Abstract: A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

Abstract: A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

Abstract: A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

Abstract: A microelectromechanical system microphone structure including a substrate, a first device and at least one second device is provided. The first device is disposed on the substrate and including a first upper electrode and a first lower electrode disposed between the first upper electrode and the substrate. The second device is disposed on the substrate, surrounding the first device and including a second upper electrode and a second lower electrode disposed between the second upper electrode and the substrate. The second upper electrode includes a plurality of first conductive layers and first plugs. The first conductive layers are arranged in steps, and the first plug is disposed between the adjacent first conductive layers. The second lower electrode includes a plurality of second conductive layers and a plurality of second plugs. The second conductive layers are arranged in steps, and the second plug is disposed between the adjacent second conductive layers.

Abstract: An image-sensing module is provided. The image-sensing module includes a substrate, a plurality of image-sensing units, a plurality of micro lenses and a focusing unit. The image-sensing units are disposed on the substrate and the micro lenses are respectively disposed on one of the image-sensing units. The focusing unit is disposed on the substrate and covers the micro lenses. A top surface of the focusing unit is a curved surface. Furthermore, a method of manufacturing the image-sensing module and an image capture apparatus are provided.

Abstract: A diaphragm of an MEMS electroacoustic transducer including a first axis-symmetrical pattern layer is provided. Because the layout of the first axis-symmetrical pattern layer can match the pattern of the sound wave, the vibration uniformity of the diaphragm can be improved.

Abstract: A manufacturing method of a wafer level chip scale package of an image-sensing module is provided. The method includes providing. a wafer having a plurality of die regions, and a plurality of sensing units is formed on a surface of the wafer in each die region. A plurality of lens units is formed on the sensing units, wherein each lens unit includes a lens and an edge wall that are integrally formed. A light-shielding film is also formed on a surface of at least one edge wall of at least one lens units. A dicing process is then performed on the wafer to form a plurality of image sensor chips.

Abstract: An image-sensing module is provided. The image-sensing module includes a substrate, a plurality of image-sensing units, a plurality of micro lenses and a focusing unit. The image-sensing units are disposed on the substrate and the micro lenses are respectively disposed on one of the image-sensing units. The focusing unit is disposed on the substrate and covers the micro lenses. A top surface of the focusing unit is a curved surface. Furthermore, a method of manufacturing the image-sensing module and an image capture apparatus are provided.

Abstract: A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.

Abstract: A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field; therefore the transistor device has a relatively small size.

Abstract: A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.