Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) and a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid (R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; W represents —COO—, a —CONH— group or a divalent aromatic hydrocarbon group; Y1 and Y2 represent a divalent linking group or a single bond; R?1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula.

Abstract: An acquisition unit of a user terminal acquires an initiator ID including a user ID and a computer ID. The initiator ID is transmitted by a transmitter unit, and then, received by a transmitter/receiver unit of a storage device. A LUDB stores information determining a LU corresponding to each user ID of several users. A masking unit refers to the LUDB to determine the LU corresponding to the user ID. If the received initiator ID differs from an initiator ID stored in a table corresponding to the determined LU, an access control unit refuses access to the LU by the user terminal.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) including a structural unit (A) represented by general formula (a0-1) and a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid (R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; W represents —COO—, a —CONH— group or a divalent aromatic hydrocarbon group; Y1 and Y2 represent a divalent linking group or a single bond; represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.

Abstract: A resist composition comprising: a base component (A) which exhibits changed solubility in a developing solution under action of acid; an acid-generator component (B) which generates acid upon exposure; and a compound (D1) including of a cation moiety which contains a quaternary nitrogen atom, and an anion moiety represented by formula (d1-an1) or (d1-an2) shown below. In the formulas, X represents a cyclic aliphatic hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms which may have a substituent.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.

Abstract: A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid; an acid generator component (B) which generates acid upon exposure; a fluorine-containing compound component (F); and a photosensitizer (G).

Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety comprising a group represented by general formula (I) (in the formula, R5 represents an organic group having a carbonyl group, an ester bond or a sulfonyl group; and Q represents a divalent linking group).

Abstract: Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Abstract: A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and an acid generator containing compounds represented by general formulas (b1) and (b2) shown below X-Q1-Y1—SO3?A+??(b 1) in which Q1 represents a divalent linking group containing an oxygen atom, Y1 represents an alkylene group of 1-4 carbons which may have a substituent or a fluorinated alkylene group 1-4 carbons which may have a substituent, X represents an alicyclic hydrocarbon group of 3-30 carbons which may have a substituent, and A+ represents an organic cation R1—Y5—SO2?A+??(b 2) in which R1 represents a monovalent chain-like aliphatic hydrocarbon group containing a hetero atom at an arbitrary position, Y5 represents an alkylene group of 1-4 carbons which may have a substituent or a fluorinated alkylene group of 1-4 carbons which may have a substituent, and A+ represents an organic cation.

Abstract: The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.

Abstract: There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: R2—CH2—O—Y1—SO3?A+??(b1-12) wherein R2 represents a monovalent aromatic organic group; Y1 represents an alkylene group of 1 to 4 carbon atoms which may be fluorinated; and A+ represents a cation.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Y0 represents an alkylene group of 1 to 4 carbon atoms which may have a substituent, R0 represents an alkyl group, alkoxy group, halogen atom, halogenated alkyl group, hydroxyl group or oxygen atom (?O), p represents 0 or 1, and Z+ represents an organic cation.

Abstract: A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I): (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; R2 represents a bivalent linking group; and R3 represents a cyclic group containing —SO2— within the ring skeleton. In the formula (I), X represents a cyclic group of 3 to 30 carbon atoms, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms).

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.

Abstract: Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

Abstract: The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.