Abstract: The present invention discloses a super-strong high-conductivity copper alloy and applications thereof as the contact wire materials of high speed railways allowing a speed of over 400 km per hour. The copper alloy comprises niobium, chromium, zirconium, titanium and remaining copper; the copper alloy exists in the form of long bar or wire, wherein niobium is distributed in the copper matrix in the form of nanofibers and solid solution atoms, chromium is distributed around the niobium fibers and the copper matrix in the form of nano-particles and solid solution atoms, zirconium is distributed around the niobium fibers and in the copper matrix in the form of copper-zirconium compound nano-particles and solid solution atoms; titanium is distributed in the copper matrix in the form of copper-titanium GP zone and solid solution atoms; the total amount of niobium, chromium and zirconium solid solution atoms contained in the copper alloy is less than 0.2%.

Abstract: A high-strength and high-conductivity copper alloy and applications of the alloy as a material of a contact line of a high-speed railway allowing a speed higher than 400 kilometers per hour. The copper alloy has the following characteristics: (1) constituents of the copper alloy are in the form of CuXY, X is one or more selected from Ag, Nb and Ta, and Y is one of more selected from Cr, Zr and Si; (2) at a room temperature, the element X in the copper alloy exists in the form of a pure phase and solid solution atoms, the element Y exists in the form of a pure phase and solid solution atoms or a CuY compound and solid solution atoms, the content of the element X existing in the form of the solid solution atoms is lower than 0.5%, and the content of the element Y existing in the form of the solid solution atoms is lower than 0.

Abstract: A package includes a die on a surface of a package component. The package also includes a first die stack on the surface of the package component. The package further includes a first thermal interface material (TIM) having a first thermal conductivity and disposed on the first die stack. In addition, the package includes a second thermal interface material (TIM) having a second thermal conductivity and disposed on the die. The first thermal conductivity of the first TIM is different from the second thermal conductivity of the second TIM.

Abstract: A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.

Abstract: Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.

Abstract: A method of forming a semiconductor package includes dispensing an adhesive on a substrate that has an integrated circuit die attached thereon, placing a lid over the integrated circuit die such that a bottom surface of the lid caps at least a portion of the adhesive, and pressing the lid against the substrate such that a portion of the adhesive is squeezed from a space between the bottom surface of the lid and the substrate onto a sidewall of the lid.

Abstract: A semiconductor package includes a substrate, an integrated circuit die, a lid and an adhesive. The integrated circuit die is disposed over the substrate. The lid is disposed over the substrate. The lid includes a cap portion and a foot portion extending from a bottom surface of the cap portion. The cap portion and the foot portion define a recess, and the integrated circuit die is accommodated in the recess. The adhesive includes a sidewall portion and a bottom portion. The sidewall portion contacts a sidewall of the foot portion. The bottom portion extends from the sidewall portion to between a bottom surface of the foot portion and the substrate.

Abstract: The present invention discloses a super-strong high-conductivity copper alloy and applications thereof as the contact wire materials of high speed railways allowing a speed of over 400 km per hour. The copper alloy comprises niobium, chromium, zirconium, titanium and remaining copper; the copper alloy exists in the form of long bar or wire, wherein niobium is distributed in the copper matrix in the form of nanofibers and solid solution atoms, chromium is distributed around the niobium fibers and the copper matrix in the form of nano-particles and solid solution atoms, zirconium is distributed around the niobium fibers and in the copper matrix in the form of copper-zirconium compound nano-particles and solid solution atoms; titanium is distributed in the copper matrix in the form of copper-titanium GP zone and solid solution atoms; the total amount of niobium, chromium and zirconium solid solution atoms contained in the copper alloy is less than 0.2%.

Abstract: A high-strength and high-conductivity copper alloy and applications of the alloy as a material of a contact line of a high-speed railway allowing a speed higher than 400 kilometers per hour. The copper alloy has the following characteristics: (1) constituents of the copper alloy are in the form of CuXY, X is one or more selected from Ag, Nb and Ta, and Y is one of more selected from Cr, Zr and Si; (2) at a room temperature, the element X in the copper alloy exists in the form of a pure phase and solid solution atoms, the element Y exists in the form of a pure phase and solid solution atoms or a CuY compound and solid solution atoms, the content of the element X existing in the form of the solid solution atoms is lower than 0.5%, and the content of the element Y existing in the form of the solid solution atoms is lower than 0.

Abstract: A packaging structure and a method of forming a packaging structure are provided. The packaging structure, such as an interposer, is formed by optionally bonding two carrier substrates together and simultaneously processing two carrier substrates. The processing includes forming a sacrificial layer over the carrier substrates. Openings are formed in the sacrificial layers and pillars are formed in the openings. Substrates are attached to the sacrificial layer. Redistribution lines may be formed on an opposing side of the substrates and vias may be formed to provide electrical contacts to the pillars. A debond process may be performed to separate the carrier substrates. Integrated circuit dies may be attached to one side of the redistribution lines and the sacrificial layer is removed.

Abstract: Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.

Abstract: A packaging structure and a method of forming a packaging structure are provided. The packaging structure, such as an interposer, is formed by optionally bonding two carrier substrates together and simultaneously processing two carrier substrates. The processing includes forming a sacrificial layer over the carrier substrates. Openings are formed in the sacrificial layers and pillars are formed in the openings. Substrates are attached to the sacrificial layer. Redistribution lines may be formed on an opposing side of the substrates and vias may be formed to provide electrical contacts to the pillars. A debond process may be performed to separate the carrier substrates. Integrated circuit dies may be attached to one side of the redistribution lines and the sacrificial layer is removed.

Abstract: A semiconductor package includes a substrate, an integrated circuit die, a lid and an adhesive. The integrated circuit die is disposed over the substrate. The lid is disposed over the substrate. The lid includes a cap portion and a foot portion extending from a bottom surface of the cap portion. The cap portion and the foot portion define a recess, and the integrated circuit die is accommodated in the recess. The adhesive includes a sidewall portion and a bottom portion. The sidewall portion contacts a sidewall of the foot portion. The bottom portion extends from the sidewall portion to between a bottom surface of the foot portion and the substrate.

Abstract: Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.

Abstract: The invention provides a method for generating an n dimensional vector as a shape descriptor of a model, and corresponding apparatus and shape descriptor. The method comprises: determining a type element of the vector to describe the basic shape of the model; and calculating n?1 metric elements of the vector, each of which represents the percentage of all of a feature of the model falling into one of n?1 layers divided as a function of the type element.

Abstract: This invention relates to clear, semicrystalline, strain induced crystallized polyester films heat laminated onto metal substrates. The films contain at least one polyester which comprises at least of one or more monomers selected from 1,4-cyclohexanedimethanol or 2,2,4,4-tetramethyl-1,3-cyclobutanediol. The articles of the present invention exhibit enhanced mechanical properties useful for the fabrication of thin metal articles such as metal cans.

Abstract: A system for staring a large-scale power load in a micro grid comprises a PCC grid connection switch, a micro grid alternating-current bus, an active power filter (APF), an energy storage inverter, an energy storage battery, a current-limiting resistor R, contactors K1-K3, a time relay KT, a power supply relay board, a micro grid maser control system, a frequency converter rectifying circuit, a frequency converter filter circuit, and a frequency converter inverter circuit. There are the advantages: an output torque of a power load can be effectively improved by using a variable frequency starting apparatus, and a starting current is also small; the provided method can effectively reduce a harmonic current when a variable frequency starting apparatus starts a power load, the phenomenon that two power sources supply power on a direct-current side of the variable frequency starting apparatus at the same time is avoided, thereby improving the stability and the economy of a micro grid.

Abstract: Provided are methods and apparatuses for smoothly transitioning from a first plasma condition to a second plasma condition in a plasma processing chamber. An apparatus for plasma processing may be equipped with an RF power supply coupled to an impedance matching network to smoothly switch from a continuous wave (CW) plasma to a pulsing plasma, reversely, or in alternation without quenching the plasma. Or, the plasma processing chamber may be equipped to smoothly switch from a pulsing plasma at a first duty cycle to a pulsing mode at a second duty cycle without quenching the plasma. Such transitions may occur by ramping RF power, ramping duty cycle, and/or ramping pulsing frequency of the RF power supply being delivered to the plasma processing chamber so that impedance can be smoothly changed and matched by the impedance matching network during the transitions.

Abstract: Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.

Abstract: A system for staring a large-scale power load in a micro grid comprises a PCC grid connection switch, a micro grid alternating-current bus, an active power filter (APF), an energy storage inverter, an energy storage battery, a current-limiting resistor R, contactors K1-K3, a time relay KT, a power supply relay board, a micro grid maser control system, a frequency converter rectifying circuit, a frequency converter filter circuit, and a frequency converter inverter circuit. There are the advantages: an output torque of a power load can be effectively improved by using a variable frequency starting apparatus, and a starting current is also small; the provided method can effectively reduce a harmonic current when a variable frequency starting apparatus starts a power load, the phenomenon that two power sources supply power on a direct-current side of the variable frequency starting apparatus at the same time is avoided, thereby improving the stability and the economy of a micro grid.