Patents by Inventor Kyoung Ik Cho
Kyoung Ik Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150171354Abstract: Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.Type: ApplicationFiled: May 17, 2014Publication date: June 18, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Seok LEE, Kyoung Ik CHO, Bock Soon NA, Sang Chul LIM, Chan Woo PARK, Soon-Won JUNG, Jae Bon KOO, Hye Yong CHU
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Publication number: 20150159266Abstract: Provided is a method of manufacturing a flexible substrate allowing an electronic device to be mounted thereto. The method of manufacturing a flexible substrate allowing an electronic device to be mountable thereto, includes preparing a substrate, applying a force to the substrate to stretch the substrate in horizontal direction, performing a surface treatment process on the substrate and forming a first region having a plurality of wavy surfaces, and forming an electrode on the first region.Type: ApplicationFiled: May 20, 2014Publication date: June 11, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Chul LIM, Jae Bon KOO, Chan Woo PARK, Soon-Won JUNG, Bock Soon NA, Sang Seok LEE, Kyoung Ik CHO, Hye Yong CHU
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Patent number: 9044964Abstract: A micro ballpoint pen enabling to print directly straight, oblique, curved, dashed, broken and wavy lines and a printing apparatus including the same. The micro ballpoint pen may include a tip body including a caulking portion, at least one inner protrusion, and at least one expansible or shrinkable elastic portion, a ball provided between the caulking portion and the inner protrusion, the ball contacting and rolling on a target printing object to eject ink onto the target printing object, a supporting bar pressing the ball toward the caulking portion to form an ink outflowing channel between the caulking portion and the ball, and a control part expanding or shrinking the elastic portion to control the ink outflowing channel.Type: GrantFiled: September 6, 2012Date of Patent: June 2, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: SangChul Lim, Yong Suk Yang, Seongdeok Ahn, Kyoung Ik Cho
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Publication number: 20150147854Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.Type: ApplicationFiled: April 22, 2014Publication date: May 28, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Soon-Won JUNG, Jae Bon KOO, Chan Woo PARK, Bock Soon NA, Sang Chul LIM, Sang Seok LEE, Kyoung Ik CHO, Hye Yong CHU
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Patent number: 8653631Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.Type: GrantFiled: February 25, 2013Date of Patent: February 18, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Jae Bon Koo, Jong-Hyun Ahn, Seung Youl Kang, Hasan Musarrat, In-Kyu You, Kyoung Ik Cho
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Publication number: 20130341610Abstract: Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes.Type: ApplicationFiled: August 23, 2013Publication date: December 26, 2013Inventors: Hye Yong CHU, Jeong Ik Lee, Jong Hee Lee, Kyoung Ik Cho
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Patent number: 8584743Abstract: Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers.Type: GrantFiled: April 22, 2010Date of Patent: November 19, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Seok-Hwan Moon, Seung Youl Kang, Kyoung Ik Cho, Moo Jung Chu
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Patent number: 8546198Abstract: A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.Type: GrantFiled: March 11, 2013Date of Patent: October 1, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Min Ki Ryu, Chi Sun Hwang, Chun Won Byun, Hye Yong Chu, Kyoung Ik Cho
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Patent number: 8546199Abstract: A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.Type: GrantFiled: March 11, 2013Date of Patent: October 1, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Min Ki Ryu, Chi Sun Hwang, Chun Won Byun, Hye Yong Chu, Kyoung Ik Cho
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Patent number: 8493768Abstract: Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.Type: GrantFiled: November 21, 2011Date of Patent: July 23, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chunwon Byun, ByeongHoon Kim, Sung Min Yoon, Shinhyuk Yang, Min Ki Ryu, Chi-Sun Hwang, Sang-Hee Park, Kyoung Ik Cho
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Patent number: 8476106Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.Type: GrantFiled: May 11, 2012Date of Patent: July 2, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Min Yoon, Shin Hyuk Yang, Soon Won Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
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Publication number: 20130141398Abstract: A device for measuring a writing pressure of electronic pen using a change of capacitance is disclosed. The device for measuring a writing pressure of electronic pen may include first and second fixed plates; a moving plate which constitutes a capacitive sensor together with the first and second fixed plates and moves between the first and second fixed plates according to a change of writing pressure; a tip which adheres to the moving plate to generate a writing pressure; and an elastic body restoring the moving plate to an original location when the moving plate moves from between the first and second fixed plates in a first direction.Type: ApplicationFiled: June 28, 2012Publication date: June 6, 2013Applicant: Electronics and Telecommunications Research InstituteInventors: Kyoung Ik CHO, Sang Seok Lee, Seongdeok Ahn
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Publication number: 20130119468Abstract: A thin-film transistor may include a drain electrode, a source electrode, an active layer, a gate electrode, and a gate insulating layer. In a vertical sectional view, the gate insulating layer may be disposed between the active layer and the gate electrode to include a first inorganic layer, an organic layer, and a second inorganic layer sequentially stacked. According to a method of fabricating the thin-film transistor, the gate insulating layer may be formed between the steps of forming the active layer and the second electrode layer or between the steps of forming the first electrode layer and the second electrode layer.Type: ApplicationFiled: June 22, 2012Publication date: May 16, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sang Chul LIM, Jiyoung OH, Seung Youl KANG, Hee-ok KIM, Kyoung Ik CHO, Seongdeok AHN
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Patent number: 8421610Abstract: Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.Type: GrantFiled: August 3, 2009Date of Patent: April 16, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Seongdeok Ahn, In-Kyu You, Jiyoung Oh, Chul Am Kim, Jae Bon Koo, Sang Seok Lee, Kyung Soo Suh, Kyoung Ik Cho
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Publication number: 20130081570Abstract: Provided are a micro ballpoint pen enabling to print directly straight, oblique, curved, dashed, broken and wavy lines and a printing apparatus including the same. The micro ballpoint pen may include a tip body including a caulking portion, at least one inner protrusion, and at least one expansible or shrinkable elastic portion, a ball provided between the caulking portion and the inner protrusion, the ball contacting and rolling on a target printing object to eject ink onto the target printing object, a supporting bar pressing the ball toward the caulking portion to form an ink outflowing channel between the caulking portion and the ball, and a control part expanding or shrinking the elastic portion to control the ink outflowing channel.Type: ApplicationFiled: September 6, 2012Publication date: April 4, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: SangChul LIM, Yong Suk Yang, Seongdeok Ahn, Kyoung Ik Cho
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Patent number: 8409935Abstract: A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.Type: GrantFiled: August 21, 2012Date of Patent: April 2, 2013Assignee: Electronics and Telcommunications Research InstituteInventors: Min Ki Ryu, Chi Sun Hwang, Chun Won Byun, Hye Yong Chu, Kyoung Ik Cho
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Patent number: 8404532Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.Type: GrantFiled: May 18, 2010Date of Patent: March 26, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Jae Bon Koo, Jong-Hyun Ahn, Seung Youl Kang, Hasan Musarrat, In-Kyu You, Kyoung Ik Cho
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Patent number: 8378421Abstract: A thin film transistor substrate. The thin film transistor substrate includes a substrate, an adhesive layer on the substrate, and a semiconductor layer having a first doped region, a second doped region and a channel region on the adhesive layer. The thin film transistor substrate further includes a first dielectric layer on the semiconductor layer, a gate electrode overlapping the channel region, a second dielectric layer on the first dielectric layer and the gate electrode, a source electrode disposed on the second insulating layer, and a drain electrode spaced apart from the source electrode on the source electrode. The channel region is disposed between the first doped region and the second doped region, and has a transmittance higher than those of the first doped region and the second doped region.Type: GrantFiled: January 13, 2012Date of Patent: February 19, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Jae Bon Koo, In-Kyu You, Seongdeok Ahn, Kyoung Ik Cho
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Publication number: 20120315729Abstract: A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.Type: ApplicationFiled: August 21, 2012Publication date: December 13, 2012Applicant: Electronics and Telecommunications Research InstituteInventors: Min Ki RYU, Chi Sun Hwang, Chun Won Byun, Hye Yong Chu, Kyoung Ik Cho
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Patent number: 8269220Abstract: Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.Type: GrantFiled: September 4, 2009Date of Patent: September 18, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Min Ki Ryu, Chi Sun Hwang, Chun Won Byun, Hye Yong Chu, Kyoung Ik Cho