Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

Abstract: It is desirable that some voltage can be supplied as emergency backup even upon occurrence of abnormality such as a failure. The amplifier circuit in a semiconductor device supplies an output signal having a voltage produced by amplifying an input voltage Vin from a variable voltage source to one end of a coil load, and supplies a predetermined fixed voltage of 0V, for example, to the other end of the coil load to rotate the coil load with the voltage difference between these output signals, thus performing loading control of a CD tray and a DVD tray. The semiconductor device clamps the voltage of the output signal to a predetermined non-zero voltage so that a sufficient drive voltage can be obtained even if a loading control terminal T1 is grounded, thus realizing emergency backup loading control of the tray.

Abstract: A semiconductor integrated circuit includes: a switching control circuit having a first transistor and a second transistor coupled to an FET, and turning on and off the FET by turning on and off each of the first transistor and the second transistor, the FET attaining an OFF state when the first transistor is in an ON state and the second transistor is in an OFF state; a bias circuit supplying the FET with a bias voltage for turning off the FET when the first transistor and the second transistor are in an OFF state; and a protection control circuit turning off the FET by turning on the first transistor and turning off the second transistor when an abnormality is detected, and turning off the first transistor and the second transistor after a lapse of a predetermined time.

Abstract: It is desirable that some voltage can be supplied as emergency backup even upon occurrence of abnormality such as a failure. The amplifier circuit in a semiconductor device supplies an output signal having a voltage produced by amplifying an input voltage Vin from a variable voltage source to one end of a coil load, and supplies a predetermined fixed voltage of 0V, for example, to the other end of the coil load to rotate the coil load with the voltage difference between these output signals, thus performing loading control of a CD tray and a DVD tray. The semiconductor device clamps the voltage of the output signal to a predetermined non-zero voltage so that a sufficient drive voltage can be obtained even if a loading control terminal T1 is grounded, thus realizing emergency backup loading control of the tray.

Abstract: A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

Abstract: A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

Abstract: The invention provides a quick-drying disinfectant gel for hands that spreads well in rubbing into hands, spreads easily over the hands, forms no scum, and is not sticky before and after drying. The disinfectant gel for hands of the invention contains 0.01 to 2.0 wt % of a maleic anhydride polymer, 0.01 to 5.0 wt % of polysaccharides, 40 to 95 wt % of a lower alcohol, and water, with the total being 100 wt %.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

Abstract: There is provided a method of manufacturing a semiconductor device having a number of wiring layers, comprising forming an underlayer, the underlayer including a substrate, at least one underlayer wiring layer provided on the substrate, and a first attachment surface, forming at least one upper structure, the upper structure including at least one upper wiring layer and a second attachment surface, and positioning the upper structure and the underlayer and attaching the first and second attachment surfaces to each other.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering 40° C. of a temperature at which a stress migration is most accelerated.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: In the formation of a P-type rediffusion region adjacent to a source drain region in an N well, boron fluoride is implanted without a P well covered with a mask. And in the formation of an N-type rediffusion region adjacent to a source drain region in a P well, phosphorus is implanted with an N well covered with a mask. The dose of boron fluoride implanted without a mask is smaller than the dose of phosphorus.

Abstract: An insulating film has steps on its surface according to the steps on the substrate. The surface of the insulating film is planarized by CMP. The insulating film has thick portions and thin portions. In the thick and thin portions of the insulating film, first and second contact holes are made. The diameter of shallow second contact holes made in the thin portions of the insulating film is set smaller than that of deep first contact holes made in the thick portions of the insulating film. The first and second contact holes are filled with tungsten simultaneously by CVD techniques to form first and second contacts. The surfaces of the first and second contacts coincide with the surface of the insulating film.

Abstract: An engine control system for an internal combustion engine is equipped with dual air-fuel ratio feedback control systems for feedback controlling air-fuel ratios for two groups of injectors. The system includes a common air flow rate sensor, common to both groups, for detecting a common air flow rate introduced into the cylinders and an individual air-fuel ratio sensor for each group of injectors for determining an air-fuel ratio related value for its respective air-fuel ratio feedback control system. A feedback correction value for correction of fuel injection is determined from the air-fuel ratio ralated values for each air-fuel ratio feedback control system. An air flow rate is corrected based on the feedback correction values for correction of fuel injection for the dual air-fuel ratio feedback control systems. Virtual fuel injection rates for the two groups of injectors are then determined from the corrected air flow rate.