Abstract: A data processing device includes a first decoder suitable for performing normal or fast decoding for a plurality of data chunks, wherein the first decoder performs the normal decoding for a first data chunk among the plurality of data chunks, and performs the normal decoding or the fast decoding for a second data chunk among the plurality of data chunks, based on a result of the normal decoding for the first data chunk.

Abstract: An embedded multimedia card (eMMC) is provided. The eMMC includes a clock channel receiving a clock output from a host, data channels receiving data signals from the host, and a command channel receiving a SWITCH command including delay offset values from the host so as to adjust a delay of at least one of the data signals, which are received, in response to the delay offset values.

Abstract: A data processing device includes a first decoder suitable for performing normal or fast decoding for a plurality of data chunks, wherein the first decoder performs the normal decoding for a first data chunk among the plurality of data chunks, and performs the normal decoding or the fast decoding for a second data chunk among the plurality of data chunks, based on a result of the normal decoding for the first data chunk.

Abstract: A data processing circuit includes a plurality of transformation blocks suitable for respectively transforming in parallel a plurality of input bit groups into a plurality of output bit groups, wherein each of the transformation blocks transforms a corresponding input bit group into a corresponding output bit group by using a random pattern.

Abstract: A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.

Abstract: A method of operating a data compression device includes analyzing data using an analyzer and generating a result of the analysis, while the data is buffered by an input buffer, and selectively compressing the buffered data according to the result of the analysis. A data compression device includes a data pattern analyzer configured to analyze data transmitted to an input buffer, and generate an analysis code based on the analysis of the data; and a data compression manager configured to selectively compress the data in the input buffer based on the analysis code.

Abstract: A method of determining a read voltage of a memory device includes performing a plurality of read operations with respective different read voltages on a first group of storage regions of the memory device using a first error correction rate, wherein the plurality of read operations are performed to distinguish between a pair of adjacent logic states of memory cells in the first group of storage regions, detecting a read voltage level, among the different read voltages, at which a minimum number of erroneous bits is generated in the at least one read operation, and determining a read voltage for a second group of storage regions to which a second error correction rate is applied, based on the detected read voltage level, wherein the first error correction rate is higher than the second error correction rate.

Abstract: An embedded multimedia card (eMMC) includes a clock channel receiving a clock from a host, a complementary clock channel receiving a complementary clock from the host, a command/response channel exchanging commands/responses with the host, a plurality of data channels exchanging data between the host and the eMMC, a return clock channel sending a return clock to the host synchronously with data, a complementary return clock channel sending a complementary return clock to the host, and a reference voltage channel that either receives a reference voltage from the host or communicates a reference voltage to the host.

Abstract: A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.

Abstract: A memory system including a non-volatile memory device and a memory controller is provided. When a read operation on a first data initially output from the non-volatile memory device during a first read operation is successful, the memory controller may change a read voltage for reading a second data stored in the non-volatile memory device during a second read operation.

Abstract: Memory devices and/or methods of managing memory data errors are provided. A memory device detects and corrects an error bit of data read from a plurality of memory cells, and identifies a memory cell storing the detected error bit. The memory device assigns a verification voltage to each of the plurality of first memory cells, the assigned verification voltage corresponding to the corrected bit for the identified memory cell, the assigned verification voltage corresponding to the read data for the remaining memory cells. The memory device readjusts the data stored in the plurality of memory cells using the assigned verification voltage. Through this, it is possible to increase a retention period of the data of the memory device.

Abstract: A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.

Abstract: A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.

Abstract: A method of operating a memory controller, a memory controller, a memory device and a memory system are provided. The method includes reading first data from a nonvolatile memory device using a first read voltage, the first data includes a uncorrectable error bit, reading second data from a nonvolatile memory device using a second read voltage different from the first read voltage, the second data includes an correctable error bit, and reprogramming the nonvolatile memory device according to the comparison result of the first read voltage and the second read voltage.

Abstract: A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.

Abstract: A data storage device includes a non-volatile memory device including a plurality of memory cells and a memory controller. The memory controller is configured to modify an arrangement of program data and to program the modified program data into the plurality of memory cells. The memory controller modifies the program data to eliminate a given data pattern causing physical interference between adjacent memory cells from the modified program data.

Abstract: A non-volatile semiconductor memory device and related method of determining a read voltage are disclosed. The non-volatile semiconductor memory device includes; a memory cell array including a plurality of memory cells, a read voltage determination unit configured to determine an optimal read voltage by comparing reference data obtained during a program operation with comparative data obtained during a subsequent read operation and changing a current read voltage to a new read voltage based on a result of the comparison, and a read voltage generation unit configured to generate the new read voltage in response to a read voltage control signal provided by the read voltage determination unit.

Abstract: A method of operating a data compression device includes analyzing data using an analyzer and generating a result of the analysis, while the data is buffered by an input buffer, and selectively compressing the buffered data according to the result of the analysis. A data compression device includes a data pattern analyzer configured to analyze data transmitted to an input buffer, and generate an analysis code based on the analysis of the data; and a data compression manager configured to selectively compress the data in the input buffer based on the analysis code.

Abstract: A method of storing data in a storage media can include determining whether a size of data to be stored in the storage media satisfies a reference condition and compressing the data to provide compressed data for storage in the storage media upon determining that the size satisfies a reference condition.

Abstract: A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.