Abstract: A semiconductor device includes: an emitter electrode being a metal electrode disposed on a semiconductor substrate; a first passivation film made of a material other than an organic resin, and covering a portion of the emitter electrode; and a second passivation film made of the organic resin, and covering a portion of the emitter electrode via the first passivation film. A copper electrode connected to a portion of the emitter electrode not covered with the first passivation film and including copper as a major component is disposed over the emitter electrode. The second passivation film and the copper electrode are spaced apart.

Abstract: Provided are: a fine cellulose fiber that is superior in handling properties and that can suitably be used as a reinforcing material or the like for resin; a production method of the fine cellulose fiber; and a slurry and a composite comprising the fine cellulose fibers. The present invention pertains to fine cellulose fibers comprising a carbamate group. The degree of substitution with the carbamate group with respect to hydroxy groups in the fine cellulose fibers is preferably no less than 0.05 and no greater than 0.5. The present invention pertains to a slurry comprising the fine cellulose fibers, to a composite comprising the fine cellulose fibers and a resin, and to a production method of the fine cellulose fibers, comprising performing a heat treatment on a mixture of a plant raw material and urea or the like, and performing a miniaturization treatment of the plant raw material.

Abstract: A semiconductor device according to the present disclosure includes a P layer, an insulating film, an electrode, a plurality of P- layers arranged on a side of a termination region of the P layer, an N- layer, an N++ layer, an insulating film, an electrode, a high permittivity layer disposed at least on the P- layers, and a low permittivity layer disposed on the high permittivity layer, and a distance between an end on a side of an active region of the insulating film and an end on a side of the termination region of one of the P- layers located farthest from the active region is more than µm and µm or less, and a distance between the end on the side of the active region of the insulating film and an end on a side of the active region of the electrode is 50 µm or more.

Abstract: A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.

Abstract: According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal layer provided above the semiconductor substrate, a second metal layer provided above the first metal layer and containing Ni as a material and a third metal layer provided above the second metal layer and containing Cu or Ni as a material, wherein the second metal layer has a Vickers hardness of 400 Hv or more and is harder than the third metal layer, and the third metal layer is harder than the first metal layer.

Abstract: One aspect of the present invention is: a dental glass ionomer cement including a first agent containing an ionomer glass powder; and a second agent containing a polycarboxylic acid polymer and water, wherein the first agent further contains a water-soluble compound represented by general formula (1): where R1 is a hydrogen atom or a methyl group, X1 is —O— or —NH—, and L1 is an alkylene group, and a water-soluble compound represented by general formula (2): where R2 is a hydrogen atom or a methyl group, X2 is —O— or —NH—, L2 is an alkyleneoxy group, R3 is an n-valent organic group, m is an integer of 1 or more and 42 or less, and n is an integer of 2 or more and 6 or less.

Abstract: There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

Abstract: The conversion adapter is provided that includes a radio communication unit that receives biological information based on the digital data transmitted from an external biological sensor by using radio communication; an information processing unit that performs data processing of the biological information based on the digital data; a converter that converts the biological information based on the digital data processed by the information processing unit to biological information based on analog data; and a connection unit that is connectable through wire to an external biological information monitor and that outputs the biological information based on the analog data converted by the converter.

Abstract: A conversion adapter is provided that includes a radio communication unit that receives biological information based on digital data transmitted from an external biological sensor by radio communication; a converter that converts the biological information based on the digital data received by the radio communication unit to biological information based on analog data; a connection unit that is connectable through wire to an external biological information monitor and that outputs the biological information based on the analog data converted by the converter; a power supply unit that supplies power to the radio communication unit and the converter; an operation input that receives operation performed by a user; and a body part provided with the connection unit and the operation part.

Abstract: A semiconductor device includes: a semiconductor substrate including a front surface, a back surface that is opposite to the front surface, and a drift layer of a first conductive type disposed between the front surface and the back surface; a first diffusion layer of a second conductive type provided between the drift layer and the front surface; a second diffusion layer provided between the drift layer and the back surface; a first buffer layer of the first conductive type provided between the drift layer and the second diffusion layer, having a concentration higher than that of the drift layer, and into which a proton is injected; and a second buffer layer of the first conductive type provided between the first buffer layer and the second diffusion layer and having a concentration higher than that of the drift layer, wherein a peak concentration of the second buffer layer is higher than a peak concentration of the first buffer layer, an impurity concentration of the first buffer layer gradually decreases t

Abstract: An inference device includes a first acquisition unit that acquires first input information, a storage unit that stores a knowledge graph, an inference execution unit that executes the inference based on the knowledge graph, an output unit that outputs information, a second acquisition unit that acquires second input information indicating a user's intention in regard to the result of the inference and including a first word, and a control unit that judges whether the result of the inference is appropriate or not based on the information based on the result of the inference and the second input information, and when the result of the inference is inappropriate, determines a node of the first word among the plurality of nodes, adds an AND node to the knowledge graph, and associates an inference start node and the node of the first word with each other via the AND node.

Abstract: An inference device includes a knowledge base unit that stores a knowledge base for inferring answers to requests; an information acquisition unit that acquires situation information that is information including a user request or a request from a user and response information including a user's response to an inference result or a result of inference; an inference unit that uses the knowledge base to make inferences for a user request included in the situation information; an information output unit that outputs an inference result; a feedback information extraction unit that specifies a desired result or a result desired by the user for the user request from the response information; and an update unit that updates the knowledge base such that the desired result more likely matches the inference result.

Abstract: A cancer test device (1) is provided with: an application unit (40) for applying a staining agent (45), which can selectively stain a product of a cancer-relating gene in a living cell a chromatic color, onto a group of living cells; an imaging unit (10) for imaging the group of living cells having the staining agent (45) applied thereto; and a determination unit (52) for determining the level of malignancy of cancerization of the group of living cells on the basis of the state of the stained expression pattern of the cancer-relating gene in the group of living cells in an image obtained by the aforementioned imaging.

Abstract: A cancer test device (1) is provided with: an application unit (40) for applying a staining agent (45), which can selectively stain a product of a cancer-relating gene in a living cell a chromatic color, onto a group of living cells; an imaging unit (10) for imaging the group of living cells having the staining agent (45) applied thereto; and a determination unit (52) for determining the level of malignancy of cancerization of the group of living cells on the basis of the state of the stained expression pattern of the cancer-relating gene in the group of living cells in an image obtained by the aforementioned imaging.

Abstract: A semiconductor device includes an N-type drift layer provided between a first main surface and a second main surface of the semiconductor substrate and an N-type buffer layer provided between the N-type drift layer and the first main surface and having a higher impurity peak concentration than the N-type drift layer. The N-type buffer layer has a structure that a first buffer layer, a second buffer layer, a third buffer layer, and a fourth buffer layer are disposed in this order from a side of the first main surface. When a distance from an impurity peak position of the first buffer layer to an impurity peak position of the second buffer layer is L12 and a distance from an impurity peak position of the second buffer layer to an impurity peak position of the third buffer layer is L23, a relationship of L23/L12?3.5 is satisfied.

Abstract: A catheter assembly is provided that includes a puncture tool and a catheter. The puncture tool includes a hollow puncture needle configured to puncture a blood vessel, a detection portion that protrudes forward from a tip of the puncture needle and detects pulsation of the blood vessel, and a determination portion that determines whether the blood vessel is a vein or an artery based on the pulsation of the blood vessel detected by the detection portion. The detection portion includes a probe provided inside the hollow puncture needle that is configured to advance and retreat in an axial direction, and a sensor that detects pulsation of a blood vessel transmitted via the probe.

Abstract: An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cm?3 or higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.

Abstract: Provided is a method for detecting a lesion characterized by administering to an organ a cell staining agent that enables observation of biological tissue by laser irradiation, and then irradiating the organ with multiphoton laser or confocal laser to image the inside of lesion in the organ, and determining the interface between normal site and lesion site.

Abstract: A semiconductor device includes: a semiconductor substrate including a front surface, a back surface that is opposite to the front surface, and a drift layer of a first conductive type disposed between the front surface and the back surface; a first diffusion layer of a second conductive type provided between the drift layer and the front surface; a second diffusion layer provided between the drift layer and the back surface; a first buffer layer of the first conductive type provided between the drift layer and the second diffusion layer, having a concentration higher than that of the drift layer, and into which a proton is injected; and a second buffer layer of the first conductive type provided between the first buffer layer and the second diffusion layer and having a concentration higher than that of the drift layer, wherein a peak concentration of the second buffer layer is higher than a peak concentration of the first buffer layer, an impurity concentration of the first buffer layer gradually decreases t