Abstract: In some examples, an optically active article includes a retroreflective substrate; and at least one security element disposed at the retroreflective substrate; an article message disposed at the retroreflective substrate, and wherein the at least one security element comprises validation information that is detectable outside a visible light spectrum, and wherein a combination of the article message and the validation information of the at least one security element indicates whether the optically active article is counterfeit.

Abstract: A fingerprint imaging system is described comprising a film including an optically transparent self-wetting adhesive layer adhered to an imaging surface of an electronic optical image sensor. Also described is a method of use of an optical imaging system, and a film and multilayer film suitable for use with a fingerprint imaging system.

Abstract: Described herein is composite article comprising a substrate; and on at least one face of the substrate a multilayered coating disposed thereon.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: An arrayed waveguide grating (AWG) based multi-core and multi-wavelength interconnection network, comprising N upper-level switches, N lower-level switches, and a network intermediate stage, with each upper- and lower-level switches has N CWDM optical transceiving modules. The N optical transceiving modules of each upper-level switch is connected with n m×1 multi-core optical multiplexing modules, the N optical transceiving modules of each lower-level switch is connected with n 1×m multi-core demultiplexing modules, the network intermediate stage is comprised of n2 r×r multi-core and multi-wavelength wiring modules. The upper-level multi-core optical multiplexing modules, the lower-level multi-core demultiplexing modules, and the n2 r×r multi-core and multi-wavelength wiring modules of the network intermediate stage are connected via an m-core MPO-MPO optical fiber jumper. The wiring complexity of the interconnection network is O(N2/r), with employment of a wavelength set of ?={?0, . . . , ?k-1}.

Abstract: Laser-personalizable security articles include multi-layer security documents. The multi-layer security document includes an optically transparent cover layer, a composite image and an imagable layer adjacent to the cover layer. The first surface of the cover layer is at least partially a microstructured surface, where the microstructured surface forms microlenses or a lenticular surface. The composite image is made by a collection of complete or partial images viewed through the microstructured surface of the cover layer. The composite image is located on or within the second surface of the cover layer. The imagable layer is a laser imagable layer. When imaged, a personalized second composite three dimensional image is created on or in the imagable layer.

Abstract: Provided herein are retroreflective colored article having a predetermined pattern of beaded and unbeaded regions and at least one polymeric color layer (130) covering at least a portion of the beaded and unbeaded regions, a reflector layer (140) covering the colour layer, and a carrier (150). Also disclosed are methods for making the articles.

Abstract: Processing tapes have special properties to permit them to be used to prepare laminate articles, such as security articles. The processing tapes include a backing, a pressure sensitive adhesive layer and a release surface covering the pressure sensitive adhesive layer. The backing is a dimensionally stable transparent polymeric film, and the surface on which the pressure sensitive is coated may be a treated surface. The pressure sensitive adhesive is a transparent pressure sensitive adhesive that includes a crosslinked (meth)acrylate-based polymer and has a refractive index in the range of 1.45-1.55. The (meth)acrylate-based polymer includes alkyl (meth)acrylate monomers and may include acidic monomers.

Abstract: A moisture-curable composition includes a polymer preparable by free-radical copolymerization of monomers comprising at least one monomer A and at least one monomer B. Monomer(s) A comprise free-radically polymerizable hydrolyzable silane. Monomer(s) B include a divalent group selected from the group consisting of —(CF2O)a—, —(CF2CF2O)b—, —(CF2CF2CF2O)c—, —(CF2CF2CF2CF2O)d—, —(CF2CF(CF3)O)e—, and combinations thereof, wherein a, b, c, d, and e represent integers in the range of from 0 to 130, and wherein 1?<a+b+c+d+e?130. A composite article includes a layer of a composition on a substrate. The composition comprises a cross-linked reaction product of components including the moisture-curable composition. Methods of making the composite article are also disclosed.

Abstract: A fingerprint imaging system is described comprising a film including an optically transparent self-wetting adhesive layer adhered to an imaging surface of an electronic optical image sensor. Also described is a method of use of an optical imaging system, and a film and multilayer film suitable for use with a fingerprint imaging system.

Abstract: Retroreflecting optical constructions are disclosed. A disclosed retroreflecting optical construction includes a retroreflecting layer that has a retroreflecting structured major surface, and an optical film that is disposed on the retroreflecting structured major surface of the retroreflecting layer. The optical film has an optical haze that is not less than about 30%. Substantial portions of each two neighboring major surfaces in the retroreflecting optical construction are in physical contact with each other.

Abstract: A moisture-curable composition includes a polymer preparable by free-radical copolymerization of monomers comprising at least one monomer A and at least one monomer B. Monomer(s) A comprise free-radically polymerizable hydrolyzable silane. Monomer(s) B include a divalent group selected from the group consisting of —(CF2O)a—, —(CF2CF2O)b—, —(CF2CF2CF2O)c—, —(CF2CF2CF2CF2O)d—, —(CF2CF(CF3)O)e—, and combinations thereof, wherein a, b, c, d, and e represent integers in the range of from 0 to 130, and wherein 1?<a+b+c+d+e?130. A composite article includes a layer of a composition on a substrate. The composition comprises a cross- linked reaction product of components including the moisture-curable composition. Methods of making the composite article are also disclosed.

Abstract: Described herein is composite article comprising a substrate; and on at least one face of the substrate a multilayered coating disposed thereon.

Abstract: The present disclosure provides a semiconductor structure includes a semiconductor layer having a first and a second surface, and an interlayer dielectric (ILD) defining a first metal gate and a second metal gate over the first and second surface, respectively. The first and second metal gate include a first SAC hard mask and a second SAC hard mask, respectively, wherein the first the second SAC hard mask have opposite stress to channel regions underneath the first and second metal gate, respectively. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming metal gate recesses, forming metal gates and SAC hard masks in the metal gate recesses, respectively.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first capacitor structure. The first capacitor structure includes a fin structure formed over a substrate and a first gate structure formed over the substrate. In addition, a first portion of the first gate structure overlaps with a portion of the fin structure. The first capacitor structure further includes a first hard mask structure formed over the first portion of the first gate structure and a first conductive structure formed on the first hard mask structure over the first portion of the first gate structure. The first capacitor structure further includes a first contact formed on a second portion of the first gate structure. In addition, the first contact is in direct contact with the second portion of the first gate structure.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: Retroreflecting optical constructions are disclosed. A disclosed retroreflecting optical construction includes a retroreflecting layer that has a retroreflecting structured major surface, and an optical film that is disposed on the retroreflecting structured major surface of the retroreflecting layer. The optical film has an optical haze that is not less than about 30%. Substantial portions of each two neighboring major surfaces in the retroreflecting optical construction are in physical contact with each other.

Abstract: A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure also includes a gate electrode formed over the fin structure, and the gate electrode has a grid-like pattern when seen from a top-view.

Abstract: The present disclosure provides a semiconductor structure includes a semiconductor layer having a first and a second surface, and an interlayer dielectric (ILD) defining a first metal gate and a second metal gate over the first and second surface, respectively. The first and second metal gate include a first SAC hard mask and a second SAC hard mask, respectively, wherein the first the second SAC hard mask have opposite stress to channel regions underneath the first and second metal gate, respectively. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming metal gate recesses, forming metal gates and SAC hard masks in the metal gate recesses, respectively.