Abstract: Embodiments of the invention relate to a time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a neural network. One embodiment comprises maintaining neuron attributes for multiple neurons and maintaining incoming firing events for different time steps. For each time step, incoming firing events for said time step are integrated in a time-division multiplexing manner. Incoming firing events are integrated based on the neuron attributes maintained. For each time step, the neuron attributes maintained are updated in parallel based on the integrated incoming firing events for said time step.

Abstract: An electronic device is provided. The electronic device includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, circuitry disposed on the dielectric layer that includes interconnected cells, first contact line metallization and second contact line metallization, first power metallization disposed in-plane with or above the circuitry and second power metallization disposed in a trench defined in at least the dielectric layer. The electronic device further includes insulation disposed to insulate the second power metallization from the circuitry and the first power metallization at first locations and to permit electrical communication between the second power metallization, the circuitry and the first power metallization at second locations.

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract: An apparatus for providing on-chip voltage-regulated power includes a switched capacitor voltage conversion circuit that receives an elevated power demand signal and operates at a base rate when the elevated power demand signal is not active and at an elevated rate when the elevated power demand signal is active. The switched capacitor voltage conversion circuit comprises an auxiliary set of transistors that are disabled, when the elevated power demand signal is not active and enabled, when the elevated power demand signal is active. The apparatus may also include a droop detection circuit that monitors a monitored power signal and activates the elevated power demand signal in response to the monitored power signal dropping below a selected voltage level. The monitored power signal may be a voltage input provided by an input power supply for the switched capacitor voltage conversion circuit. A corresponding method is also disclosed herein.

Abstract: An apparatus for storing data includes a latch circuit comprising a first set of transistors that propagate an input signal to an output signal and a second set of transistors that do not propagate the input signal of the latch circuit to the output signal wherein a gate pitch for the first set of transistors is substantially greater than a gate pitch for the second set of transistors. Also disclosed herein, a method for improving circuit performance includes receiving an electronic representation of a plurality of latching circuits associated with a design file and increasing transistor gate pitch for selected transistors of the plurality of latching circuits, wherein the selected transistors comprise transistors that propagate an input signal to an output signal. The method may also include fabricating a chip comprising the plurality of latching circuits. A computer program product corresponding to the method is also disclosed within.

Abstract: A semiconductor wafer is provided, where the semiconductor wafer includes a semiconductor substrate and a hard mask layer formed on the semiconductor substrate. Fins are formed in the semiconductor substrate and the hard mask layer. A spacer is formed on an exposed sidewall of the hard mask layer and the semiconductor substrate. The exposed portion of the semiconductor substrate is etched. A silicon-germanium layer is epitaxially formed on the exposed portions of the semiconductor substrate. An annealed silicon-germanium region is formed by a thermal annealing process within the semiconductor substrate adjacent to the silicon-germanium layer. The silicon-germanium region and the silicon-germanium layer are removed. The hard mask layer and the spacer are removed.

Abstract: Embodiments of the invention relate to a time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a universal substrate of adaptation. One embodiment comprises a neurosynaptic device including a memory device that maintains neuron attributes for multiple neurons. The module further includes multiple bit maps that maintain incoming firing events for different periods of delay and a multi-way processor. The processor includes a memory array that maintains a plurality of synaptic weights. The processor integrates incoming firing events in a time-division multiplexing manner. Incoming firing events are integrated based on the neuron attributes and the synaptic weights maintained.

Abstract: An apparatus for providing on-chip voltage-regulated power includes a switched capacitor voltage conversion circuit that receives an elevated power demand signal and operates at a base rate when the elevated power demand signal is not active and at an elevated rate when the elevated power demand signal is active. The switched capacitor voltage conversion circuit comprises an auxiliary set of transistors that are disabled, when the elevated power demand signal is not active and enabled, when the elevated power demand signal is active. The apparatus may also include a droop detection circuit that monitors a monitored power signal and activates the elevated power demand signal in response to the monitored power signal dropping below a selected voltage level. The monitored power signal may be a voltage input provided by an input power supply for the switched capacitor voltage conversion circuit. A corresponding method is also disclosed herein.

Abstract: An electronic device is provided. The electronic device includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, circuitry disposed on the dielectric layer that includes interconnected cells, first contact line metallization and second contact line metallization, first power metallization disposed in-plane with or above the circuitry and second power metallization disposed in a trench defined in at least the dielectric layer. The electronic device further includes insulation disposed to insulate the second power metallization from the circuitry and the first power metallization at first locations and to permit electrical communication between the second power metallization, the circuitry and the first power metallization at second locations.

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract: An electronic device is provided. The electronic device includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, circuitry disposed on the dielectric layer that includes interconnected cells, first contact line metallization and second contact line metallization, first power metallization disposed in-plane with or above the circuitry and second power metallization disposed in a trench defined in at least the dielectric layer. The electronic device further includes insulation disposed to insulate the second power metallization from the circuitry and the first power metallization at first locations and to permit electrical communication between the second power metallization, the circuitry and the first power metallization at second locations.

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract: Technical solutions are described to accelerate training of a multi-layer convolutional neural network. According to one aspect, a computer implemented method is described. A convolutional layer includes input maps, convolutional kernels, and output maps. The method includes a forward pass, a backward pass, and an update pass that each include convolution calculations. The described method performs the convolutional operations involved in the forward, the backward, and the update passes based on a first, a second, and a third perforation map respectively. The perforation maps are stochastically generated, and distinct from each other. The method further includes interpolating results of the selective convolution operations to obtain remaining results. The method includes iteratively repeating the forward pass, the backward pass, and the update pass until the convolutional neural network is trained. Other aspects such as a system, apparatus, and computer program product are also described.

Abstract: Technical solutions are described to accelerate training of a multi-layer convolutional neural network. According to one aspect, a computer implemented method is described. A convolutional layer includes input maps, convolutional kernels, and output maps. The method includes a forward pass, a backward pass, and an update pass that each include convolution calculations. The described method performs the convolutional operations involved in the forward, the backward, and the update passes based on a first, a second, and a third perforation map respectively. The perforation maps are stochastically generated, and distinct from each other. The method further includes interpolating results of the selective convolution operations to obtain remaining results. The method includes iteratively repeating the forward pass, the backward pass, and the update pass until the convolutional neural network is trained. Other aspects such as a system, apparatus, and computer program product are also described.

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract: An apparatus for providing on-chip voltage-regulated power includes a switched capacitor voltage conversion circuit that receives an elevated power demand signal and operates at a base rate when the elevated power demand signal is not active and at an elevated rate when the elevated power demand signal is active. The switched capacitor voltage conversion circuit comprises an auxiliary set of transistors that are disabled, when the elevated power demand signal is not active and enabled, when the elevated power demand signal is active. The apparatus may also include a droop detection circuit that monitors a monitored power signal and activates the elevated power demand signal in response to the monitored power signal dropping below a selected voltage level. The monitored power signal may be a voltage input provided by an input power supply for the switched capacitor voltage conversion circuit. A corresponding method is also disclosed herein.

Abstract: A silicon-on-insulator substrate which includes a semiconductor substrate, a buried oxide layer, and a semiconductor layer is provided. A hard mask layer is formed over a first region of the silicon-on-insulator substrate. A first silicon-germanium layer is epitaxially grown on the semiconductor layer within a second region of the silicon-on-insulator substrate. The second region is at least a portion of the semiconductor layer not covered by the hard mask layer. A thermal annealing process is performed, such that germanium atoms from the first silicon-germanium layer are migrated to the portion of the semiconductor layer to form a second silicon-germanium layer. The hard mask layer is removed. A layer of semiconductor material is epitaxially grown on top of the semiconductor layer and the second silicon-germanium layer, where the layer of semiconductor material composed of the same material as semiconductor layer.

Abstract: A semiconductor wafer is provided, where the semiconductor wafer includes a semiconductor substrate and a hard mask layer formed on the semiconductor substrate. Fins are formed in the semiconductor substrate and the hard mask layer. A spacer is formed on an exposed sidewall of the hard mask layer and the semiconductor substrate. The exposed portion of the semiconductor substrate is etched. A silicon-germanium layer is epitaxially formed on the exposed portions of the semiconductor substrate. An annealed silicon-germanium region is formed by a thermal annealing process within the semiconductor substrate adjacent to the silicon-germanium layer. The silicon-germanium region and the silicon-germanium layer are removed. The hard mask layer and the spacer are removed.

Abstract: A semiconductor device including a pFET and an nFET where: (i) the gate and conductor channel of the pFET are electrically insulated from a buried oxide layer; and (ii) the conductor channel of the nFET is in the form of a fin extending upwards from, and in electrical contact with, the buried oxide layer. Also, a method of making the pFET by adding a fin structure extending from the top surface of the buried oxide layer, then condensing germanium locally into the lattice structure of the lower portion of the fin structure, and then etching away the lower portion of the fin structure so that it becomes a carrier channel suspended above, and electrically insulated from the buried oxide layer.

Abstract: A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory cell includes a trench capacitor, a non-planar transistor, and a self-aligned silicide interconnect electrically coupling the trench capacitor to the non-planar transistor.