laminated body, and ?b represents a nominal stress (MPa) at a nominal strain at which the metal foil in the laminated body is broken when a tensile test according to JIS K 7127: 1999 is performed on the laminated body.

Abstract: Provided is an electromagnetic wave shielding material including a multilayer structure in which at least one metal foil and at least two resin layers are closely laminated, wherein both surfaces of each metal foil are closely laminated to the resin layers; wherein each metal foil satisfies the following relationship with each of the two resin layers adjacent to the metal foil: 0.02?VM/VM?1.2, in which: VM is a volume fraction of the metal foil relative to a total volume of the metal foil and the resin layer; VM? is (?R??R?)/(?M+?R??R?); ?M is a true stress (MPa) of the metal foil at breakage when a tensile stress is applied to the metal foil; ?R is a true stress (MPa) of the resin layer at breakage when a tensile stress is applied to the resin layer; and ?R? is a true stress (MPa) of the resin layer when a logarithmic strain same as a logarithmic strain at breakage of the metal foil is applied to the resin layer.

Abstract: A metal foil for electromagnetic shielding 10, comprising a base 1 consisting of a metal foil, an underlayer 2 including Ni formed on one or both surfaces of the base, and a Sn—Ni alloy layer 3 formed on a surface of the underlayer, wherein the Sn—Ni alloy layer includes 20 to 80 weight % of Sn, and when a total deposition amount of Sn is represented by TSn [?g/dm2], a percentage of Sn in the Sn—Ni alloy is represented by ASn [weight %], a total deposition amount of Ni is represented by TNi [?g/dm2], and a percentage of Ni in the Sn—Ni alloy is represented by ANi [weight %], TSn: 500 to 91000 ?g/dm2, TNi: 2200 to 236000 ?g/dm2, 170000=>{TNi?TSn×(ANi/ASn)}=>1700.

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: Provided is an electromagnetic wave shielding material that can exhibit improved electromagnetic wave shielding property, light-weight property and formability. The present invention relates to an electromagnetic wave shielding material comprising a laminate in which N number of metal foils each having a thickness of 5 to 100 ?m and N+1 number of resin layers each having a thickness of 5 ?m or more are alternately laminated or a laminate in which N+1 number of metal foils each having a thickness of 5 to 100 ?m and N number of resin layers each having a thickness of 5 ?m or more are alternately laminated, N being an integer of 2 or more, wherein thickness of the laminate is from 100 to 500 ?m, and wherein, when a thickness center of the laminate is used as a reference, for all pairs of interfaces at which sequences of the resin layers and the metal foils on both upper and lower sides of the reference correspond to each other, distances from the reference to the interfaces have an error of within ±10%.

Abstract: A copper foil composite comprising a copper foil and a resin layer laminated thereon, satisfying an equation 1: (f3×t3)/(f2×t2)=>1 wherein t2 (mm) is a thickness of the copper foil, f2 (MPa) is a stress of the copper foil under tensile strain of 4%, t3 (mm) is a thickness of the resin layer, f3 (MPa) is a stress of the resin layer under tensile strain of 4%, and an equation 2: 1<=33f1/(F×T) wherein f1 (N/mm) is 180° peeling strength between the copper foil and the resin layer, F(MPa) is strength of the copper foil composite under tensile strain of 30%, and T (mm) is a thickness of the copper foil composite, wherein a Sn layer having a thickness of 0.2 to 3.0 ?m is formed on a surface of the copper foil on which the resin layer is not laminated.

Abstract: A copper foil composite comprising a copper foil and a resin layer laminated thereon, satisfying an equation 1: (f3×t3)/(f2×t2)=>1 wherein t2 (mm) is a thickness of the copper foil, f2 (MPa) is a stress of the copper foil under tensile strain of 4%, t3 (mm) is a thickness of the resin layer, f3 (MPa) is a stress of the resin layer under tensile strain of 4%, and an equation 2: 1<=33f1/(F×T) wherein f1 (N/mm) is 180° peeling strength between the copper foil and the resin layer, F(MPa) is strength of the copper foil composite under tensile strain of 30%, and T (mm) is a thickness of the copper foil composite, wherein a Cr oxide layer is formed at an coating amount of 5 to 100 ?g/dm2. is formed on a surface of the copper foil on which the resin layer is not laminated.

Abstract: Provided is an electromagnetic shielding material having improved electromagnetic shielding properties. The present invention relates to an electromagnetic shielding material having a structure in which at least two metal foils are laminated via at least one insulating layer, the electromagnetic shielding material comprising at least one metal oxide layer on at least one boundary surface over which each metal foil is in contact with the insulating layer, the metal oxide layer having a thickness of from 1 to 30 nm.

Abstract: Provided is an electromagnetic shielding material having improved electromagnetic shielding properties, light weight properties and formability. The present invention relates to an electromagnetic shielding material having a structure in which at least three metal foils are laminated via insulating layers, wherein all of combinations of the metal foils and the insulating layers making up the electromagnetic shielding material satisfy the equation: ?M×dM×dR?3×10?3, in which: the symbol ?M represents conductivity of each metal foil at 20° C. (S/m); the symbol dM represents the thickness of each metal foil (m); and the symbol dR represents the thickness of each insulating layer (m).

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 ?m and less than or equal to 100 ?m. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

Abstract: An AGC circuit for a radio receiver includes a detector converting a high frequency signal into a baseband signal. To reduce generation of a DC offset, the AGC circuit includes: a variable gain amplifier having an amplifier circuit and a high-pass filter, the amplifier circuit amplifying the baseband signal with a variable gain and the high-pass filter coupled to the amplifier circuit and having a cut-off frequency which is variable; a controller supplying a gain control signal; and a blocker temporarily blocking the high frequency signal. Using the block control signal, the controller causes the blocker to start blocking the high frequency signal, before the cut-off frequency of the high-pass filter is switched from high to low.

Abstract: An optical element comprises an organic resin and bubbles distributed to have a number density increasing from a first plane of the optical element toward a second plane of the optical element, where a diameter of the bubbles is less than or equal to a wavelength of light which enters the optical element. At least one of the first plane and the second plane may have an uneven structure.

Abstract: A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying a second laser beam from a second laser to form a second linear-shaped laser beam. The method further includes overlaying the first linear-shaped laser beam and the second linear-shaped laser beam to form an overlayed linear-shaped laser beam, wherein the overlayed linear-shaped laser beam has a width and a length where the length is ten times or more as large as the width. The method also includes scanning a semiconductor film formed over a substrate with the overlayed linear-shaped laser beam to increase crystallinity of the semiconductor film, and patterning the semiconductor film to form a semiconductor layer which includes a channel formation region of a transistor.