Patents by Inventor Koji Moriguchi
Koji Moriguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8139796Abstract: To provide a wireless microphone device that enables a circuit board, which is to be provided with an oscillation circuit, to be decreased in size without deteriorating radiation characteristics. The wireless microphone device is configured to include: a circuit board 5 that is sectioned into circuit areas 11a and 11b and makes the respective circuit areas function as antenna elements of a dipole antenna; an oscillation circuit 21 that is arranged in the circuit area 11b and generates a high frequency signal on the basis of a voice signal from a microphone 2a; a feeding path for feeding the high frequency signal to an electrically conductive layer 11 in the circuit area 11b through a feeding point positioned on the circuit area 11a side distant from the oscillation circuit 21; and a high frequency shield covering at least a part of the feeding path.Type: GrantFiled: September 10, 2007Date of Patent: March 20, 2012Assignee: TOA CorporationInventors: Mitsuru Nakashima, Koji Moriguchi
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Publication number: 20110018620Abstract: An SDRAM includes a DC-DC converter IC for generating a first internal power supply voltage from external power supply voltage, a regulator IC for generating a second internal power supply voltage lower than the first internal power supply voltage, from external power supply voltage, and a switching portion for supplying the first internal power supply voltage to an internal circuit in a normal operation mode and supplying the second internal power supply voltage to the internal circuit in a self-refresh mode. The switching unit allows the DC-DC converter IC and the regulator IC to operate simultaneously only for a prescribed overlapped period, at a time of operation mode switching. The DC-DC converter IC temporarily increases the first internal power supply voltage within the operating voltage range of the internal circuit in the overlapped period.Type: ApplicationFiled: July 27, 2010Publication date: January 27, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventors: Koji MORIGUCHI, Toshio TAKAHASHI
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Patent number: 7659033Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/?m and not more than 1500/?m, and with d002 being preferably not larger than 3.3650 ?, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.Type: GrantFiled: March 14, 2007Date of Patent: February 9, 2010Assignee: Sony CorporationInventors: Koji Moriguchi, Mitsuhara Yonemura, Kazuhito Kamei, Masaru Abe, Hideya Kaminaka, Noriyuki Negi, Atsuo Omaru, Masayuki Nagamine
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Publication number: 20090202087Abstract: To provide a wireless microphone device that enables a circuit board, which is to be provided with an oscillation circuit, to be decreased in size without deteriorating radiation characteristics. The wireless microphone device is configured to include: a circuit board 5 that is sectioned into circuit areas 11a and 11b and makes the respective circuit areas function as antenna elements of a dipole antenna; an oscillation circuit 21 that is arranged in the circuit area 11b and generates a high frequency signal on the basis of a voice signal from a microphone 2a; a feeding path for feeding the high frequency signal to an electrically conductive layer 11 in the circuit area 11b through a feeding point positioned on the circuit area 11a side distant from the oscillation circuit 21; and a high frequency shield covering at least a part of the feeding path.Type: ApplicationFiled: September 10, 2007Publication date: August 13, 2009Applicant: TOA CorporationInventors: Mitsuru Nakashima, Koji Moriguchi
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Publication number: 20070154812Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/?m and not more than 1500/?m, and with d002 being preferably not larger than 3.3650 ?, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.Type: ApplicationFiled: March 14, 2007Publication date: July 5, 2007Applicant: SONY CORPORATIONInventors: Koji Moriguchi, Mitsuhara Yonemura, Kazuhito Kamei, Masaru Abe, Hideya Kaminaka, Noriyuki Negi, Atsuo Omaru, Masayuki Nagamine
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Patent number: 7214447Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/?m and not more than 1500/?m, and with d002 being preferably not larger than 3.3650 ?, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.Type: GrantFiled: April 16, 2004Date of Patent: May 8, 2007Assignee: Sony CorporationInventors: Koji Moriguchi, Mitsuhara Yonemura, Kazuhito Kamei, Masaru Abe, Hideya Kaminaka, Noriyuki Negi, Atsuo Omaru, Masayuki Nagamine
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Publication number: 20060134523Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/?m and not more than 1500/?m, and with d002 being preferably not larger than 3.3650 ?, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.Type: ApplicationFiled: April 16, 2004Publication date: June 22, 2006Inventors: Koji Moriguchi, Mitsuharu Yonemura, Kazuhito Kamei, Masaru Abe, Hideya Kaminaka, Noriyuki Negi, Atsuo Omaru, Masayuki Nagamine
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Patent number: 6784537Abstract: A semiconductor device of a surface-mounting type has a mount surface and includes a semiconductor chip having a first surface, a second surface, a heat-generating portion located nearer to the second surface than the first surface and that generates heat during operation, and at least one patterned electrode formed on the second surface. A resin covers the semiconductor chip and an electrode terminal is extracted from the first surface of the semiconductor chip. A mounting face of the electrode terminal and a surface of the at least one patterned electrode are exposed to be substantially flush with a plane of the mount surface, and a perimeter of the at least one patterned electrode is surrounded by the resin.Type: GrantFiled: September 10, 2002Date of Patent: August 31, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Koji Moriguchi
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Patent number: 6768188Abstract: There is provided a semiconductor device in a package structure that can improve reliability. The semiconductor device comprises a semiconductor chip having an upper electrode and a lower electrode formed thereon; a package base bonded to the lower electrode on the semiconductor chip; and a metallic strap having first and second ends bonded through solders to the upper electrode on the semiconductor chip and a package lead. The first end of the metallic strap is bonded to the upper electrode in such a manner that a gap therebetween gradually becomes wider in a portion close to the semiconductor chip's edge toward said second end of said metallic strap.Type: GrantFiled: June 19, 2003Date of Patent: July 27, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Koji Moriguchi
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Patent number: 6764767Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/&mgr;m and not more than 1500/&mgr;m, and with d002 being preferably not larger than 3.3650 Å, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.Type: GrantFiled: April 16, 1999Date of Patent: July 20, 2004Assignee: Sony CorporationInventors: Koji Moriguchi, Mitsuhara Yonemura, Kazuhito Kamei, Masaru Abe, Hideya Kaminaka, Noriyuki Negi, Atsuo Omaru, Masayuki Nagamine
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Publication number: 20040056362Abstract: There is provided a semiconductor device in a package structure that can improve reliability. The semiconductor device comprises a semiconductor chip having an upper electrode and a lower electrode formed thereon; a package base bonded to the lower electrode on the semiconductor chip; and a metallic strap having first and second ends bonded through solders to the upper electrode on the semiconductor chip and a package lead. The first end of the metallic strap is bonded to the upper electrode in such a manner that a gap therebetween gradually becomes wider in a portion close to the semiconductor chip's edge toward said second end of said metallic strap.Type: ApplicationFiled: June 19, 2003Publication date: March 25, 2004Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Koji Moriguchi
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Patent number: 6576369Abstract: A graphite powder has surface closed-end structures in which the graphite c-plane layers of the graphite layer crystal lattices have closed-ends on the surface of the graphite powder by linking the ends of one or more pairs of the c-plane layers, leaving interstices which are open on the surface of the graphite. The number of open interstices is at least 100 and at most 1500 per micrometer in a c-axis direction of the graphite. Preferably, the graphite powder has a specific surface area of 1.0 m2/g or less. Such a graphite powder can be prepared either by graphitizing a carbon material, which has been pulverized at a high speed under well-controlled conditions before and/or after the carbonization, or by subjecting a carbon material, which has been pulverized under well-controlled conditions before and/or after the carbonization, to graphitization and then to oxidative heat treatment at a temperature of 600-800° C. and finally to heat treatment at a temperature of 800° C. or higher in an inert gas.Type: GrantFiled: August 24, 1998Date of Patent: June 10, 2003Assignees: Sumitomo Metal Industries, Ltd., Sony CorporationInventors: Koji Moriguchi, Mitsuharu Yonemura, Kazuhito Kamei, Noriyuki Negi, Masaru Abe, Hideya Kaminaka
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Publication number: 20030052405Abstract: A semiconductor device of a surface-mounting type having a mount surface to be joined with a mounting substrate includes a lead frame (4), semiconductor chip (2), and a resin (12) covering said the semiconductor chip. A mounting surface of an electrode terminal extracted from the semiconductor chip via the lead frame and surfaces of electrodes (20A, 20B) formed in the semiconductor chip are exposed to the mount surface to be substantially flush with the plane of the mount surface.Type: ApplicationFiled: September 10, 2002Publication date: March 20, 2003Applicant: Kabushiki Kaisha ToshibaInventor: Koji Moriguchi
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Publication number: 20010051300Abstract: A graphite powder suitable for a negative electrode material of a lithium ion secondary battery which assures a high discharging capacity not lower than 320 mAh/g is to be manufactured at a lower cost. Specifically, a graphite powder containing 0.01 to 5.0 wt % of boron and having a looped closure structure at an end of a graphite c-planar layer on the surface of a powder, with the density of the interstitial planar sections between neighboring closure structures being not less than 100/&mgr;m and not more than 1500/&mgr;m, and with d002 being preferably not larger than 3.3650 Å, is manufactured by (1) heat-treating a carbon material pulverized at an elevated speed before or after carbonization for graphization at temperature exceeding 1500° C. or by (2) heat-treating the carbon material pulverized before or after carbonization at a temperature exceeding 1500° C.Type: ApplicationFiled: April 16, 1999Publication date: December 13, 2001Inventors: KOJI MORIGUCHI, MITSUHARA YONEMURA, KAZUHITO KAMEI, MASARU ABE, HIDEYA KAMINAKA, NORIYUKI NEGI, ATSUO OMARU, MASAYUKI NAGAMINE