Abstract: A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the third semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers having a material different from the quantum barrier layers, wherein the plurality of quantum well layers include an AlGaN based semiconductor layer, wherein the plurality of quantum barrier layers has a larger band gap energy than that of the quantum well layers.

Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other.

Abstract: A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer.

Abstract: A liquid crystal cell, a precursor of the liquid crystal layer, a method of manufacturing a liquid crystal cell, and use of the liquid crystal cell are provided. The liquid crystal cell may be manufactured simply in a consecutive manner using a roll-to-roll process. Also, the liquid crystal cell may be realized as a flexible device, and have an excellent contrast ratio. Such a liquid crystal cell can be applied in various applications including smart windows, window-protecting films, flexible display devices, active retarders for displaying 3D images, or viewing angle-adjusting films.

Abstract: The present invention relates to a positive type photosensitive resin composition and an organic light emitting device black bank comprising the same, and more particularly, an organic light emitting device black bank comprising the photosensitive resin composition according to the exemplary embodiment of the present invention may further have a function of a black matrix without an additional process, such that it is possible to simplify a manufacturing process of the organic light emitting device and largely improve visibility.

Abstract: The present invention relates to polyimide or precursor thereof represented by Chemical Formula 1 or 2 and a photosensitive resin composition including the same. The polyimide or precursor thereof are fabricated using diamine comprising polyalkyleneoxide. The photosensitive resin composition of the present invention has excellent light transmissivity, an excellent resolution, and excellent photo sensitivity and image forming performance. Further, the photosensitive resin composition has high adhesiveness with substrates, such as a silicon film, a silicon oxide film, and a metal film. In particular, an excellent film without failure, such as crack, can be formed.

Abstract: A light emitting device including a second metal layer, a second conduction type semiconductor layer on the second metal layer, an active layer on the second conduction type semiconductor layer, a first conduction type semiconductor layer on the active layer, a first metal layer on the first conduction type semiconductor layer, an insulating layer being disposed on a peripheral portion of an upper surface of the second metal layer and being disposed under a lower surface of the second conduction type semiconductor layer, and a passivation layer on lateral surfaces of the insulating layer, the second conduction type semiconductor layer, the active layer and the first conduction type semiconductor layer, the passivation layer being on an upper surface of the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer.

Abstract: A method of manufacturing a bathtub includes a first operation of forming an external structure layer forming an external appearance of the bathtub; a second operation of forming a mold-release agent layer having a bathtub forming surface corresponding to an internal shape of the bathtub and a flange extending from a circumference of the bathtub forming surface to the outside, on an external surface of an internal mold; and a third operation of forming a semi-rigid foam layer having a first unfoaming painted layer, a soft foam layer, and a second unfoaming painted layer in sequence such that the soft foam layer is sandwiched between the first unfoaming painted layer and the second unfoaming painted layer. The semi-rigid foam layer is formed between the external structure layer and the mold-release agent layer by being injected in a space between the external structure layer and the mold-release agent layer.

Abstract: The present invention relates to an aqueous alkali-developable photosensitive polyimide precursor resin composition that is appropriate for highly heat-resistant transparent protection layers and insulation layers for liquid crystal display devices.

Abstract: A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.

Abstract: A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer.

Abstract: The present invention relates to an aqueous alkali-developable photosensitive polyimide precursor resin composition that is appropriate for highly heat-resistant transparent protection layers and insulation layers for liquid crystal display devices. In more detail, the present invention relates to a negative-type photosensitive transparent polyimide precursor resin composition manufactured in two steps.

Abstract: A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1, 0<Y<1) and the fourth semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1, 0<Y<1).

Abstract: The invention is directed to a method of preparing bathtub with cushion and a bathtub with cushion, and more particularly, a method of preparing bathtub comprising a first operation of forming an external structure layer forming an external appearance of a bathtub; a second operation of forming a mold-release agent layer having a bathtub forming surface corresponding to an internal shape of the bathtub and a flange extending from a circumference of the bathtub forming surface to the outside, on an external surface of an internal mold; and a third operation of forming a semi-rigid foam layer having a soft foam layer and an unfoaming painted layer formed sequentially between the external structure layer and the mold-release agent layer by being injected in a space between the external structure layer and the mold-release layer.

Abstract: Disclosed is a copolymer for liquid crystal alignment having a photoreactive group, a mesogen group, a thermosetting group, and a crosslinking group, a liquid crystal aligning layer including the copolymer for liquid crystal alignment, and a liquid crystal display including the liquid crystal aligning layer. Since the liquid crystal aligning layer has excellent thermal stability and no residual image, the liquid crystal aligning layer is usefully applied to the liquid crystal display.

Abstract: In a method for preparing a polyimide resin by reacting diamine and dianhydride, the polyimide resin is polymerized under the presence of a solvent having a boiling point ranging from 130° C. to 180° C. so as to be curable at a low temperature ranging from 150° C. to 250° C. Because the polyimide is curable even at a low temperature, when the polyimide resin is used as an electronic material, damage to equipment due to an otherwise high temperature process can be minimized, and in addition, the polyimide resin can be extensively used as an electronic material such as for a plastic substrate, or the like.

Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other.