Patents by Inventor Kuo Pin Chang

Kuo Pin Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7777215
    Abstract: A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 ?, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: August 17, 2010
    Assignee: Macronix International Co., Ltd.
    Inventors: Wei-Chih Chien, Kuo-Pin Chang, Erh-Kun Lai, Kuang Yeu Hsieh
  • Publication number: 20100148142
    Abstract: Memory devices are described along with methods for manufacturing. A memory device as described herein includes a first electrode and a second electrode. The memory device further includes a diode and an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide. The diode and the metal-oxide memory element are arranged in electrical series between the first electrode and the second electrode.
    Type: Application
    Filed: December 11, 2008
    Publication date: June 17, 2010
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: WEI-CHIH CHIEN, Kuo-Pin Chang, Yi-Chou Chen, Erh-Kun Lai, Kuang-Yeu Hsieh
  • Publication number: 20100001330
    Abstract: A method of fabricating a semiconductor device is provided. The method comprises: (a) providing a first and a second conductor; (b) providing a conductive layer; (c) forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.
    Type: Application
    Filed: July 2, 2008
    Publication date: January 7, 2010
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wei-Chih CHIEN, Kuo-Pin CHANG, Erh-Kun LAI, Kuang-Yeu HSIEH
  • Publication number: 20090279343
    Abstract: Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element. In embodiments the activating energy can be applied by applying electrical and/or thermal energy to the metal-oxide material.
    Type: Application
    Filed: February 6, 2009
    Publication date: November 12, 2009
    Applicant: MACRONIX INTERNATIONAL CO.,LTD.
    Inventors: Kuo-Pin Chang, Yi-Chou Chen, Wei-Chih Chien, Erh-Kun Lai
  • Publication number: 20090154222
    Abstract: Memory devices and methods for operating such devices are described herein. A method as described herein for operating a memory device includes applying a sequence of bias arrangements across a selected metal-oxide memory element to change the resistance state from a first resistance state in a plurality of resistance states to a second resistance state in the plurality of resistance states. The sequence of bias arrangements comprise a first set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the first resistance state to a third resistance state, and a second set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the third resistance state to the second resistance state.
    Type: Application
    Filed: February 19, 2009
    Publication date: June 18, 2009
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wei-Chih Chien, Kuo-Pin Chang, Yi-Chou Chen, Erh-Kun Lai, Kuang-Yeu Hsieh
  • Publication number: 20090020740
    Abstract: A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 ?, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.
    Type: Application
    Filed: July 18, 2008
    Publication date: January 22, 2009
    Applicant: Macronix International Co., Ltd.
    Inventors: Wei-Chih CHIEN, Kuo-Pin Chang, Erh-Kun Lai, Kuang Yeu Hsieh
  • Patent number: 6243921
    Abstract: A clip assembly for a pacifier includes a fastener, a cover having one side fixedly engaged with the fastener and another side provided with a resilient projection, a circular container having radial outlet and an axle at a central portion thereof, a reel fitted within the circular container and having a center hole receiving the axle, the reel having a circular recess provided with a plurality of radial teeth on an inner circumference thereof and two positioning members adjacent to the radial teeth, a spiral spring fitted within the circular recess of the reel and having an inner end fixedly secured to the axle and an outer end fixedly connected to the positioning members, a circular plate mounted in the circular recess to prevent the spiral spring from getting out of the circular recess, a cord having an end fixedly secured to the circumferential groove, and a retainer fixedly connected to another end of the cord and having a fastening member and a linking chain having a plurality of ball-shaped elements en
    Type: Grant
    Filed: November 30, 1999
    Date of Patent: June 12, 2001
    Inventor: Kuo Pin Chang