Patents by Inventor Koji Oda
Koji Oda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170373098Abstract: A thin-film transistor substrate constituting a liquid crystal display includes: a thin-film transistor including, a gate electrode, a gate insulating film covering the gate electrode, a semiconductor layer opposing the gate electrode via the gate insulating film, a channel protective film covering the semiconductor layer, a protective film covering over the channel protective film, source and drain electrodes in contact with the semiconductor layer through first contact holes penetrating through the protective film and the channel protective film; a first electrode electrically connected to the drain electrode; a gate wiring extending from the gate electrode; and a source wiring electrically connected to the source electrode. The source wiring and first electrode are respectively electrically connected to the source electrode and drain electrode through respective second contact holes penetrating through the protective film.Type: ApplicationFiled: January 5, 2016Publication date: December 28, 2017Applicant: Mitsubishi Electric CorporationInventors: Rii HIRANO, Naoki NAKAGAWA, Takaaki MURAKAMI, Kazunori INOUE, Koji ODA
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Publication number: 20170242283Abstract: An array substrate according to the present invention includes a non-linear element. The non-linear element includes a first insulation film disposed so as to cover a light-shielding body, an oxide semiconductor film disposed on the first insulation film so as to overlap the light-shielding body in a plan view, a source electrode and a drain electrode that are disposed so as to be apart from each other with a separation portion therebetween on the oxide semiconductor film, a second insulation film disposed so as to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a first back electrode disposed on a third insulation film and connected to a source wire through a first contact hole. The first back electrode is disposed so as to overlap the source electrode and part of the separation portion on the oxide semiconductor film in a plan view.Type: ApplicationFiled: January 27, 2017Publication date: August 24, 2017Applicant: Mitsubishi Electric CorporationInventor: Koji ODA
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Patent number: 9726946Abstract: A liquid crystal display device includes an electrode configuration layer provided on a support substrate, the electrode configuration layer includes a stripe region having a plurality of electrode regions and a plurality of insulator regions arranged in an alternating manner, and the electrode regions and the insulator regions are formed by partially performing a reduction treatment or an oxidation treatment on a layer made of one material, thereby controlling conductivity. Further, the electrode regions are included in at least one of the pixel electrode and the counter electrode of the liquid crystal display device.Type: GrantFiled: May 25, 2015Date of Patent: August 8, 2017Assignee: Mitsubishi Electric CorporationInventors: Yusuke Yamagata, Manabu Iwakawa, Toshihiro Yamashita, Koji Oda, Kazunori Inoue
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Patent number: 9640557Abstract: A TFT array substrate has an organic insulating film formed of a photosensitive organic resin material. A common electrode and a lead-out wiring are formed on the organic insulating film, and a pixel electrode is formed above the common electrode with an interlayer insulating film provided between them. The pixel electrode is connected to the lead-out wiring through a contact hole formed in the interlayer insulating film. The lead-out wiring and the common electrode are connected to a drain electrode and a common wiring, respectively, through contact holes formed in the organic insulating film. A metal cap film is provided on each of the lead-out wiring and the common electrode in the contact holes formed in the organic insulating film.Type: GrantFiled: March 21, 2014Date of Patent: May 2, 2017Assignee: Mitsubishi Electric CorporationInventors: Koji Oda, Kazunori Inoue, Nobuaki Ishiga, Osamu Miyakawa
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Publication number: 20170052402Abstract: A liquid crystal display device includes an electrode configuration layer provided on a support substrate, the electrode configuration layer includes a stripe region having a plurality of electrode regions and a plurality of insulator regions arranged in an alternating manner, and the electrode regions and the insulator regions are formed by partially performing a reduction treatment or an oxidation treatment on a layer made of one material, thereby controlling conductivity. Further, the electrode regions are included in at least one of the pixel electrode and the counter electrode of the liquid crystal display device.Type: ApplicationFiled: May 25, 2015Publication date: February 23, 2017Applicant: Mitsubishi Electric CorporationInventors: Yusuke YAMAGATA, Manabu IWAKAWA, Toshihiro YAMASHITA, Koji ODA, Kazunori INOUE
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Patent number: 9543329Abstract: A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.Type: GrantFiled: June 30, 2015Date of Patent: January 10, 2017Assignee: Mitsubishi Electric CorporationInventors: Kazunori Inoue, Koji Oda, Naoki Tsumura
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Publication number: 20160372501Abstract: A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.Type: ApplicationFiled: September 1, 2016Publication date: December 22, 2016Applicant: Mitsubishi Electric CorporationInventors: Kazunori INOUE, Koji ODA, Naoki TSUMURA
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Publication number: 20160005770Abstract: A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.Type: ApplicationFiled: June 30, 2015Publication date: January 7, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kazunori INOUE, Koji ODA, Naoki TSUMURA
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Patent number: 8905591Abstract: A linear light source includes an LED, an LED drive circuit substrate disposed on a frame, a flexible substrate on which an electric supply pattern is formed and to which the LED is attached at one end and the LED drive circuit is attached at the other end, a linear light guide and a heat sink. The one end of the flexible substrate is attached to the heat sink. A face of the heat sink covered by the LED and a face of the one end of the flexible substrate are perpendicular to the light guide and to a substrate face of the LED drive circuit substrate, while a face of the other end of the flexible substrate is parallel to the light guide and a substrate face of the LED drive circuit substrate. A bent portion is formed between the two ends of the flexible substrate.Type: GrantFiled: August 23, 2012Date of Patent: December 9, 2014Assignee: Ushio Denki Kabushiki KaishaInventors: Masashi Okamoto, Koji Oda, Shinichiro Kanaoka, Motonori Tada, Koichi Kamei
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Publication number: 20140299881Abstract: A TFT array substrate has an organic insulating film formed of a photosensitive organic resin material. A common electrode and a lead-out wiring are formed on the organic insulating film, and a pixel electrode is formed above the common electrode with an interlayer insulating film provided between them. The pixel electrode is connected to the lead-out wiring through a contact hole formed in the interlayer insulating film. The lead-out wiring and the common electrode are connected to a drain electrode and a common wiring, respectively, through contact holes formed in the organic insulating film. A metal cap film is provided on each of the lead-out wiring and the common electrode in the contact holes formed in the organic insulating film.Type: ApplicationFiled: March 21, 2014Publication date: October 9, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Koji ODA, Kazunori INOUE, Nobuaki ISHIGA, Osamu MIYAKAWA
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Patent number: 8610026Abstract: The method of lap-welding of metal plates using a laser beam, wherein at least one of the metal plates is surface-treated, includes putting a metal plate on the other metal plate and forming a gap between the metal plates so that gas generated at the treated surface at the time weld can be dissipated therethrough. A surface-treated first work and a surface-treated second work are placed one on the other and clamped by a clamp with an opening of the clamp centered at the location on the first work to be welded. Then a laser beam is directed to the location to form a weld. The beam is then directed near the inner periphery of the opening to form a heated portion so that the heated portion deflects to form a gap through which the gas generated at the treated surface dissipates thereby reducing gas pressure.Type: GrantFiled: December 2, 2009Date of Patent: December 17, 2013Assignee: Honda Motor Co., Ltd.Inventors: Haruhiko Kobayashi, Satoshi Ohkubo, Shinichi Miyasaka, Koji Oda, Naoki Takahashi, Hideari Kamachi
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Patent number: 8487309Abstract: An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.Type: GrantFiled: January 20, 2011Date of Patent: July 16, 2013Assignee: Mitsubishi Electric CorporationInventors: Koji Oda, Tomoyuki Irizumi, Naoki Nakagawa, Takeshi Ono
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Patent number: 8405091Abstract: A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.Type: GrantFiled: February 4, 2008Date of Patent: March 26, 2013Assignee: Mitsubishi Electric CorporationInventors: Takumi Nakahata, Kazunori Inoue, Koji Oda, Naoki Nakagawa, Nobuaki Ishiga
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Publication number: 20130051027Abstract: A linear light source includes an LED, an LED drive circuit substrate disposed on a frame, a flexible substrate on which an electric supply pattern is formed and to which the LED is attached at one end and the LED drive circuit is attached at the other end, a linear light guide and a heat sink. The one end of the flexible substrate is attached to the heat sink. A face of the heat sink covered by the LED and a face of the one end of the flexible substrate are perpendicular to the light guide and to a substrate face of the LED drive circuit substrate, while a face of the other end of the flexible substrate is parallel to the light guide and a substrate face of the LED drive circuit substrate. A bent portion is formed between the two ends of the flexible substrate.Type: ApplicationFiled: August 23, 2012Publication date: February 28, 2013Applicant: USHIO DENKI KABUSHIKI KAISHAInventors: Masashi Okamoto, Koji Oda, Shinichiro Kanaoka, Motonori Tada, Koichi Kamei
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Patent number: 8269908Abstract: A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.Type: GrantFiled: December 16, 2008Date of Patent: September 18, 2012Assignee: Mitsubishi Electric CorporationInventors: Koji Oda, Naoki Nakagawa, Takeshi Ono, Yusuke Uchida
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Publication number: 20110278266Abstract: The method of lap-welding of metal plates using a laser beam, wherein at least one of the metal plates is surface-treated, includes putting a metal plate on the other metal plate and forming a gap between the metal plates so that gas generated at the treated surface at the time weld can be dissipated therethrough. A surface-treated first work and a surface-treated second work are placed one on the other and clamped by means of a clamp with an opening of the clamp centered at the location on the first work to be welded. Then a laser beam is directed to the location to form a weld. The beam is then directed near the inner periphery of the opening to form a heated portion so that the heated portion deflects to form a gap through which the gas generated at the treated surface dissipates thereby reducing gas pressure.Type: ApplicationFiled: December 2, 2009Publication date: November 17, 2011Applicant: Honda Motor Co., Ltd.Inventors: Haruhiko Kobayashi, Satoshi Ohkubo, Shinichi Miyasaka, Koji Oda, Naoki Takahashi, Hideari Kamachi
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Publication number: 20110198606Abstract: An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.Type: ApplicationFiled: January 20, 2011Publication date: August 18, 2011Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Koji Oda, Tomoyuki Irizumi, Naoki Nakagawa, Takeshi Ono
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Publication number: 20100133541Abstract: In accordance with an exemplary aspect of the present invention, a thin film transistor array substrate includes a transparent insulating substrate, and a thin film transistor for pixel switching and a thin film transistor for a drive circuit formed on the transparent insulating substrate, wherein the thin film transistor for a drive circuit includes an amorphous silicon film formed on the transparent insulating film, a microcrystalline silicon film formed on the amorphous silicon film, a first source electrode and a first drain electrode formed on the microcrystalline silicon film, the first source electrode and the first drain electrode being opposed with a first channel area interposed therebetween, a protective insulating film that covers the first source electrode and the first drain electrode, and an upper gate electrode formed so as to be opposed to the first channel area with the protective insulating film interposed therebetween.Type: ApplicationFiled: December 1, 2009Publication date: June 3, 2010Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Yusuke UCHIDA, Koji ODA, Naoki NAKAGAWA
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Publication number: 20100078816Abstract: A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.Type: ApplicationFiled: February 4, 2008Publication date: April 1, 2010Applicant: Mitsubishi Electric CorporationInventors: Takumi Nakahata, Kazunori Inoue, Koji Oda, Naoki Nakagawa, Nobuaki Ishiga
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Publication number: 20090159884Abstract: A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.Type: ApplicationFiled: December 16, 2008Publication date: June 25, 2009Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Koji ODA, Naoki Nakagawa, Takeshi Ono, Yusuke Uchida