Abstract: A method for operating a memory is disclosed. The memory includes a first group of word lines, a second group of word lines, a first dummy word line, and a second dummy word line. The first dummy word line and the second dummy word line are between the first group of word lines and the second group of word lines. A first pass voltage is applied to the first dummy word line and applying a second pass voltage to the second dummy word line. A program voltage is applied to a selected word line, wherein a condition is met: a first voltage difference between the first pass voltage and a first threshold voltage of a first dummy cell corresponding to the first dummy word line is different from a second voltage difference between the second pass voltage and a second threshold voltage of a second dummy cell corresponding to the second dummy word line.

Abstract: An article for a gas turbine engine according to an exemplary embodiment of this disclosure, among other possible things includes a substrate and a nickel phosphorous coating disposed on the substrate. The nickel phosphorus coating has a columnar microstructure. A method of applying a coating to an article for a gas turbine engine is also disclosed.

Abstract: Provided herein are compounds of Formula (I): and pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof; wherein X, R1, R1a, R2a, R2b, R2c, R2d, are as defined herein, and Ring HET is a 6-membered monocyclic heteroaryl ring system of Formula: wherein L2, R13, G8, G10, G11, and G12 are as defined herein. Compounds of the present invention are useful for inhibiting CARM1 activity. Methods of using the compounds for treating CARM1-mediated disorders are also described.

Abstract: In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

Abstract: Provided are a device and a method for live detecting a partial discharge of an overhead line in a distribution network and equipment along the line, including: acquiring a second synchronous pulse signal and a first partial discharge signal via a master detection unit; acquiring a first synchronous pulse signal and a second partial discharge signal via a slave detection unit; analyzing the second synchronous pulse signal and the first synchronous pulse signal via a main control computer to obtain time data; and calculating a propagation time based on the time data, synchronously processing the time data based on the propagation time to obtain reference zeros, and calculating a partial discharge location according to the first partial discharge signal and the second partial discharge signal based on the reference zeros.

Abstract: Provided are an interaction method and apparatus, an electronic device, and a storage medium. The method includes displaying a target page, where target content containing a target object is displayed in the target page; receiving a shake trigger operation of a user; and in response to the shake trigger operation, displaying associated content of the target content in a layer above the target page and displaying the detail page of the target object after completing displaying the associated content.

Abstract: An adjustable blade of an impeller built-in electric pump includes a blade body, where the blade body realizes an angle adjustment through a lever regulator structure. The lever regulator structure includes a control shaft arranged at a root of the blade body, the other end of the control shaft is connected to a crank, the other end of the crank is rotatably connected to one end of a connecting rod, the other end of the connecting rod is rotatably connected to an operating frame, and the operating frame is provided with a drive rod configured to drive the operating frame to move. The adjustable blade of the impeller built-in electric pump has the advantages of being compact and simple, low manufacturing cost and low difficulty of installation and maintenance. Moreover, by adjusting the angle of the blade, the vibration during the start-up of the unit can be effectively reduced.

Abstract: The present disclosure provides a degassing membrane tube module and an online gas-in-oil monitoring apparatus for a vacuum on-load tap changer (OLTC). The online gas-in-oil monitoring apparatus includes an online monitoring housing, an oil inlet tube, a gas monitoring device, an oil tank, and an oil diffusing screen, where one end of the oil inlet tube extends through an inner wall at one side of the online monitoring housing; the gas monitoring device is located on a top inner wall of the online monitoring housing; and a front end of the oil inlet tube is provided with the degassing membrane tube module for online preliminary degassing on insulating oil. With the degassing membrane tube module, the online gas-in-oil monitoring apparatus can increase removal rates for gases in the insulating oil within a short time, and can perform degassing on various gases in the insulating oil.

Abstract: Provided herein are compounds of Formula (I): and pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, wherein X, R1, R1a, R2a, R2b, R2c, R2d, are as defined herein, and Ring HET is a 6-membered monocyclic heteroaryl ring system of Formula: wherein L2, R13, G8, G10, G11, and G12 are as defined herein. Compounds of the present invention are useful for inhibiting CARM1 activity. Methods of using the compounds for treating CARM1-mediated disorders are also described.

Abstract: A diffusion barrier coating on a nickel-based alloy substrate comprising the diffusion barrier being coupled to the substrate between the substrate and a abrasive composite material opposite the substrate, wherein the diffusion barrier comprises a nickel cobalt and chromium-aluminum-yttria powder material a high phosphorus nickel-P alloy.

Abstract: When programming and verifying a memory device which includes a plurality of memory cells and a plurality of word lines, a first coarse programming is first performed on a first memory cell among the plurality of memory cells which is controlled by a first word line among the plurality of word lines, and then a second coarse programming is performed on a second memory cell among the plurality of memory cells which is controlled by a second word line among the plurality of word lines. Next, a first coarse verify current is used for determining whether the first memory cell passes a coarse verification and a second coarse verify current is used for determining whether the second memory cell passes a second coarse verification, wherein the second coarse verify current is smaller than the first coarse verify current.

Abstract: When programming and verifying a memory device which includes a plurality of memory cells and a plurality of word lines, a first coarse programming is first performed on a first memory cell among the plurality of memory cells which is controlled by a first word line among the plurality of word lines, and then a second coarse programming is performed on a second memory cell among the plurality of memory cells which is controlled by a second word line among the plurality of word lines. Next, a first coarse verify current is used for determining whether the first memory cell passes a coarse verification and a second coarse verify current is used for determining whether the second memory cell passes a second coarse verification, wherein the second coarse verify current is smaller than the first coarse verify current.

Abstract: Systems, apparatuses, and methods for the recognition and allocation of revenue generated by a subscription based pricing model or plan that is applied to a product or service. Embodiments respond to customer needs for a flexible and powerful revenue allocation engine to permit correct revenue distribution within a subscription economy and effectively trace changes to a revenue schedule and the resulting revenue recognition. Embodiments can efficiently react to changes to a subscription agreement and calculate a new distribution for a revenue schedule and its impact on revenue recognition and future revenue projections. In one embodiment, the systems and methods includes a revenue recognition/allocation engine that operates to evaluate the impact of “charge events” on revenue generation, taking into account relevant business rules and revenue recognition principles.

Abstract: A method for operating a memory is disclosed. The memory includes a first group of word lines, a second group of word lines, a first dummy word line, and a second dummy word line. The first dummy word line and the second dummy word line are between the first group of word lines and the second group of word lines. A first pass voltage is applied to the first dummy word line and applying a second pass voltage to the second dummy word line. A program voltage is applied to a selected word line, wherein a condition is met: a first voltage difference between the first pass voltage and a first threshold voltage of a first dummy cell corresponding to the first dummy word line is different from a second voltage difference between the second pass voltage and a second threshold voltage of a second dummy cell corresponding to the second dummy word line.

Abstract: Embodiments of the present methods and systems are directed to a system and method for managing and editing accounting periods. Particularly, the embodiments are directed to a financial management system that allows for the recordation of financial transactions without first requiring the creation of a user-defined accounting period, and that further allows for the creation, modification, and closure of defined accounting periods.

Abstract: Upon determining that a first read operation on one memory cell of a plurality of memory cells has failed, a second read operation on the memory cell is started. In the second read operation, a second pass voltage is applied to first unselected word lines, and a first pass voltage is applied to second unselected word lines. The first unselected word lines include one or more word lines adjacent to a selected word line, and the second unselected word lines include remaining unselected word lines. The selected word line corresponds to the memory cell to be read. The first pass voltage includes a voltage applied to the first unselected word lines in the first read operation. The second pass voltage is higher than the first pass voltage.

Abstract: A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.

Abstract: A three-dimensional (3D) memory device and method for reading the same are provided. The device includes memory cell strings each including multiple memory cells. In each memory cell string, a topmost memory cell is connected to a top selection gate connected to a bit line, and a bottommost memory cell is connected to a bottom selection gate. The method includes sequentially programming multiple memory cells in a memory cell string according to a programming sequence; in reading a memory cell, applying a corresponding bit line voltage to the memory cell string according to the programming sequence of the memory cell.

Abstract: For Direct Current (DC) bus voltage control, a method generates a q-axis reference current from a DC voltage error that includes a DC voltage input modified by a DC bus voltage in a closed outer loop. The method further generates a d-axis reference current from the DC voltage error, wherein the second-order harmonic in the d-axis reference current is delayed from that in q-axis reference current by 90 degrees. The method generates a q-axis current from the q-axis reference current. The method generates a d-axis current from the d-axis reference current. The second-order harmonic in d-axis current is offset from the second-order harmonic in q-axis current by 90 degrees. The method controls the DC bus voltage of a voltage control plant to mitigate a second-order harmonic in the DC bus voltage with the second-order harmonics in the q-axis current and the d-axis current.

Abstract: A memory includes an upper deck and a lower deck. The upper deck includes a first upper dummy word line. The lower deck includes a first lower dummy word line. A method for reducing program disturbance of the memory includes adjusting a first upper bias voltage applied to the first upper dummy word line and/or a first upper threshold voltage of the first upper dummy word line to adjust a first difference between the first upper bias voltage and the first upper threshold voltage; and adjusting a first lower bias voltage applied to the first lower dummy word line and/or a first lower threshold voltage of the first lower dummy word line to adjust a second difference between the first lower bias voltage and the first lower threshold voltage.