Abstract: In a method for manufacturing a glass sealed body, a paste including powdered glass and a binder is discharged from an outlet whose shape is a closed curve to form a partition whose shape is a closed curve over a first glass substrate; the partition is heated so that the binder is volatilized and the powdered glass is fused to be a frit glass; and the frit glass and a second glass substrate are heated while disposing in close contact with each other, so that the frit glass and the second glass substrate are welded together to form a closed space by the frit glass, the first glass substrate, and the second glass substrate. A light-emitting element is sealed with the glass sealed body, so that the sealing is hardly broken even when impact or external force is applied.

Abstract: A timing signal generating part generates a timing signal at a preceding timing preceding a switchover timing between a video signal for the left eye and a video signal for the right eye by a predetermined offset time. When a transmitting time adjustment cause is detected by an adjustment cause detecting part at a generating timing of the timing signal, a timing signal transmitting part generates an adjusted timing signal by adjusting the transmitting time of the timing signal by a predetermined adjustment time at a transmitting time at which the transmitting time adjustment cause does not exist, adds adjustment time information including the information on the adjustment time to the adjusted timing signal, and wirelessly transmits the resultant signal to the wireless communication apparatus.

Abstract: A light-emitting element includes a conductive layer functioning as a first electrode, an electroluminescent layer, and a conductive layer functioning as a second electrode, and further includes an insulating material filling a defect portion in the electroluminescent layer so that the defect portion is sealed. In the light-emitting element, the conductive layer functioning as a second electrode overlaps with the conductive layer functioning as a first electrode with the electroluminescent layer and the insulating material interposed therebetween and is in contact with a top surface of the electroluminescent layer.

Abstract: A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.

Abstract: A lens sheet is provided which is configured to create, below the lens sheet, a region not irradiated with light when light is incident on the lens sheet from above. A photoelectric conversion element is efficiently irradiated with light incident on the lens sheet. In addition, a high-efficiency photoelectric conversion module is provided. The lens sheet includes a light-transmitting substrate having lens arrays on both sides, and the lens arrays each have lens regions and non-lens regions placed alternately (in stripes), in which an end portion of each lens region on the front side overlaps with an end portion of each lens region on the back side.

Abstract: A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion.

Abstract: The present invention provides a laser irradiation apparatus which can accurately control positions of beam spots of laser beams emitted from laser oscillators and the distance between the adjacent beam spots. A laser irradiation apparatus of the present invention includes a first movable stage with an irradiation body provided, two or more laser oscillators emitting laser beams, a plurality of second movable stages with the laser oscillators and optical systems provided, and a means for detecting at least one alignment maker. The first stage and the second stages may move not only in one direction but also in a plurality of directions. Further, the optical systems are to shape the laser beams emitted from the laser oscillators into linear beams on the irradiation surface.

Abstract: A first substrate which includes a reflective layer having an opening, a light-absorbing layer, and a material layer formed in contact with the light-absorbing layer over one of surfaces is provided; the surface of the first substrate over which the material layer is formed and a deposition target surface of the second substrate are disposed to face each other; and irradiation with laser light whose repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat a part of the material layer at a position overlapping with the opening of the reflective layer and deposit the part of the material layer over the deposition target surface of the second substrate.

Abstract: An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract: An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the present invention is to provide a manufacturing method of a semiconductor device including this laser irradiating method in a process. Therefore, the present invention is characterized in that the shapes of plural laser beams on the irradiating face are formed by an optical system in an elliptical shape or a rectangular shape, and the plural laser beams are irradiated while the irradiating face is moved in a first direction, and the plural laser beams are irradiated while the irradiating face is moved in a second direction and is moved in a direction reverse to the first direction.

Abstract: A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

Abstract: A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer.

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.

Abstract: An object is to provide a method for manufacturing a light-emitting device in which a defective portion is insulated. In addition, another object is to provide a manufacturing apparatus of a light-emitting device in which a defective portion is insulated. After a hemispherical lens is formed to overlap with a light-emitting element, the defective portion is detected. Then, the hemispherical lens overlapping with the light-emitting element including the detected defective portion may be irradiated with a laser beam having a low energy density, and the defective portion may be insulated by light condensed through the hemispherical lens.

Abstract: In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.