Abstract: A method for manufacturing a photomask includes obtaining a substrate on which a halftone film, a light-shielding film, and a resist film are stacked, irradiating a first region of the resist film at a first dose and a second region of the resist film that surrounds the first region at a second dose greater than the first dose, developing the resist film in the first region to form a mask pattern while leaving the resist film in the second region to form a mask frame pattern, and then patterning the light-shielding film using the mask pattern formed in the resist film.

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Abstract: A reflection-type exposure mask includes a light reflector provided in a pattern on a substrate. The light reflector has a multilayer structure including first-type layers and second-type layers that are alternately stacked. The second-type layers have a refractive index higher at an extreme ultraviolet wavelength than a refractive index of the first-type layer at the extreme ultraviolet wavelength. A light transmitting medium is on a side surface of the light reflector.

Abstract: A substrate processing apparatus of an embodiment includes a nozzle plate and a support configured to support a substrate at a predetermined distance from the nozzle plate with a first surface of the substrate facing the nozzle plate. A processing liquid supply unit is configured to supply a processing liquid to a second surface of the substrate that is opposite to the first surface. A first supply unit is configured to supply a first fluid from a first supply port in the nozzle plate. A second supply unit is configured to supply a second fluid from a second supply port closer to a outer edge of the nozzle plate than the first supply port.

Abstract: According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.

Abstract: According to one embodiment, a substrate processing method includes supplying a liquid on a first face of a substrate, forming a solidified layer in which at least part of the liquid has been solidified by cooling the substrate down to be equal to or lower than a solidification point of the liquid, and melting the solidified layer. Forming the solidified layer, includes controlling a cooling parameter by monitoring an optical characteristic or acoustic wave characteristic of the solidified layer.

Abstract: According to one embodiment, a processing apparatus for processing substrates having different base shapes includes a stage comprising a first portion having a substrate facing surface and an opening extending therethough connected to a source of a cooling fluid, and a second portion located outwardly of the first portion, a substrate support, having a substrate support surface thereon, extending over the second portion, a process fluid outlet overlying the first portion, and a driving unit coupled to one of the stage and the first portion, wherein the driving unit is configured to move at least one of the substrate support surface and the substrate facing surface such that the relative locations of the substrate support surface and the substrate facing surface of the stage are changeable based on the shape of a substrate to be processed in the apparatus.

Abstract: An exposure mask includes a substrate, and a plurality of first films and a plurality of second films located alternately over each other over selected portions of the substrate. The exposure mask further includes a third film selectively located over the first and second films. At least one first pattern is located over the substrate and does not include any of the first, second or third films. At least one second pattern is located over the substrate and includes the first and second films and does not include the third film. At least one third pattern is located over the substrate and includes the first, second and third films.

Abstract: A reflection-type exposure mask includes a light reflector provided in a pattern on a substrate. The light reflector has a multilayer structure including first-type layers and second-type layers that are alternately stacked. The second-type layers have a refractive index higher at an extreme ultraviolet wavelength than a refractive index of the first-type layer at the extreme ultraviolet wavelength. A light transmitting medium is on a side surface of the light reflector.

Abstract: An EUV mask according to an embodiment includes a substrate, a first line-shaped portion provided on the substrate, a second line-shaped portion provided on the substrate, a first sidewall disposed on a side surface of the first line-shaped portion, and a second sidewall disposed on a side surface of the second line-shaped portion. A first layer and a second layer are stacked in the first and second line-shaped portions. The first layer includes a first material. The second layer includes a second material. The first and second sidewalls include an oxide of the first material and cover a side surface of the first layer and a side surface of the second layer.

Abstract: A lithography mask production method includes (a) forming, in a reflection layer of a blank substrate, a reference pattern used as a reference in reflectivity measurement and a reflection pattern used for lithography; (b) measuring a reflectivity Rref of the reflection layer at the reference pattern and a reflectivity RLS of the reflection layer at the reflection pattern; and (c) determining an effective width of the reflection layer at the reflection pattern based on the reflectivity Rref and the reflectivity RLS.

Abstract: One embodiment of the present invention provides a light reflection type lithography mask including: a substrate; and a reflection layer. The reflection layer is formed on the substrate, and has a first pattern and a second pattern as viewed from above. The second pattern is located so as to be closest to one of one side and the other side of the first pattern in a first direction. A reflectivity at a portion corresponding to the first pattern is different from a reflectivity at a portion corresponding to the second pattern.

Abstract: According to one embodiment, a photomask manufacturing method for patterning a multilayer film into a mask pattern in the multilayer film is provided. The photomask manufacturing method includes preparing a substrate including the multilayer film provided on the substrate, obtaining an amount of position variation before and after the multilayer film is patterned if a position of the mask pattern is deviated before and after patterning the multilayer film, forming the mask pattern at a position deviated by the amount of the position variation from a target position, if the multilayer film is patterned and a pattern of the multilayer film is formed at the target position, and patterning the multilayer film with the mask pattern.

Abstract: A lithography mask production method includes (a) forming, in a reflection layer of a blank substrate, a reference pattern used as a reference in reflectivity measurement and a reflection pattern used for lithography; (b) measuring a reflectivity Rref of the reflection layer at the reference pattern and a reflectivity RLS of the reflection layer at the reflection pattern; and (c) determining an effective width of the reflection layer at the reflection pattern based on the reflectivity Rref and the reflectivity RLS.

Abstract: A defect inspection method according to an embodiment includes irradiating an EUV mask having a substrate, a first line-shaped portion, and a second line-shaped portion with deep ultraviolet radiation from a lower surface side of the substrate, and detecting reflection light of the deep ultraviolet radiation. The first line-shaped portion and the second line-shaped portion are provided on the substrate. The second line-shaped portion is spaced from the first line-shaped portion. The first line-shaped portion and the second line-shaped portion include a first layer containing the first material and a second layer containing the second material. The first layer and the second layer are stacked in the first line-shaped portion and the second line-shaped portion.

Abstract: An EUV mask according to an embodiment includes a substrate, a first line-shaped portion provided on the substrate, a second line-shaped portion provided on the substrate, a first sidewall disposed on a side surface of the first line-shaped portion, and a second sidewall disposed on a side surface of the second line-shaped portion. A first layer and a second layer are stacked in the first and second line-shaped portions. The first layer includes a first material. The second layer includes a second material. The first and second sidewalls include an oxide of the first material and cover a side surface of the first layer and a side surface of the second layer.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: One embodiment of the present invention provides a light reflection type lithography mask including: a substrate; and a reflection layer. The reflection layer is formed on the substrate, and has a first pattern and a second pattern as viewed from above. The second pattern is located so as to be closest to one of one side and the other side of the first pattern in a first direction. A reflectivity at a portion corresponding to the first pattern is different from a reflectivity at a portion corresponding to the second pattern.

Abstract: According to an embodiment, a reflective photomask includes a substrate, a first layer on the substrate and a second layer on the first layer. The first layer is capable of receiving a first light, and emitting electrons. The second layer has an opening of a predetermined pattern, and is capable of reflecting a second light.

Abstract: According to one embodiment, a light-reflective photomask including a circuit pattern area, and an outside area positioned outside the circuit pattern area includes a substrate, a low-reflectivity layer provided in both the circuit pattern area, and the outside area, formed on the substrate, including at least a conductive layer, and comprising a first reflectivity for deep ultraviolet light, a multilayer reflection layer provided in the circuit pattern area, and formed on the low-reflectivity layer, and a light-absorber provided in the circuit pattern area, formed on the multilayer reflection layer, including a circuit pattern, and comprising a second reflectivity for deep ultraviolet light. The first reflectivity is lower than or equal to the second reflectivity.