Abstract: A data transmission system for transmitting an encoded stream via a network, has a video transmission unit having a stream coding unit for generating an encoded stream which is packetized in units of abandonable data, and in which a header including a packet identifier also serving as packet priority is added to each packet, and a stream shaping processing unit for determining transmission or abandonment of each packet in the encoded stream generated by the stream coding unit using the packet identifier included in the header of each packet in accordance with the designated bit rate.

Abstract: A method for producing a substrate of a reflection type liquid crystal display device is provided. The method includes the steps of: forming the input portion for inputting a signal from outside and the connecting electrode on the substrate on which the reflective electrode is formed; forming a protective film on the connecting electrode; forming an interlayer insulator under the condition that the protective film on the connecting electrode is exposed; patterning the interlayer insulator; forming a reflective electrode film on the interlayer insulator; patterning the reflective electrode film to form the reflective electrode; and removing the protective film on the connecting electrode to expose the connecting electrode.

Abstract: A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members (1a, 1b) is smaller than a value obtained by subtracting an alignment error .alpha. of the laser light (4) from a spot diameter D of the laser light (4), i.e., the value (D-.alpha.). The fuse members (1a, 1b) are spaced a distance l larger than a value obtained by adding the alignment error .alpha. to the half of the spot diameter D, i.e., the value (D/2+.alpha.).

Abstract: The contact tester of the present invention includes: a holding mechanism for holding a disk and rotating integrally with the disk, an arm driving for driving an arm which supports a slider, the slider is provided with a head for recording/reproducing information on/from the disk. In addition, a first vibration detection element for detecting contact between the slider and the disk is provided. Furthermore, a signal transmission for transmitting an output signal of the first vibration detection element and a signal analysis for analyzing the output signal transmitted via the signal transmission are provided, where the first vibration detection element is mounted at a position where a vibration of the arm is not detected.

Abstract: A reflector including a substrate and a thin metal film is provided. The substrate defines a plurality of randomly arranged, curved, surface deformity portions, each having an asymmetric cross section. Typically, the surface deformity/substrate structure is formed by creating curved pieces of resist material on a substrate, and thereafter, tilting and heating the substrate. Alternatively, a photoresist process utilizing an ion, or an electron beam without heating, can be used. The metal film is coated onto the surface of the substrate and onto the curved, surface deformities located thereon, such that light incident from a given direction is reflected over a wide range, but most intensely in particular directions. Further, a liquid crystal display is provided in which the reflector just mentioned is used as a lower substrate. An upper glass substrate is provided, and a liquid crystal display medium is interposed between the reflector and the upper glass substrate.

Abstract: The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

Abstract: The present invention provides a process for manufacturing a reflection-type liquid crystal display apparatus. The method includes the steps of: forming scanning lines, signal lines, a thin film transistor and a connector electrode on a substrate; forming a photosensitive resin film covering at least the connector electrode, and forming a reflection electrode film on the photosensitive resin film and other portions; removing a portion of the reflection electrode film located at least on the connector electrode, and patterning the reflection electrode film so that the pixel electrode resides in the display region; and removing a portion of the photosensitive resin film located on the connector electrode to reveal the connector electrode.

Abstract: A reflection type liquid crystal display apparatus includes: a first substrate having a plurality of reflecting electrodes; a second substrate having a light transmitting electrode; and a liquid crystal layer disposed between the first substrate and the second substrate. The first substrate includes an insulating substrate, a switching device provided on the insulating substrate for supplying a display voltage signal to the reflecting electrode, a drawing-out electrode connected to the switching device and extending under the reflecting electrode, and an insulating resin layer having a contact hole on the drawing-out electrode. The reflecting electrode is provided on the insulating resin layer, corresponding to each pixel, so as to cover the contact hole, and is electrically connected to the drawing-out electrode at the bottom of the contact hole.

Abstract: The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

Abstract: A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof.

Abstract: A reflective substrate is provided, in which an electrode made of a material having an optical reflecting function is provided above an insulating base substrate and an upper surface of the electrode has a continuous wave shape without any flat portions. A method for manufacturing the reflective substrate includes the steps of: forming a plurality of convex portions with two or more different heights in a region where the electrode is provided; forming a polymer resin film, which has an upper surface in a continuous wave shape without any flat portions, on the substrate with the convex portions; and forming the electrode made of a material having an optical reflecting function on the polymer resin film so that the electrode has a continuous wave shape.

Abstract: A thin film EL device having a double-insulated structure and comprising an emitting layer made of an alkaline-earth sulfide as its host material and doped with Eu.sup.2+ for providing luminescent centers. The emitting layer has a Eu concentration of 0.15 to 0.75 atm. % and a controlled thickness of at least 1.3 .mu.m to impart hysteresis to the brightness vs. applied voltage characteristics of the device.

Abstract: The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200.degree. C. to 700.degree. C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.

Abstract: A thin film light emitting element including a light emitting layer and first and second dielectric layers which interpose opposite faces of the light emitting layer. The light emitting layer is made of a compound semiconductor material and an activator material such that the compound semiconductor material and the activator material are set at a composition substantially equal to a stoichiometric composition.