Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: Provided is a pharmaceutical composition for preventing or treating osteoarthritis, the pharmaceutical composition including, as an active ingredient, obtusifolin, a derivative thereof, or a pharmaceutically acceptable salt thereof. The composition according to an aspect inhibits cartilage destruction-promoting factors and alleviates inflammatory responses, thereby exhibiting significantly excellent effects for preventing or treating osteoarthritis.

Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.

Abstract: An orthodontic wire bending device includes a providing part, a bending unit and a cutting part. The providing part is configured to provide a wire. The bending unit is disposed at a front side of the providing part, and includes a fixing part and a bending part. The fixing part is configured to fix the wire. The bending part is configured to bend the wire fixed by the fixing part. The cutting part is configured to cut the wire bent by the bending part. The bending part includes a bending module, and the bending module is rotated along a circumferential direction or moves along a direction to make contact with at least one side of the wire for bending the wire.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A core-shell copolymer, a method of making the same, and a thermoplastic resin composition including the same are disclosed herein. In some embodiments, a core-shell copolymer includes a core and a shell surrounding the core, the core includes a conjugated diene-based monomer-derived repeating unit and a phosphate-based cross-linking agent-derived cross-linking part represented by Formula 1, and the shell includes a first alkyl (meth)acrylate monomer-derived repeating unit, a second alkyl (meth)acrylate monomer-derived repeating unit, and a sulfonate-based ionic monomer-derived repeating unit represented by Formula 2. The core is 68 parts to 92 parts and the shell is 8 parts to 32 parts, based on 100 parts of the core-shell copolymer, the core has a swell index of 2.7 to 10.9, the shell includes 1 wt % to 16 wt % of the sulfonate-based ionic monomer-derived repeating unit, and the shell has a weight average molecular weight of 105,000 g/mol to 645,000 g/mol.

Abstract: The present invention performs a reference point detecting step (S20) to select a reference point by performing pattern analysis based on a characteristic pattern shown in a total leakage current (IT) when an applied voltage is 0V, a resistive leakage current calculating step (S30) to calculate a resistive leakage current by Fourier series-expanding the total leakage current (IT) starting at the reference point, and reference point verifying/correcting steps (S40 and S41) to correct the reference point until a characteristic pattern of the resistive leakage current (IR) according to non-linear resistance characteristics of the surge arrester (1) is shown so that the resistive leakage current (IR) is recalculated, and the present invention determines that the resistive leakage current (IR) calculated based on the completely corrected reference point is the resistive leakage current of the surge arrester (1).

Abstract: Provided is a method of controlling local release of target compounds by patterning a hydrogel carrying a bone morphogenetic protein or anticancer drug as the target compounds onto an electrospun nanoporous membrane. The hydrogel is capable of controlling local release of the bone morphogenetic protein or anticancer drug as a carrier of the bone morphogenetic protein or anticancer. And the electrospun nanoporous membrane performs a basic function of the membrane of preventing infiltration of connective tissue. Thus, there is an advantage in that the hydrogel patterned nanoporous membrane can facilitate generation of controlled bone in a local region and degradation of cancer in a local region.

Abstract: The present invention relates to a device and method for detecting a surge arrester resistive leakage current for reducing the computational load, which may significantly reduce the computational load as the Fourier transform process need not be repeated in the process of searching to match a section to be Fourier transformed to a section in-phase with AC voltage to extract the resistive leakage current component from the Fourier series of surge arrester leakage current and enables real-time detection of the resistive leakage current by shortening the section searching process of one-period leakage current by searching for the section of one-period leakage current, which is to be initially Fourier-transformed, based on the characteristic pattern that it is repeatedly generated by application of an AC voltage.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: The present invention relates to resistive leakage current in a surge arrester that measures not voltage but leakage current alone in the surge arrester to obtain a resistive leakage current included in the leakage current so as to compensate for shortcomings in conventional metal-oxide surge arresters.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: The present disclosure relates to a method for preparing a nerve conduit, more particularly to a method for preparing a porous nerve conduit having micropores formed in microchannels and the nerve conduit prepared according to the present disclosure can be usefully used in in-vitro and in-vivo researches on nerves.

Abstract: Provided is a method of manufacturing a cathode active material for a lithium secondary battery. The method of manufacturing a cathode active material for a lithium secondary battery includes mixing a transition metal macro precursor and a lithium precursor to prepare a preliminary lithium-transition metal composite oxide particle; calcining the prepared preliminary lithium-transition metal composite oxide particle; and pulverizing the calcined preliminary lithium-transition metal composite oxide particle to form lithium-transition metal composite oxide particle. Accordingly, the process may be easily performed and a single crystal cathode active material having a uniform size may be manufactured.

Abstract: The cathode active material according to embodiments of the present invention includes a lithium composite oxide particle having a form of secondary particle in which a plurality of primary particle are aggregated, wherein the primary particles respectively include a lithium conduction pathway through which lithium ions are diffused. Wherein the primary particles include a first particle, and the first particle has an angle of 45° to 90° formed by a direction from a center of the first particle to a center of the lithium composite oxide particle and a direction of the lithium conduction pathway included in the first particle, wherein a ratio of the number of the first particles among the primary particles located on a surface of the lithium composite oxide particle is 20% or more.

Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is firmed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.