Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

Abstract: A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.

Abstract: Apparatus for processing multiple semiconductor wafers, includes a transfer chamber, a first processing chamber mounted in fixed relation to the transfer chamber and having a first wafer-holding platform with a center, a second processing chamber mounted in adjustable relation to the transfer chamber and to the first chamber and having a second wafer-holding platform with a center, and a robot rotatably mounted within the transfer chamber and having first and second wafer-holding arms spaced parallel to each other for inserting a pair of wafers simultaneously into the first and second chambers and for placing the wafers accurately centered over the respective platforms. The spacing of the platform centers is adjusted relative to the spacing of the robot arms such that the wafers are centered and placed with a preselected degree of accuracy onto the respective platforms for efficient processing of the wafers.

Abstract: In one embodiment of the present inventions, an exhaust outlet in a vacuum processing chamber includes a nonsealing flow restrictor which can facilitate rapid opening and closing of the flow restrictor in some applications. Because the flow restrictor is a nonsealing flow restrictor, the conductance of the flow restrictor in the closed position may not be zero. However, the flow restrictor can restrict the flow of an exhaust gas from the chamber to permit the retention of sufficient processing gas in the chamber to deposit a film on the substrate or otherwise react with the substrate. After a film has been deposited, typically in a thin atomic layer, the exhaust flow restrictor may be opened such that the flow restrictor conductance is significantly increased to a second, higher flow rate to facilitate exhausting residue gas from the chamber. The nonsealing flow restrictor may be closed again to deposit a second layer, typically of a different material onto the substrate.

Abstract: An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.

Abstract: In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.

Abstract: A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.

Abstract: Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source.

Abstract: A lid assembly and a method for ALD is provided. In one aspect, the lid assembly includes a lid plate having an upper and lower surface, a manifold block disposed on the upper surface having one or more cooling channels formed therein, and one or more valves disposed on the manifold block. The lid assembly also includes a distribution plate disposed on the lower surface having a plurality of apertures and one or more openings formed there-through, and at least two isolated flow paths formed within the lid plate, manifold block, and distribution plate. A first flow path of the at least two isolated flow paths is in fluid communication with the one or more openings and a second flow path of the at least two isolated flow paths is in fluid communication with the plurality of apertures.

Abstract: A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

Abstract: Liquid phase material for a semiconductor fabrication process is simultaneously and continuously supplied to a plurality of processing tools from a liquid refill module rather than from a limited-capacity ampoule. A gas panel receives the flow of liquid material from the liquid refill module, and converts the liquid material into the gas phase. The gas panel includes a purge gas inlet and a waste outlet in communication with forelines of the semiconductor processing tools, such that vaporizer, flowmeter, and gas/liquid handling line components of the gas panel can periodically be effectively purged without contaminating other elements of the gas panel.

Abstract: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Abstract: Generally, a substrate processing apparatus is provided. In one aspect of the invention, a substrate processing apparatus is provided. In one embodiment, the substrate processing apparatus includes one or more chamber bodies coupled to a gas distribution system. The chamber bodies define at least a first processing region and a second processing region within the chamber bodies. The gas distribution system includes a first, a second and a third gas supply circuit. The first gas supply circuit is teed between the first and second processing regions and is adapted to supply a first processing gas thereto. The second gas supply circuit is coupled to the first processing region and adapted to supply a second process gas thereto. The third gas supply circuit is coupled to the second processing region and is adapted to supply a third process gas thereto. Alternatively, the processing regions may be disposed in a single chamber body.

Abstract: A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a top ceramic plate having a first side, a bottom ceramic plate having a first side and an embedded electrode, the first side of the bottom plate fused to the first side of the top plate defining a channel therebetween. In another embodiment, a support assembly includes a first plate having a first side and second side. A ring is disposed on the first side. A stepped surface is formed on the first side radially inward of the ring. A second plate is connected to the second side of the first plate.

Abstract: Method and apparatus are provided for accurately placing first and second semiconductor wafers onto a first and a second platforms, respectively, in a single processing chamber despite changes in the exact positions of the platforms caused by variations in temperature within the chamber. A computer controls a mechanism having a pair of wafer-supporting blades to insert the wafers into the chamber. The computer determines from position sensors when the first wafer is centered over the first platform, then actuates lift pins associated with the first platform to lift the first wafer off of its respective blade. Then the computer in the same way in response to other position sensors moves the second wafer into alignment with the second platform, and raises by lift pins the second wafer off of its respective blade. Thereafter the computer removes the blades from the chamber, and lowers the wafers in precise positions onto their respective platforms.

Abstract: Apparatus for processing multiple semiconductor wafers, includes a transfer chamber, a first processing chamber mounted in fixed relation to the transfer chamber and having a first wafer-holding platform with a center, a second processing chamber mounted in adjustable relation to the transfer chamber and to the first chamber and having a second wafer-holding platform with a center, and a robot rotatably mounted within the transfer chamber and having first and second wafer-holding arms spaced parallel to each other for inserting a pair of wafers simultaneously into the first and second chambers and for placing the wafers accurately centered over the respective platforms. The spacing of the platform centers is adjusted relative to the spacing of the robot arms such that the wafers are centered and placed with a preselected degree of accuracy onto the respective platforms for efficient processing of the wafers.

Abstract: An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products.

Abstract: An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products.

Abstract: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.