Abstract: Provided is a lithium secondary battery including a positive electrode, a negative electrode, a separator, and a non-aqueous electrolyte, wherein the positive electrode includes a positive electrode active material comprising lithium iron phosphate particles, and the positive electrode has a loading amount of 450 mg/25 cm2 to 740 mg/25 cm2, and the non-aqueous electrolyte includes a lithium salt, an organic solvent, and an additive, wherein the organic solvent includes ethylene carbonate, and dimethyl carbonate, and the dimethyl carbonate is included in 5 vol % to 75 vol % in the organic solvent, and the additive contains vinylene carbonate, and the weight ratio of the vinylene carbonate to the dimethyl carbonate is greater than 0 to 0.2 or less.

Abstract: An electrolyte additive comprising a compound represented by Formula 1 below forms a coating film on an electrode surface in the activation of a secondary battery, thereby the generation of a large amount of gas under a high temperature condition can be prevented, and a cell OCV drop and a decrease in capacity retention rate, which are caused by elution of metal ions from an electrode, can be effectively prevented, resulting in effective improvement in durability, performance and high-temperature safety of the battery, wherein R1, R2, and M are described herein.

Abstract: According to an embodiment, an aerosol generating device includes: a battery configured to supply a battery voltage having a first voltage value; a first boost circuit configured to boost the battery voltage to a first boost voltage having a second voltage value greater than the first voltage value; a second boost circuit configured to boost the first boost voltage to a second boost voltage having, as a peak-to-peak voltage value, a third voltage value greater than the second voltage value; a vibrator configured to generate ultrasonic vibration according to the second boost voltage and atomize an aerosol generating material; and a processor configured to control the battery, the first boost circuit, and the second boost circuit.

Abstract: Provided are a selection element which does not need an intermediate electrode and thus has improved integration, a phase-change memory device having the selection element, and a phase-change memory implemented so that the phase-change memory device has a highly integrated three-dimensional architecture.

Abstract: A cover assembly includes a mouthpiece including one end, that is configured to come into contact with a mouth of a user, and another end opposite to the one end, the mouthpiece configured to move to an open position and a closed position by rotation of the mouthpiece around the other end; and an accommodation unit for accommodating the one end of the mouthpiece in the closed position. The accommodation unit includes a button unit including a body, the button unit configured to contact the one end of the mouthpiece and to be displaced in a longitudinal direction based on the one end being pressed; and a locking unit including a body, the body of the locking unit including a first portion that is configured to contact the one end of the mouthpiece and a second portion that is configured to contact the button unit.

Abstract: Various embodiments relate to an oxide semiconductor having improved resistance through cation/anion substitutional doping, and a manufacturing method therefor, in which: an IGZO channel layer is prepared; carrier diffusion is induced in the IGZO channel layer, by using a group 4 element or a group 7 element, so that carriers remain in the IGZO channel layer; and through carrier diffusion, low resistance contact with the IGZO channel layer can be implemented, with respect to a metal electrode. Various embodiments relate to a thin-film transistor having an ohmic junction structure of an oxide semiconductor, and a manufacturing method therefor.

Abstract: Oxide-based thin film sintered bodies, oxide-based solid electrolyte sheets, and all-solid lithium secondary batteries are disclosed. In some implementations, an oxide-based thin film sintered body includes oxide particles, the oxide-based thin film sintered body having a surface roughness Ra ranging from 0.1 to 3 ?m, wherein Ra is an arithmetical mean height of a surface, wherein the oxide particles absorb light energy in a wavelength range from 10 to 1200 nm and have an energy band gap ranging from 0.1 to 15 eV.

Abstract: An oxide-based film sheet according to an embodiment of the disclosure includes an oxide-based particle, wherein the oxide-based particle includes a colored oxide particle capable of absorbing light energy in a visible light spectrum. An oxide-based solid electrolyte sheet according to an embodiment of the disclosure may be prepared by light-sintering the oxide-based film sheet. According to an embodiment of the disclosure, an oxide-based solid electrolyte sheet in which a connection structure between particles, shapes of the particles, porosity, or the like are appropriately provided may be prepared by light-sintering.

Abstract: The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.

Abstract: A method of operating multiple time alignment timers (TimeAlignmentTimer) is provided for facilitating communication between and evolved Node B (eNB) and a User Equipment (UE) in a Long Term Evolution (LTE) system supporting multiple carriers. The method includes starting a first TAT of a first group including the primary cell, starting a second TAT when Timing Advance (TA) information on a second group not including the primary cell is received; and determining transmission of at least one of a Hybrid Automatic Repeat Request Acknowledgement/Negative-acknowledgement (HARQ ACK/NACK), a physical uplink control channel, and a sounding reference signal according to a start and an expiration of at least one of the first and second TATs.

Abstract: The present embodiment relates to a light transmission band change unit comprising: a base including a first axis; a blade arranged on the base and including a body, which has a first hole having a lens and an infrared pass filter arranged therein, a second hole having an infrared cut filter arranged therein, and a third hole into which the first axis is inserted; a magnet arranged between the base and the blade; a core coupled with the base and having a coil arranged thereon; and a blade cover including an upper plate arranged on the blade so as to have a fourth hole formed at a position corresponding to the lens, wherein at least a portion of the lens is arranged within the fourth hole.

Abstract: Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO channel layer disposed on the substrate, and being produced by converting a non-crystalline IGTO channel layer provided on the substrate to a crystalline IGTO channel layer.

Abstract: Disclosed is a window film for a display device including a light transmitting substrate including a polyamide including a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and a hard coating layer laminated on one surface of the light transmitting substrate: in Chemical Formula 1 and Chemical Formula 2, each of A1, A2, B, and D is the same as defined in the detailed description.

Abstract: The present invention relates to a peptide that specifically recognizes a protein of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) or a portion thereof; a composition for preventing or treating SARS-CoV-2 infection, comprising the peptide; and a composition for detecting SARS-CoV-2, comprising the peptide.

Abstract: Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Abstract: Proposed are an adenine base editor having increased thymine-cytosine sequence-specific cytosine base editing activity, a cytosine base editing method, and a cytosine base editing kit. The editor, produced by introducing a P48R mutation into an adenosine deaminase, has an operating range that is more sophisticated than conventional cytosine base editors, allows cytosine base editing only when cytosine is positioned right behind thymine, thereby enabling elaborate editing even when there is a plurality of cytosines within the range, and enables cytosine to be substituted with thymine or guanine in the presence or absence of UGI, respectively. Therefore, the cytosine base editing composition can be effectively used in the fields of gene therapy or new crop development which requires precise editing of only cytosine in all living organisms, including humans, plants, and bacteria.

Abstract: The present invention relates to an adenine base editor from which cytosine editing activity is removed, a method of editing an adenine base, and method of editing an adenine base. In the present invention, it was confirmed that four mutations (V106W, D108Q, F148A and F149A) in adenosine deaminase increase the specificity for adenine editing by reducing cytosine base editing efficiency, and ABE variants were manufactured by introducing respective mutations into a variety of more improved adenine base editors than ABEmax, and tested, confirming that the mutations significantly decrease a cytosine editing effect. Therefore, the adenine base editor according to the present invention is able to more accurately edit adenine, and the method of editing an adenine base can be effectively used in the field of gene therapy that has to accurately edit only adenine in all living organisms including humans, plants and bacteria or novel crop development.

Abstract: The present invention relates to an electrolyte composition including a lithium salt; a non-aqueous organic solvent; a compound represented by a specific formula; and a perfluoropolyether oligomer, a gel polymer electrolyte including a polymer network which is formed by a polymerization reaction of the electrolyte composition, and a lithium secondary battery including the same.

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and a display device. Since a wavy structure is formed through heat treatment in a structure in which a first buffer layer made of an organic material, a second buffer layer made of a metal oxide and a third buffer layer made of an inorganic material are stacked, it is possible to provide a display device including an array substrate which has stretchable characteristics through the wavy structure while preventing a crack from occurring in the third buffer layer and preventing characteristics of thin film transistors disposed on the third buffer layer from degrading.

Abstract: A method and an apparatus for supporting a discontinuous reception (DRX) operation in a Node B in a mobile communication system are provided. The method includes defining a second System Frame Number (SFN) where one cycle of a first SFN corresponds to one bit, transmitting information on the second SFN to a User Equipment (UE), determining a second SFN which is used to transmit a paging signal to the UE, determining a first SFN which is used to transmit the paging signal in the determined second SFN, and transmitting the paging signal to the UE at the determined first SFN.