Abstract: The present disclosure provides a metal wire and a method for manufacturing the same. The method for manufacturing the metal wire includes: forming a metal bar on a substrate; forming a mask above the metal bar, a width of the mask being smaller than a width of the metal bar, and an orthographic projection of the mask on the substrate is within an orthographic projection of the metal bar on the substrate; and wet etching the metal bar to a saturation state under a protection of the mask to form a metal wire, a width of the metal wire being smaller than the width of the mask. The above method can form the metal wire with a high thickness and a narrow line width.

Abstract: A negative electrode sheet and a battery applying the same are provided. The negative electrode sheet includes a current collector and a negative electrode active coating disposed on two opposite surfaces of the current collector. The negative electrode active coating contains a negative electrode active material, and the negative electrode active material includes graphite. The negative electrode sheet satisfies 0.0025??*?/PD?0.0065, where ? is a porosity of the negative electrode sheet, ? is a surface density of a single surface of the negative electrode sheet with a unit of g/cm2, and PD is a compacted density of the negative electrode sheet with a unit of g/cm3. The compacted density PD, the surface density ?, and the electrode sheet porosity ? of the negative electrode sheet form specific correlation relationships among one another.

Abstract: A display substrate and a manufacturing method and a display device are provided. The display substrate includes: a base substrate, a first insulation layer, a first electrode pattern, a connecting electrode pattern, a second electrode, a light-emitting functional layer, and a first filling layer. The second electrode is connected with the connecting electrode pattern, the second electrode and the first electrode pattern are spaced apart from each other. The light-emitting functional layer is located between the first electrode pattern and the second electrode. The first filling layer is located between the connecting electrode pattern and the first electrode pattern. The first filling layer and the light-emitting functional layer are different layers; a portion of the first insulation layer that is located between the first electrode pattern and the connecting electrode pattern has a groove, and the first filling layer is at least partially located in the groove.

Abstract: Wavelength-selective films are visibly apparent under the selective wavelength. Wavelength-selective films typically reflect off axis the selected wavelength and therefore can provide high-contrast against a background when applied in a pattern on a substrate. However, it is difficult to apply unique patterned embedded images from film. Disclosed is a cost-effective method and construction of a patterned wavelength-selective image to a substrate. In the disclosed wavelength-selective image, wavelength-selective film particles are applied to an adhesive pattern to create the wavelength-selective image.

Abstract: Embodiments of this application disclose a data protection method and system, a medium, and an electronic device, and belong to the field of communication technologies. In embodiments of this application, a first electronic device establishes a communication connection to a second electronic device. The first electronic device is a trusted device of the second electronic device. When detecting a first trigger condition, the first electronic device sends first data to the second electronic device. The first data is used to trigger the second electronic device to enter a maintenance mode. According to embodiments of this application, the first electronic device triggers the second electronic device to enter the maintenance mode, to protect data of the electronic devices.

Abstract: A method for determining a productivity of a coalbed methane well without shutting down the well includes steps of: obtaining coalbed methane basic data; based on PVT experimental data, determining a relationship table between a pressure and a coalbed methane deviation factor, and a relationship table between the pressure and a pseudo-pressure; recording daily gas production rates, bottomhole flow pressures, and cumulative gas productions at each stabilized flow pressure test moment in at least three different production stages; determining formation pressures corresponding to each stabilized flow pressure test moment based on a material balance equation; according to the formation pressures, the bottomhole flow pressures and the production rates, determining coefficients in a deliverability equation of the coalbed methane well for determining the deliverability equation; substituting the formation pressures and the bottomhole flow pressures into the deliverability equation for obtaining corresponding product

Abstract: The present disclosure discloses an antenna apparatus and an electronic device, relating to the technical field of antennas. The antenna apparatus includes a circuit board, a first coil, and a light module. The first coil is provided on the circuit board. The light module is annularly provided on the circuit board along a circumferential direction of the first coil. For the antennal apparatus provided in the present disclosure, by providing the first coil on the circuit board, and meanwhile arranging the light module in a ring shape on the circuit board along the circumferential direction of the first coil, the light module and the first coil are respectively electrically connected to a motherboard of the electronic device, so that an operating state of the first coil is displayed by brightness or color of the light module.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure, a conductor layer over and in contact with the layer of dielectric material and above the S/D contact structure, and an interconnect structure over and in contact with the conductor layer.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure, a conductor layer over and in contact with the layer of dielectric material and above the S/D contact structure, and an interconnect structure over and in contact with the conductor layer.

Abstract: The present disclosure includes in one instance an optical article comprising a data rich plurality of retroreflective elements that are configured in a spatially defined arrangement, where the plurality of retroreflective elements comprise retroreflective elements having at least two different retroreflective properties, and where data rich means information that is readily machine interpretable. The present disclosure also includes a system comprising the previously mentioned optical article, an optical system, and an inference engine for interpreting and classifying the plurality of retroreflective elements wherein the optical system feeds data to the inference engine.

Abstract: An abrasive article comprises a porous substrate having openings extending through the porous substrate between first and second opposed major surfaces. An abrasive coating is disposed on only a portion of a first major surface of the porous substrate. The abrasive coating comprises a functional layer disposed on only a portion of a first major surface of the porous substrate, a make layer disposed on at least a portion of the functional layer opposite the porous substrate, and abrasive particles. The functional layer and the make layer independently comprise chemically crosslinked binders. The functional layer fully occludes a first portion the openings and does not fully occlude a second portion of the openings, which permits passage of abraded swarf through the abrasive article. Methods of making the abrasive article are also disclosed.

Abstract: A star rating management method for deployment and implementation of gas field development wells first establishes the expression for estimating the gas well initial production rate and the dimensionless production curve; then determines the annual production of the new well for every year during the evaluation period and determines the internal rate of return of the new gas well. If the internal rate of return fails to meet the requirement, the deployment location and construction technology of the new well are re-optimized. Corresponding stars rating are determined according to the internal rate of return of the gas wells. The new well is drilled according to the deployment location that can meet the economic benefit requirements. After the gas well is drilled, a more detailed fracturing design is carried out, and the internal rate of return of the gas well and the star rating of development benefit are redetermined.

Abstract: In general, techniques are described for a personal protective equipment (PPE) management system (PPEMS) that uses images of optical patterns embodied on articles of personal protective equipment (PPEs) to identify safety conditions that correspond to usage of the PPEs. In one example, an article of personal protective equipment (PPE) includes a first optical pattern embodied on a surface of the article of PPE; a second optical pattern embodied on the surface of the article of PPE, wherein a spatial relation between the first optical pattern and the second optical pattern is indicative of an operational status of the article of PPE.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: The present disclosure includes in one instance an optical article comprising a data rich plurality of retroreflective meats that are configured in a spatially defined arrangement, where the plurality of retroreflective elements comprise retroreflective elements having at least two different retroreflective properties, and where data rich means information that is readily machine interpretable. The present disclosure also includes a system comprising the previously mentioned optical article, an optical system, and an inference engine for interpreting and classifying the plurality of retroreflective elements wherein the optical system feeds data to the inference engine.

Abstract: This disclosure describes a composition that includes a bulk diffuser that includes a film having a major surface; the film includes a polymer, and a scattering element. The scattering element includes a silicone bead having a mean particle diameter in a range of 2 micrometers (?m) to 9 ?m. The linear density of the film is at least 5.1 Wi*?m, wherein the linear density equals the product of the mass fraction of the silicone bead (Wi) and film thickness in micrometers (?m). This disclosure further describes methods of making the film and the bulk diffuser and methods of using the film including, for example, as a bulk diffuser in a sign box.

Abstract: Modified adhesive layers are prepared by contacting an adhesive layer to a modified microstructured release liner. The modified release liner has a release layer surface with a set of microstructured depressions and a discontinuous pattern of ink material located on the surface of the release layer. A portion of the discontinuous pattern of ink material overlaps with and is located within some of the depressions. The ink material comprises a non-adhesive but adhesively transferrable material, or an adhesive material. Upon removal of the adhesive from the release liner, the ink material transfers to the adhesive surface.

Abstract: A retroreflective article including a binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer. At least some of the retroreflective elements include a reflective layer that is embedded between the transparent microsphere and the binder layer. At least some of the embedded reflective layers are localized reflective layers.

Abstract: A retroreflective article including a binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer and a discontinuous binder-borne reflective layer that is provided by a portion of a fractured binder-borne reflective sheet.

Abstract: A method for evaluating a gas well productivity with eliminating an influence of liquid loading includes steps of: collecting basic data of a liquid loading gas well; according to a relative density of natural gas, a formation depth, and a casing pressure during a productivity test, determining a pressure generated by a static gas column in an annular space between a casing and a tubing from a well head to a bottomhole of the gas well, and obtaining a bottomhole pressure without liquid loading; according to a pseudo-pressure of a formation pore pressure, pseudo-pressures of the bottomhole pressure respectively under the conditions of liquid loading and no liquid loading, and a production rate under the condition of liquid loading, determining a production rate without liquid loading, and determining an absolute open flow rate with eliminating the influence of liquid loading.