Patents by Inventor Lawrence Chung-Lai Lei
Lawrence Chung-Lai Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7860597Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: December 23, 2009Date of Patent: December 28, 2010Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
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Patent number: 7846840Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.Type: GrantFiled: December 22, 2009Date of Patent: December 7, 2010Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung
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Publication number: 20100173439Abstract: A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates.Type: ApplicationFiled: January 3, 2009Publication date: July 8, 2010Inventors: Lawrence Chung-Lai Lei, Alfred Mak, Rex Liu, Kon Park, Tzy-Chung Terry WU, Simon Zhu, Gene Shin, Xiaoming Wang
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Publication number: 20100162954Abstract: In accordance with some embodiments described herein, a process module facility is provided, comprising: at least one process chamber carried in frame, a subfloor adjacent the process module, a stationary pump and electrical box positioned atop the subfloor; and gas control lines and vacuum exhaust lines housed within the subfloor and coupled the process chamber. The process module facility may be integrated with a larger system for processing substrates which includes two or more process module facilities, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates.Type: ApplicationFiled: December 31, 2008Publication date: July 1, 2010Inventors: Lawrence Chung-Lai Lei, Alfred Mak, Rex Liu, Kon Park, Tzy-Chung Terry Wu, Ronald L. Rose
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Publication number: 20100167503Abstract: In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.Type: ApplicationFiled: December 31, 2008Publication date: July 1, 2010Inventors: Lawrence Chung-Lai Lei, Alfred Mak, Rex Liu, Kon Park, Samuel S. Pak, Tzy-Chung Terry Wu, Simon Zhu, Ronald L. Rose, Gene Shin, Xiaoming Wang
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Publication number: 20100162955Abstract: In accordance with some embodiments described herein, a system for processing substrates includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.Type: ApplicationFiled: December 31, 2008Publication date: July 1, 2010Inventors: Lawrence Chung-Lai Lei, Alfred Mak, Rex Liu, Kon Park, Samuel S. Pak, Ying Tsong Loh, Tzy-Chung Terry Wu, Simon Zhu, Roland L. Rose, Gene Shin, Xiaoming Wang
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Patent number: 7722719Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.Type: GrantFiled: March 7, 2005Date of Patent: May 25, 2010Assignee: Applied Materials, Inc.Inventors: Lawrence Chung-Lai Lei, Siqing Lu, Steven E. Gianoulakis, Won B. Bang, David P. Sun, Yen-Kun Victor Wang
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Patent number: 7705275Abstract: A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.Type: GrantFiled: August 17, 2006Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Gwo-chun Tzu, Xiangxiong (John) Yuan, Michael S. Jackson, Hymam Lam
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Publication number: 20100099270Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: ApplicationFiled: December 23, 2009Publication date: April 22, 2010Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
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Publication number: 20100093170Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.Type: ApplicationFiled: December 22, 2009Publication date: April 15, 2010Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung
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Patent number: 7674715Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.Type: GrantFiled: December 16, 2008Date of Patent: March 9, 2010Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Patent number: 7660644Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: June 12, 2006Date of Patent: February 9, 2010Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
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Publication number: 20090156004Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.Type: ApplicationFiled: December 16, 2008Publication date: June 18, 2009Inventors: MORIS KORI, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung
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Publication number: 20090113684Abstract: Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.Type: ApplicationFiled: October 17, 2008Publication date: May 7, 2009Applicant: Applied Materials, Inc.Inventors: Won B. Bang, Yen-Kun Victor Wang, Lawrence Chung-Lai Lei
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Patent number: 7465666Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.Type: GrantFiled: June 21, 2007Date of Patent: December 16, 2008Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Patent number: 7235486Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.Type: GrantFiled: August 29, 2006Date of Patent: June 26, 2007Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Patent number: 7115494Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.Type: GrantFiled: January 24, 2006Date of Patent: October 3, 2006Assignee: Applied Materials, Inc.Inventors: Ashok Sinha, Ming Xi, Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung
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Patent number: 7085616Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: July 27, 2001Date of Patent: August 1, 2006Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
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Patent number: 7033922Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.Type: GrantFiled: September 29, 2004Date of Patent: April 25, 2006Assignee: Applied Materials. Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Publication number: 20060021703Abstract: A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.Type: ApplicationFiled: July 29, 2004Publication date: February 2, 2006Inventors: Salvador Umotoy, Lawrence Chung-Lai Lei, Anh Nguyen, Steve Chiao, Hanh Nguyen