Abstract: According to one embodiment, a photomask manufacturing method for patterning a multilayer film into a mask pattern in the multilayer film is provided. The photomask manufacturing method includes preparing a substrate including the multilayer film provided on the substrate, obtaining an amount of position variation before and after the multilayer film is patterned if a position of the mask pattern is deviated before and after patterning the multilayer film, forming the mask pattern at a position deviated by the amount of the position variation from a target position, if the multilayer film is patterned and a pattern of the multilayer film is formed at the target position, and patterning the multilayer film with the mask pattern.

Abstract: According to one embodiment, a light-reflective photomask including a circuit pattern area, and an outside area positioned outside the circuit pattern area includes a substrate, a low-reflectivity layer provided in both the circuit pattern area, and the outside area, formed on the substrate, including at least a conductive layer, and comprising a first reflectivity for deep ultraviolet light, a multilayer reflection layer provided in the circuit pattern area, and formed on the low-reflectivity layer, and a light-absorber provided in the circuit pattern area, formed on the multilayer reflection layer, including a circuit pattern, and comprising a second reflectivity for deep ultraviolet light. The first reflectivity is lower than or equal to the second reflectivity.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract: A light reflecting mask includes a reflecting layer which is provided on a substrate and reflects light, an absorbing layer which is provided on the reflecting layer and absorbs light, a device pattern which is formed in a first region of the absorbing layer, and a reflectance measuring pattern which is formed in a second region of the absorbing layer. The reflectance measuring pattern is a diffraction grating.

Abstract: A light reflecting mask includes a reflecting layer which is provided on a substrate and reflects light, an absorbing layer which is provided on the reflecting layer and absorbs light, a device pattern which is formed in a first region of the absorbing layer, and a reflectance measuring pattern which is formed in a second region of the absorbing layer. The reflectance measuring pattern is a diffraction grating.

Abstract: To provide a reflection-type mask having a reduced shadowing effect, capable of phase shift exposure and having a shading frame of sufficient shading performance. The mask includes a substrate 11, a multilayer reflective film 12 which is formed above the substrate 11, and which reflects exposure light, a first photoabsorber layer 15 which is formed above the multilayer reflective film 12, and which absorbs the exposure light, a circuit pattern region 16 constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer 15 and an absorbing portion where the first photoabsorber layer remains, and a shading region 18 having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region 16.

Abstract: A light reflecting mask includes a reflecting layer which is provided on a substrate and reflects light, an absorbing layer which is provided on the reflecting layer and absorbs light, a device pattern which is formed in a first region of the absorbing layer, and a reflectance measuring pattern which is formed in a second region of the absorbing layer. The reflectance measuring pattern is a diffraction grating.

Abstract: To provide a reflection-type mask having a reduced shadowing effect, capable of phase shift exposure and having a shading frame of sufficient shading performance. The mask includes a substrate 11, a multilayer reflective film 12 which is formed above the substrate 11, and which reflects exposure light, a first photoabsorber layer 15 which is formed above the multilayer reflective film 12, and which absorbs the exposure light, a circuit pattern region 16 constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer 15 and an absorbing portion where the first photoabsorber layer remains, and a shading region 18 having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region 16.

Abstract: Provided is a method of producing a light reflection mask in which flatness of a front surface thereof is less deteriorated by light reflection pattern formation and during electrostatic chucking. Thereby, the light reflection mask contributes to improvement of exposure accuracy in EUV exposure or the like. The method includes the steps of: measuring flatness of the front surface of a substrate that has the front surface on which a reflection mask pattern is formed, and a back surface on which a conductive film for the electrostatic chucking is formed; and selectively removing, on the basis of the measured flatness, the conductive film to form an opening therein, thereby causing the conductive film in the mask to have an open-area-ratio variation that allows the front surface of the substrate to have a desired flatness.