Abstract: The negative electrode active material according to the present embodiment includes alloy particle containing an alloy component and oxygen of 0.50 to 3.00 mass %. The alloy component contains Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %. The alloy particle contains: one or two phases selected from a D03 phase in which the Si content is from 0 to 5.0 at % and a ? phase in which the Si content is from 0 to 5.0 at %; one or two phases selected from an ? phase in which the Si content is from 0 to 5.0 at % and an ?? phase in which the Si content is from 0 to 5.0 at %; and an SiOx phase. The alloy particle has, in an X-ray diffraction profile, a peak having a largest integrated diffraction intensity in a range of 42.0 to 44.0 degrees of a diffraction angle 2?.

Abstract: A negative electrode active material is provided that is utilized in a nonaqueous electrolyte secondary battery, and that can improve the capacity per volume and charge-discharge cycle characteristics. The negative electrode active material according to the present embodiment contains an alloy having a chemical composition consisting of, in at %, Sn: 13.0 to 24.5% and Si: 3.0 to 15.0%, with the balance being Cu and impurities. The alloy particles contain a phase with a peak of the most intense diffraction line appearing in a range of 42.0 to 44.0 degrees of a diffraction angle 2?, the most intense diffraction line being a diffraction line having the largest integrated diffraction intensity in an X-ray diffraction profile. A half-width of the most intense diffraction line of the alloy particles is in a range of 0.15 to 2.5 degrees.

Abstract: A negative electrode active material is provided that is utilized in a nonaqueous electrolyte secondary battery, and that can improve the capacity per volume and charge-discharge cycle characteristics. The negative electrode active material according to the present embodiment contains an alloy having a chemical composition consisting of, in at %, Sn: 10.0 to 22.5% and Si: 10.5 to 23.0%, with the balance being Cu and impurities. The alloy has at least one type of phase among an ?? phase, an ? phase and a Sn phase in a Cu—Sn binary phase diagram, and the micro-structure of the alloy includes reticulate regions 20, and island-like regions 10 that are surrounded by the reticulate regions 20. The average size of the island-like regions 10 is, in equivalent circular diameter, 900 nm or less.

Abstract: The negative electrode active material according to the present embodiment includes alloy particle containing an alloy component and oxygen of 0.50 to 3.00 mass %. The alloy component contains Sn: 13.0 to 40.0 at % and Si: 6.0 to 40.0 at %. The alloy particle contains: one or two phases selected from a D03 phase in which the Si content is from 0 to 5.0 at % and a ? phase in which the Si content is from 0 to 5.0 at %; one or two phases selected from an ? phase in which the Si content is from 0 to 5.0 at % and an ?? phase in which the Si content is from 0 to 5.0 at %; and an SiOx phase. The alloy particle has, in an X-ray diffraction profile, a peak having a largest integrated diffraction intensity in a range of 42.0 to 44.0 degrees of a diffraction angle 2?.

Abstract: Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation.

Abstract: A negative electrode active material is provided that is utilized in a nonaqueous electrolyte secondary battery, and that can improve the capacity per volume and charge-discharge cycle characteristics. The negative electrode active material according to the present embodiment contains an alloy having a chemical composition consisting of, in at %, Sn: 13.0 to 24.5% and Si: 3.0 to 15.0%, with the balance being Cu and impurities. The alloy particles contain a phase with a peak of the most intense diffraction line appearing in a range of 42.0 to 44.0 degrees of a diffraction angle 2?, the most intense diffraction line being a diffraction line having the largest integrated diffraction intensity in an X-ray diffraction profile. A half-width of the most intense diffraction line of the alloy particles is in a range of 0.15 to 2.5 degrees.

Abstract: An intake apparatus of an internal combustion engine includes: an intake passage configured to communicate with a combustion chamber of an internal combustion engine having two intake valves per cylinder and supply intake air to the combustion chamber; and an intake flow control valve installed in the intake passage and configured to control a flow of intake air by an opening formed between a valve body and an inner surface of the intake passage when the valve is closed as the valve body is rotated, in which, when the intake flow control valve is closed, an opening length of the opening, which is formed on an end side in an arrangement direction of the two intake valves in a direction orthogonal to the arrangement direction and an intake air flow direction, is longer than an opening length of the opening, which is formed at a central portion of the intake flow control valve in the arrangement direction in the direction orthogonal to the arrangement direction and the intake air flow direction.

Abstract: An apparatus (10) for producing an SiC single crystal is used in the solution growth includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si—C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

Abstract: The provided by the disclosure is a SiC single crystal production method permitting suppression of temperature variation of a Si—C solution even in a case of long-time crystal growth. The SiC single crystal production method includes: a preparation step of preparing a production apparatus including a crucible, a seed shaft, and an internal lid; a formation step of heating the material in the crucible to form the Si—C solution; a growth step of bringing the seed crystal into contact with the Si—C solution to produce the Si—C single crystal on the seed crystal; an internal lid adjustment step of vertically moving one of the internal lid and the crucible relative to the other during the growth step to keep an amount of variation in vertical distance between the internal lid and the Si—C solution within a first reference range.

Abstract: A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

Abstract: A production method according to an embodiment includes a formation step (S1), a first growth step (S2), a recovery step (S3), and a second growth step (S4). In the formation step (S1), a Si—C solution containing Si, Al and C is formed in a crucible. In the first growth step (S2), a seed shaft is moved down to bring a SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si—C solution, and thereafter, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. After the first growth step (S2), the Al concentration in the Si—C solution is increased in the recovery step (S3). After the recovery step (S3), the Al-doped p-type SiC single crystal is further grown in the second growth step (S4).

Abstract: An intake apparatus of an internal combustion engine includes: an intake passage configured to communicate with a combustion chamber of an internal combustion engine having two intake valves per cylinder and supply intake air to the combustion chamber; and an intake flow control valve installed in the intake passage and configured to control a flow of intake air by an opening formed between a valve body and an inner surface of the intake passage when the valve is closed as the valve body is rotated, in which, when the intake flow control valve is closed, an opening length of the opening, which is formed on an end side in an arrangement direction of the two intake valves in a direction orthogonal to the arrangement direction and an intake air flow direction, is longer than an opening length of the opening, which is formed at a central portion of the intake flow control valve in the arrangement direction in the direction orthogonal to the arrangement direction and the intake air flow direction.

Abstract: Provided is a wireless microphone system comprising a microphone and a wireless receiver, wherein the wireless microphone system is provided with: a normal communication mode in which communication is performed by using a normal unique word (UWN) preset in both the microphone and the wireless receiver devices; a confidential setting mode in which a confidential unique word (UWX) is transmitted without being set in either of said devices; and a confidential communication mode in which communication is performed by both said devices by using the confidential unique word (UWX) set by the confidential setting mode.

Abstract: The production apparatus is used in production of single crystals by solution growth techniques. The production apparatus includes a seed shaft, a crucible, and a drive source. The seed shaft has a lower end surface to which a seed crystal is to be attached. The crucible contains a solution from which a single crystal is made. The drive source causes the crucible to rotate, and also varies the rotational speed of the crucible. The inner peripheral surface of the crucible includes a flow control surface which defines a non-circular cross-sectional shape. This single crystal production apparatus is capable of strongly stirring the solution contained in the crucible.

Abstract: A SiC single crystal production apparatus is used in production of SiC single crystals by solution growth techniques. The apparatus includes: a seed shaft having a lower end surface to which a SiC seed crystal is to be attached; a crucible that contains a Si—C solution; a stirring member that is immersed in the Si—C solution; and drive sources that cause relative rotation between the crucible and the stirring member. The lower end of the stirring member is located lower than the lower end of the SiC seed crystal attached to the lower end surface of the seed shaft.

Abstract: Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation.

Abstract: A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

Abstract: An apparatus (10) for producing an SiC single crystal is used in the solution growth includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si—C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

Abstract: Provided is a wireless microphone system comprising a microphone and a wireless receiver, wherein the wireless microphone system is provided with: a normal communication mode in which communication is performed by using a normal unique word (UWN) preset in both the microphone and the wireless receiver devices; a confidential setting mode in which a confidential unique word (UWX) is transmitted without being set in either of said devices; and a confidential communication mode in which communication is performed by both said devices by using the confidential unique word (UWX) set by the confidential setting mode.

Abstract: An SDRAM includes a DC-DC converter IC for generating a first internal power supply voltage from external power supply voltage, a regulator IC for generating a second internal power supply voltage lower than the first internal power supply voltage, from external power supply voltage, and a switching portion for supplying the first internal power supply voltage to an internal circuit in a normal operation mode and supplying the second internal power supply voltage to the internal circuit in a self-refresh mode. The switching unit allows the DC-DC converter IC and the regulator IC to operate simultaneously only for a prescribed overlapped period, at a time of operation mode switching. The DC-DC converter IC temporarily increases the first internal power supply voltage within the operating voltage range of the internal circuit in the overlapped period.