Abstract: An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.

Abstract: A pixel structure suitable for being disposed on a substrate is provided. The pixel structure includes a display unit and a photo sensitive unit. The display unit includes an active device and a pixel electrode. The active device is disposed on the substrate, and the pixel electrode is electrically connected to the active device. The photo sensitive unit includes a photocurrent readout unit, a shielding electrode, a photosensitive dielectric layer, and a transparent electrode. The shielding electrode is electrically connected to the photocurrent readout unit, and the photosensitive dielectric layer is disposed on the shielding electrode. The transparent electrode is disposed on the photosensitive dielectric layer that is interposed between the shielding electrode and the transparent electrode.

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.

Abstract: A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Abstract: A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.

Abstract: One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Abstract: A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode.

Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process. First, a substrate comprising a first region and a second region is provided. An amorphous silicon layer and a mask layer are formed on the substrate in sequence. Then, a photo-etching process is performed to remove the mask layer in the first region. A heat-retaining capping layer is formed on the mask layer and the amorphous silicon layer. After that, an excimer laser crystallization process is performed so that the amorphous silicon layer in the first region is crystallized into a polysilicon film.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process is disclosed. First, a substrate with a first region, a second region surrounding the first region, and a third region is provided. An amorphous silicon film is formed on the substrate. A photo-etching process is performed to remove parts of amorphous silicon film in the third region to form an alignment mark. Then, a mask layer is formed on the amorphous silicon film and a second photo-etching process is performed to remove the mask layer in the first region to expose the amorphous silicon film in the first region. After that, an excimer laser irradiation process is performed so that the amorphous silicon film in the first region is crystallized and becomes a polysilicon film.

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process. First, a substrate comprising a first region and a second region is provided. An amorphous silicon layer and a mask layer are formed on the substrate in sequence. Then, a photo-etching process is performed to remove the mask layer in the first region. A heat-retaining capping layer is formed on the mask layer and the amorphous silicon layer. After that, an excimer laser crystallization process is performed so that the amorphous silicon layer in the first region is crystallized into a polysilicon film.

Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process is disclosed. First, a substrate with a first region, a second region surrounding the first region, and a third region is provided. An amorphous silicon film is formed on the substrate. A photo-etching process is performed to remove parts of amorphous silicon film in the third region to form an alignment mark. Then, a mask layer is formed on the amorphous silicon film and a second photo-etching process is performed to remove the mask layer in the first region to expose the amorphous silicon film in the first region. After that, an excimer laser irradiation process is performed so that the amorphous silicon film in the first region is crystallized and becomes a polysilicon film.

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.