Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.

Abstract: The present invention relates to a positive type photosensitive resin composition and an organic light emitting device black bank comprising the same, and more particularly, an organic light emitting device black bank comprising the photosensitive resin composition according to the exemplary embodiment of the present invention may further have a function of a black matrix without an additional process, such that it is possible to simplify a manufacturing process of the organic light emitting device and largely improve visibility.

Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.

Abstract: A light emitting apparatus including a first light emitting device including a first light emitting diode chip configured to emit light of a first rank included in a first color gamut, and a second light emitting device including a second light emitting diode chip configured to emit light of a second rank included in the first color gamut, in which the first rank is different than the second rank. In addition, the first and second light emitting devices are arranged in relation to each other such that the light emitted by the first emitting device mixes with light emitted by the second light emitting device to form light of a third rank different than the first and second ranks.

Abstract: The present invention relates to a catalyst for reductive amination-reaction, and uses thereof. The catalyst according to the present invention can show high amine conversion rate because it can maintain the catalytic activity even in the presence of moisture especially while maintaining the balance of dehydrogenation and hydrogenation reaction basically. Accordingly, the catalyst can be usefully used for preparing a polyetheramine compound through reductive amination-reaction not only in a continuous preparation process but also in a batch preparation process, irrespective of the existence of moisture.

Abstract: Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resin layer on the light emitting diode, and a primer layer containing a metal material on the resin layer.

Abstract: The present invention relates to insulating material for an electronic device that may inhibit damage to an electronic device due to a high temperature curing process, and simultaneously exhibit excellent properties and reliability. The insulating material for an electronic device comprises soluble polyimide resin comprising a specific repeat unit, exhibits imidization degree of 70% or more after curing at a temperature of 250° C., and comprises a low boiling point solvent having boiling point of 130 to 180° C. as a residual solvent.

Abstract: The present application relates to a liquid crystal cell, a method for preparing a liquid crystal cell and a display device. An exemplary liquid crystal cell may be applied to various types of display devices so as to control a viewing angle or light transmittance of the display device.

Abstract: The present application relates to a liquid crystal cell, a method for preparing a liquid crystal cell and a display device. An exemplary liquid crystal cell may be applied to various types of display devices so as to control a viewing angle or light transmittance of the display device.

Abstract: The present invention relates to insulating material for an electronic device that may inhibit damage to electronic devices by a high temperature curing process, and simultaneously contribute to improvement in reliability of electronic devices. The insulating material for an electronic device comprises soluble polyimide resin comprising a specific repeat unit, and a residual solvent comprising a low boiling point solvent having boiling point of 130 to 180° C., wherein after curing at a temperature of 250° C. or less, the amount of outgassing is 4 ppm or less based on total weight of the soluble polyimide resin, and the amount of outgassing derived from water or alcohol is less than 0.1 ppm.

Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.

Abstract: Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 ? to about 300 ?.

Abstract: The present invention relates to a catalyst for reductive amination-reaction, and uses thereof. The catalyst according to the present invention can show high amine conversion rate because it can maintain the catalytic activity even in the presence of moisture especially while maintaining the balance of dehydrogenation and hydrogenation reaction basically. Accordingly, the catalyst can be usefully used for preparing a polyetheramine compound through reductive amination-reaction not only in a continuous preparation process but also in a batch preparation process, irrespective of the existence of moisture.

Abstract: The present invention relates to a positive photosensitive polyimide composition that includes polyimide, a polyamic acid, and a photoactive compound. An organic insulating layer for organic light-emitting devices (OLED), which includes the positive photosensitive polyimide composition, may control a taper angle and outgassing, and has excellent adhesion in respects to a substrate, water repellent control ability, and storage stability and the like.

Abstract: A wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer, removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer.

Abstract: A semiconductor light emitting device includes a first and second conductive semiconductor layers including an n-type dopant on active layer; a third and fourth conductive semiconductor layers including a p-type dopant under the active layer; wherein the first to fourth conductive semiconductor layers are formed of an AlGaN-based semiconductor, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers, wherein the plurality of quantum well layers include an InGaN semiconductor layer, wherein the plurality of quantum barrier layers include an AlGaN-based semiconductor layer, wherein at least two of the plurality barrier layers have a thickness of about 50 ? to about 300 ?, respectively, wherein a cycle of the quantum barrier layer and the quantum well layer includes a cycle of 2 to 10, wherein the second conductive semiconductor layer has a thickness thinner than a thickness of the third conductive semiconductor layer.

Abstract: The present invention relates to an aqueous alkali-developable photosensitive polyimide precursor resin composition that is appropriate for highly heat-resistant transparent protection layers and insulation layers for liquid crystal display devices.

Abstract: A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.

Abstract: A semiconductor light emitting device includes a first and second conductive semiconductor layers including an n-type dopant on active layer; a third and fourth conductive semiconductor layers including a p-type dopant under the active layer; wherein the first to fourth conductive semiconductor layers are formed of an AlGaN-based semiconductor, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers, wherein the plurality of quantum well layers include an InGaN semiconductor layer, wherein the plurality of quantum barrier layers include an AlGaN-based semiconductor layer, wherein at least two of the plurality barrier layers have a thickness of about 50 ? to about 300 ?, respectively, wherein a cycle of the quantum barrier layer and the quantum well layer includes a cycle of 2 to 10, wherein the second conductive semiconductor layer has a thickness thinner than a thickness of the third conductive semiconductor layer.