Patents by Inventor Kwen-Woo Han

Kwen-Woo Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition for etching silicon nitride film and etching method using same
    Patent number: 11608471
    Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: March 21, 2023
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Ki Wook Hwang, Sang Ran Koh, Youn Jin Cho, Jung Min Choi, Kwen Woo Han, Jun Young Jang, Yong Woon Yoon
  • Composition for forming silica layer, manufacturing method for silica layer, and silica layer
    Patent number: 11518909
    Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: December 6, 2022
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kunbae Noh, Taeksoo Kwak, Junyoung Jang, Yoonyoung Koo, Yonggoog Kim, Jingyo Kim, Jin-Hee Bae, Jun Sakong, Jinwoo Seo, Sooyeon Sim, Huichan Yun, Jiho Lee, Kwen-Woo Han, Byeong Gyu Hwang
  • Resist underlayer composition, and method of forming patterns using the composition
    Patent number: 11493848
    Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: November 8, 2022
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Soonhyung Kwon, Shinhyo Bae, Hyeon Park, Jaeyeol Baek, Beomjun Joo, Yoojeong Choi, Kwen-Woo Han
  • Etching composition for silicon nitride layer and method of etching silicon nitride layer using the same
    Patent number: 11254871
    Abstract: An etching composition for silicon nitride layers and a method of etching a silicon nitride layer using the composition, the etching composition including an inorganic acid or a salt thereof; a solvent; an acid-modified silica or an acid-modified silicic acid; and a cyclic compound containing four or more nitrogen atoms.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: February 22, 2022
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Jung Min Choi, Jun Young Jang, Hyun Jung Kim, Hyung Rang Moon, Ji Hye Lee, Kwen Woo Han, Ki Wook Hwang
  • COMPOSITION FOR ETCHING SILICON NITRIDE FILM AND ETCHING METHOD USING SAME
    Publication number: 20210363423
    Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1 and a reaction product thereof, and an etching method using the same are disclosed.
    Type: Application
    Filed: April 5, 2019
    Publication date: November 25, 2021
    Inventors: Ki Wook HWANG, Sang Ran KOH, Youn Jin CHO, Jung Min CHOI, Kwen Woo HAN, Jun Young Jang, Yong Woon YOON
  • ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND METHOD OF ETCHING SILICON NITRIDE LAYER USING THE SAME
    Publication number: 20210115335
    Abstract: An etching composition for silicon nitride layers and a method of etching a silicon nitride layer using the composition, the etching composition including an inorganic acid or a salt thereof; a solvent; an acid-modified silica or an acid-modified silicic acid; and a cyclic compound containing four or more nitrogen atoms.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 22, 2021
    Inventors: Jung Min CHOI, Jun Young JANG, Hyun Jung KIM, Hyung Rang MOON, Ji Hye LEE, Kwen Woo HAN, Ki Wook HWANG
  • COMPOSITION FOR FORMING SILICA LAYER, MANUFACTURING METHOD FOR SILICA LAYER, AND SILICA LAYER
    Publication number: 20200369915
    Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.
    Type: Application
    Filed: February 13, 2018
    Publication date: November 26, 2020
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Kunbae NOH, Taeksoo KWAK, Junyoung JANG, Yoonyoung KOO, Yonggoog KIM, Jingyo KIM, Jin-Hee BAE, Jun SAKONG, Jinwoo SEO, Sooyeon SIM, Huichan YUN, Jiho LEE, Kwen-Woo HAN, Byeong Gyu HWANG
  • Resist underlayer composition, and method of forming patterns using the composition
    Patent number: 10732504
    Abstract: A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: August 4, 2020
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Shinhyo Bae, Soonhyung Kwon, Hyeon Park, Jaeyeol Baek, Beomjun Joo, Yoojeong Choi, Kwen-Woo Han
  • RESIST UNDERLAYER COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20190129307
    Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,
    Type: Application
    Filed: October 30, 2018
    Publication date: May 2, 2019
    Inventors: Soonhyung KWON, Shinhyo BAE, Hyeon PARK, Jaeyeol BAEK, Beomjun JOO, Yoojeong CHOI, Kwen-Woo HAN
  • Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer
    Patent number: 10093830
    Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: October 9, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Wan-Hee Lim, Taek-Soo Kwak, Han-Song Lee, Eun-Su Park, Sun-Hae Kang, Bo-Sun Kim, Sang-Kyun Kim, Sae-Mi Park, Jin-Hee Bae, Jin-Woo Seo, Jun-Young Jang, Youn-Jin Cho, Kwen-Woo Han, Byeong-Gyu Hwang
  • RESIST UNDERLAYER COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20180224744
    Abstract: A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,
    Type: Application
    Filed: January 10, 2018
    Publication date: August 9, 2018
    Inventors: Shinhyo BAE, Soonhyung KWON, Hyeon PARK, Jaeyeol BAEK, Beomjun JOO, Yoojeong CHOI, Kwen-Woo HAN
  • Composition for forming silica based layer, and method for manufacturing silica based layer
    Patent number: 9902873
    Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: February 27, 2018
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Jin-Hee Bae, Taek-Soo Kwak, Han-Song Lee, Youn-Jin Cho, Byeong-Gyu Hwang, Bo-Sun Kim, Sae-Mi Park, Eun-Su Park, Jin-Woo Seo, Wan-Hee Lim, Jun-Young Jang, Kwen-Woo Han
  • Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming
    Patent number: 9890255
    Abstract: Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: February 13, 2018
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Hyun-Ji Song, Eun-Su Park, Sang-Hak Lim, Taek-Soo Kwak, Go-Un Kim, Mi-Young Kim, Bo-Sun Kim, Bong-Hwan Kim, Yoong-Hee Na, Jin-Hee Bae, Jin-Woo Seo, Hui-Chan Yun, Han-Song Lee, Jong-Dae Jeon, Kwen-Woo Han, Seung-Hee Hong, Byeong-Gyu Hwang
  • COMPOSITION FOR FORMING SILICA LAYER, METHOD FOR MANUFACTURING SILICA LAYER, AND SILICA LAYER
    Publication number: 20170250206
    Abstract: A composition for forming a silica layer, a method for manufacturing a silica layer, a silica layer manufactured by the method, and an electronic device including the silica layer.
    Type: Application
    Filed: September 12, 2016
    Publication date: August 31, 2017
    Inventors: Kwen-Woo Han, Taeksoo Kwak, Kunbae Noh, Jinwoo Seo, Sooyeon Sim, Huichan Yun, Jiho Lee, Junyoung Jang, Byeong Gyu Hwang
  • Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer
    Patent number: 9738787
    Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: August 22, 2017
    Assignee: CHEIL INDUSTRY, INC.
    Inventors: Hui-Chan Yun, Taek-Soo Kwak, Mi-Young Kim, Sang-Hak Lim, Kwen-Woo Han, Go-Un Kim, Bong-Hwan Kim, Sang-Kyun Kim, Yoong-Hee Na, Eun-Su Park, Jin-Hee Bae, Hyun-Ji Song, Han-Song Lee, Seung-Hee Hong
  • COMPOSITION FOR FORMING A SILICA BASED LAYER, METHOD FOR MANUFACTURING SILICA BASED LAYER, AND ELECTRONIC DEVICE INCLUDING THE SILICA BASED LAYER
    Publication number: 20160177133
    Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.
    Type: Application
    Filed: September 1, 2015
    Publication date: June 23, 2016
    Inventors: Wan-Hee Lim, Taek-Soo Kwak, Han-Song Lee, Eun-Su Park, Sun-Hae Kang, Bo-Sun Kim, Sang-Kyun Kim, Sae-Mi Park, Jin-Hee Bae, Jin-Woo Seo, Jun-Young Jang, Youn-Jin Cho, Kwen-Woo Han, Byeong-Gyu Hwang
  • Rinse liquid for insulating film and method of rinsing insulating film
    Patent number: 9312122
    Abstract: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: April 12, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Jin-Hee Bae, Han-Song Lee, Wan-Hee Lim, Go-Un Kim, Taek-Soo Kwak, Bo-Sun Kim, Sang-Kyun Kim, Yoong-Hee Na, Eun-Su Park, Jin-Woo Seo, Hyun-Ji Song, Youn-Jin Cho, Kwen-Woo Han, Byeong-Gyu Hwang
  • COMPOSITION FOR FORMING SILICA BASED LAYER, AND METHOD FOR MANUFACTURING SILICA BASED LAYER
    Publication number: 20150337168
    Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.
    Type: Application
    Filed: December 5, 2014
    Publication date: November 26, 2015
    Inventors: Jin-Hee BAE, Taek-Soo KWAK, Han-Song LEE, Youn-Jin CHO, Byeong-Gyu HWANG, Bo-Sun KIM, Sae-Mi PARK, Eun-Su PARK, Jin-Woo SEO, Wan-Hee LIM, Jun-Young JANG, Kwen-Woo HAN
  • COMPOSITION FOR FORMING SILICA-BASED INSULATING LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATING LAYER, SILICA-BASED INSULATING LAYER, AND METHOD FOR MANUFACTURING SILICA-BASED INSULATING LAYER
    Publication number: 20150274980
    Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.
    Type: Application
    Filed: August 16, 2013
    Publication date: October 1, 2015
    Applicant: CHEIL INDUSTRIES INC.
    Inventors: Hui-Chan Yun, Taek-Soo Kwak, Mi-Young Kim, Sang-Hak Lim, Kwen-Woo Han, Go-Un Kim, Bong-Hwan Kim, Sang-Kyun Kim, Yoong-Hee Na, Eun-Su Park, Jin-Hee Bae, Hyun-Ji Song, Han-Song Lee, Seung-Hee Hong
  • MODIFIED HYDROGENATED POLYSILOXAZANE, COMPOSITION COMPRISING SAME FOR FORMING SILICA-BASED INSULATION LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATION LAYER, SILICA-BASED INSULATION LAYER, AND METHOD FOR PREPARING SILICA-BASED INSULATION LAYER
    Publication number: 20150225508
    Abstract: Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.
    Type: Application
    Filed: July 15, 2013
    Publication date: August 13, 2015
    Applicant: CHEIL INDUSTRIES INC.
    Inventors: Hyun-Ji Song, Eun-Su Park, Sang-Hak Lim, Taek-Soo Kwak, Go-Un Kim, Mi-Young Kim, Bo-Sun Kim, Bong-Hwan Kim, Yoong-Hee Na, Jin-Hee Bae, Jin-Woo Seo, Hui-Chan Yun, Han-Song Lee, Jong-Dae Jeon, Kwen-Woo Han, Seung-Hee Hong, Byeong-Gyu Hwang