Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and a display device. Since a wavy structure is formed through heat treatment in a structure in which a first buffer layer made of an organic material, a second buffer layer made of a metal oxide and a third buffer layer made of an inorganic material are stacked, it is possible to provide a display device including an array substrate which has stretchable characteristics through the wavy structure while preventing a crack from occurring in the third buffer layer and preventing characteristics of thin film transistors disposed on the third buffer layer from degrading.

Abstract: A method for manufacturing a tellurium-based semiconductor device comprises the steps of: preparing a substrate; depositing, on the substrate, a tellurium-based semiconductor material including tellurium and a tellurium oxide so as to form a tellurium-based semiconductor layer; and forming a passivation layer on the tellurium-based semiconductor layer. According to the manufacturing method, heat treatment at a high temperature or cryogenic conditions are not required, and thus, it is possible to manufacture a semiconductor device through a practical process. In addition, since the crystallinity of the tellurium-based semiconductor layer is improved during the manufacturing process, it is possible to provide a p-type semiconductor device having excellent electrical characteristics such as electric field mobility and a current blink ratio.

Abstract: Tellurium oxide and a thin film transistor comprising the same as a channel layer are provided. The tellurium oxide is a metal oxide including tellurium, wherein a portion of the tellurium is in a Te0 state having a zero oxidation number, and another portion of the tellurium is in a Te4+ ' state having a tetravalent oxidation number.

Abstract: A system and a method minimize power consumption, signalling overhead, and processing load in blind scheduling in a mobile communication system. A User Equipment (UE) detects a type of an uplink (UL) grant while it is periodically allocated the UL grant. If there is no data to transmit using the UL grant, the UE determines whether to transmit a padding Medium Access Control (MAC) Protocol Data Unit (PDU) to an Evolved Universal Terrestrial Radio Access Network (E-UTRAN) Node B (eNB) using the UL grant according to the type of the UL grant.

Abstract: The present invention relates to a method and apparatus for efficiently controlling access for system load adjustment in mobile communication systems. A method for transmitting and receiving data by a terminal including a user equipment (UE) non access stratum (NAS) and a UE access stratum (AS) includes the steps of: receiving by the UE AE, information including emergency call-related information which includes barring information by type for the emergency call, from a base station; transmitting, by the UE NAS, a service request for the emergency call to the UE AS; and determining, by the UE AS, whether to bar the service request on the basis of emergency call-related information. During an emergency call transmission, network congestion can be easily controlled by enabling various types of emergency calls to be transmitted, and enabling access to be barred information according to the situation of a communication network and types of emergency calls.

Abstract: The present disclosure relates to converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT), and may be applied to intelligent services, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method according to disclosed aspects includes receiving a first control message including a first random access response window for a first cell group, receiving a second control message for adding a second cell group, including information on a second random access response window size for the second cell group, transmitting, on a cell of the second cell group, a random access preamble, and monitoring, on the cell of the second cell group, a random access response based on the second random access response window size for the second cell group.

Abstract: A lithium secondary battery has excellent economic feasibility and safety because an iron phosphate of Formula 2 having an olivine structure is included as a positive electrode active material, and also has advantages of excellent battery performance and lifespan because an electrolyte additive of Formula 1 having a specific molecular weight is included in an electrolyte to improve an increase in internal resistance of the battery during charging and discharging and effectively prevent iron ions from being exsolved from the positive electrode active material, wherein R1to R5, p, q, r, m and n are described herein.

Abstract: The present technology relates to a lithium secondary battery. The lithium secondary battery has advantages of excellent high-rate discharge characteristics at room temperature as well as excellent discharge efficiency at low temperature when a coating layer containing specific contents of a lithium element, a sulfur element, and a nitrogen element is provided on a positive electrode mixture layer including a positive electrode active material.

Abstract: A lithium secondary battery includes Li6CoO4 containing excess lithium, or the like as an irreversible additive in a positive electrode, and at the same time, includes an electrolyte additive of Formula 1 having a specific molecular weight in an electrolyte to realize low battery resistance and effectively prevent metal ions from being exsolved from the irreversible additive, and thus has advantages of excellent battery performance and lifespan, wherein R1 to R5, p, q, r, m and n are described herein.

Abstract: A thin-film transistor comprises a substrate; an insulating layer formed on the substrate; an active layer formed on the insulating layer; and source and drain electrode layers formed on the active layer so as to be spaced from each other, wherein the active layer comprises: a first oxide semiconductor layer consisting of In, Ga and O; and a second oxide semiconductor layer which is formed on the first oxide semiconductor layer and which consists of Zn and O. The thin-film transistor having metal oxide semiconductor layers of a heterojunction structure has greatly improved electron mobility by comprising, as an active layer, oxide semiconductor layers of a heterojunction structure. In addition, the physical properties of a thin-film transistor to be manufactured can be controlled by adjusting the composition and thickness of oxide semiconductor layers through an atomic layer deposition (ALD) process.

Abstract: The present invention relates to a method and an apparatus for logging a radio resource control (RRC) failure of user equipment (UE) and receiving the log. According to one embodiment of the present invention, a method for logging an RRC failure of UE may comprise the steps of: attempting random access; if the failure of random access is sensed, logging information on the failure; and if the success of random access is sensed, transmitting information on the failure logged before the success to a connected base station. According to one embodiment of the present invention, an apparatus and a method which effectively log a channel state or a connection failure can be provided.

Abstract: A thin-film transistor includes a gate electrode, and an active layer insulated from the gate electrode by a gate insulating layer, and the active layer includes a quasi-superlattice structure with a first oxide semiconductor material and a second oxide semiconductor material having a larger bandgap than the first oxide semiconductor material alternately stacked at least twice. A display apparatus includes a thin-film transistor including an active layer of a quasi-superlattice structure for each pixel.

Abstract: An electrolyte composition and a lithium secondary battery including the same are disclose herein. The electrolyte composition has improved high temperature safety. In some embodiments, the electrolyte composition includes an additive including a compound represented by Formula 1. Each R1 is independently a single bond, an alkylene group having 1 to 10 carbon atoms, or each R2 is independently a double or triple bond including 2 carbon atoms, each R3 is independently hydrogen or an alkyl group having 1 to 4 carbon atoms, and a is an integer of 1 to 10. The additive may reinforce an SEI layer on the surface of an electrode, thereby having advantages of improved storage and lifetime characteristics at a high temperature and a decreased amount of gas generated in the battery.

Abstract: An electronic device includes; an intellectual property (IP) block, a thermal management unit (TMU) that detects a temperature associated with the IP block to generate a detected temperature, a clock management unit (CMU) that generates an operating clock and provides the operating clock to the IP block, a clock generator that controls operation of the CMU in generating the operating clock, a power management unit (PMU) that generates a supply voltage provided to the CMU, and a dynamic voltage frequency scaling (DVFS) block.

Abstract: The present disclosure relates to converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT), and may be applied to intelligent services, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method according to disclosed aspects includes receiving a first control message including a first random access response window for a first cell group, receiving a second control message for adding a second cell group, including information on a second random access response window size for the second cell group, transmitting, on a cell of the second cell group, a random access preamble, and monitoring, on the cell of the second cell group, a random access response based on the second random access response window size for the second cell group.

Abstract: The present invention relates to a method and apparatus for efficiently controlling access for system load adjustment in mobile communication systems. A method for transmitting and receiving data by a terminal including a user equipment (UE) non access stratum (NAS) and a UE access stratum (AS) includes the steps of: receiving by the UE AE, information including emergency call-related information which includes barring information by type for the emergency call, from a base station; transmitting, by the UE NAS, a service request for the emergency call to the UE AS; and determining, by the UE AS, whether to bar the service request on the basis of emergency call-related information. During an emergency call transmission, network congestion can be easily controlled by enabling various types of emergency calls to be transmitted, and enabling access to be barred information according to the situation of a communication network and types of emergency calls.

Abstract: An additive for a non-aqueous electrolyte, a non-aqueous electrolyte including the same, and a lithium secondary battery including the same are disclosed herein. The additive includes an ionic compound to form a coating film on an electrode surface, thereby preventing gas generation at high temperature, a cell open-circuit voltage (OCV) drop, and a decrease in capacity retention rate, which are caused by elution of metal ions from an electrode. The additive improves durability, performance, and high temperature safety of the battery.

Abstract: An apparatus, circuit, and method for controlling a service access in a packet data communication system are provided. The method includes broadcasting information related to whether a service access to a specific service is possible.

Abstract: A method for reporting performance of a terminal in a mobile communication system includes the steps of receiving a request for performance reporting from a base station, determining an indicator of whether a delay time related operation that the terminal supports is in correspondence with the request which corresponds to a pre-set condition, and transmitting a message including the determined indicator to the base station. The size of the performance reporting message may be minimized in reporting the performance of the terminal.

Abstract: A crystalline IZTO oxide semiconductor and a thin film transistor having the same are provided. The thin film transistor includes a gate electrode, a crystalline In—Zn—Sn oxide (IZTO) channel layer overlapping the upper or lower portions of the gate electrode and having hexagonal crystal grains, and a gate insulating layer disposed between the gate electrode and the IZTO channel layer, and source and drain electrodes respectively connected to both ends of the IZTO channel layer.