Abstract: A radiation detector includes a semiconductor layer including a light receiving portion configured to receive radiation, and a cooling device disposed at a distance from the semiconductor layer in a direction perpendicular to a main surface of the semiconductor layer. A first member and a second member are provided along a plane that is positioned between the semiconductor layer and the cooling device and that is parallel to the main surface of the semiconductor layer, the second member having physical properties different from physical properties of the first member. In the direction perpendicular to the main surface of the semiconductor layer, the first member and a third member are coupled via a first buffer member, and the second member and the third member are coupled via an adhesive layer.

Abstract: A radiation detector includes a semiconductor layer, a circuit board, and a heat conduction member. A first area in which the semiconductor layer and the heat conduction member overlap each other in this order, and the circuit board does not overlap, and a second area in which the semiconductor layer, the circuit board, and the heat conduction member overlap each other in this order are provided adjacent to each other in a case where the radiation detector is seen through from a direction perpendicular to a main surface of the semiconductor layer. The first area is provided with a space separating the semiconductor layer and the heat conduction member in the direction perpendicular to the main surface at a boundary portion with the second area.

Abstract: The present disclosure relates to an organic light-emitting device including an insulating layer, an organic light-emitting element disposed on the main surface of the insulating layer, and a color filter layer covering the organic light-emitting element and including a first color filter that passes light with a first wavelength and a second color filter that passes light with a second wavelength different from the first wavelength, wherein the concentration of an organic alkali having a nitrogen atom and a hydroxy group contained in the color filter layer is less than 108.2 ng/cm2.

Abstract: A method includes preparing an electronic component that includes an element plate including an element region provided with a functional element and a peripheral region disposed around the element region, a counter plate facing the element region and the peripheral region, a first resin member disposed between at least one of the element region and the peripheral region and the counter plate, and a second resin member disposed between the peripheral region and the counter plate, applying light to the element plate through the counter plate and the second resin member, and measuring a gap between the counter plate and the element plate based on light reflected between the element plate and the second resin member and light reflected between the counter plate and the second resin member.

Abstract: A method includes preparing an electronic component that includes an element plate including an element region provided with a functional element and a peripheral region disposed around the element region, a counter plate facing the element region and the peripheral region, a first resin member disposed between at least one of the element region and the peripheral region and the counter plate, and a second resin member disposed between the peripheral region and the counter plate, applying light to the element plate through the counter plate and the second resin member, and measuring a gap between the counter plate and the element plate based on light reflected between the element plate and the second resin member and light reflected between the counter plate and the second resin member.

Abstract: An electroplating apparatus can form a plated film having a more uniform thickness and good film quality over an entire surface of a substrate having a conductive layer (seed layer) whose resistivity is equal to or higher than that of copper.

Abstract: A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus includes a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed with respect to the seal member such that at least part of the auxiliary cathode is exposed on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.

Abstract: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

Abstract: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

Abstract: A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus included a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed to the seal member such that at least part of the auxiliary cathode expose on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.

Abstract: A plating method can form a plated film having a uniform thickness over the entire surface, including the peripheral surface, of a substrate. The plating method includes: disposing an anode so as to face a conductive film, formed on a substrate, which serves as a cathode, and disposing an auxiliary cathode on an ring-shaped seal member for sealing a peripheral portion of the substrate; bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution; and supplying electric currents between the anode and the conductive film, and between the anode and the auxiliary cathode to carry out plating.

Abstract: A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.

Abstract: The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate.

Abstract: An electroplating apparatus can form a plated film having a more uniform thickness and good film quality over an entire surface of a substrate having a conductive layer (seed layer) whose resistivity is equal to or higher than that of copper.

Abstract: A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.

Abstract: A plating apparatus can securely carry out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

Abstract: A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method including: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of the substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on the conductive layer side, and an anode solution into the space between the conductive layer and the anode on the anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, the plating solution containing 25 to 75 g/L of copper ions and 0.4 mole/L or more of an organic acid or an inorganic acid, and the anode solution being of the same composition as said plating solution, or containing 0 to 75 g/L of copper ions and 0.

Abstract: An apparatus and a method for processing substrate are generally used for apparatuses for wet-type process of substrate, such as an electrolytic processing apparatus for use in forming interconnects by embedding a metal such as copper (Cu) or the like in fine interconnect patterns (recesses) that are formed in a substrate such as a semiconductor wafer and for use in forming bumps for electrical connections.

Abstract: An electrolytic solution control method can control the composition of an electrolytic solution efficiently with high precision, and can remove a partially decomposed product of an organic component from an electrolytic solution. The electrolytic solution control method includes storing an electrolytic solution containing an organic component and an inorganic component in an electrolytic solution storage tank while controlling and keeping the electrolytic solution at a predetermined composition, adjusting an inorganic component of the waste electrolytic solution after use in electrolytic processing in an electrolytic processing apparatus, and then returning the waste electrolytic solution to the electrolytic solution storage tank.

Abstract: A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.