Patents by Inventor Lijing Gou
Lijing Gou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8845908Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: GrantFiled: August 24, 2010Date of Patent: September 30, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou
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Patent number: 8815497Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 15, 2013Date of Patent: August 26, 2014Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVillers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Patent number: 8815752Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.Type: GrantFiled: November 28, 2012Date of Patent: August 26, 2014Assignee: Micron Technology, Inc.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue Chen, Anton J. deVilliers
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Patent number: 8797662Abstract: Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.Type: GrantFiled: December 14, 2010Date of Patent: August 5, 2014Assignee: Micron Technology, Inc.Inventors: Yongjun Jeff Hu, Allen McTeer, Lijing Gou
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Publication number: 20140145311Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.Type: ApplicationFiled: November 28, 2012Publication date: May 29, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue Chen, Anton J. deVilliers
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Patent number: 8625078Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.Type: GrantFiled: April 6, 2011Date of Patent: January 7, 2014Assignee: Nanya Technology Corp.Inventors: Jianming Zhou, Scott Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton DeVilliers, Michael Hyatt
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Publication number: 20130323628Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: ApplicationFiled: June 5, 2012Publication date: December 5, 2013Inventors: SCOTT LIGHT, DAN MILLWARD, ANTON DEVILLIERS, YUAN HE, MICHAEL HYATT, LIJING GOU, KAVERI JAIN, ZISHU ZHANG, JIANMING ZHOU
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Publication number: 20130309605Abstract: Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.Type: ApplicationFiled: May 18, 2012Publication date: November 21, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Kaveri Jain, Adam L. Olson, William R. Brown, Lijing Gou, Ho Seop Eom, Anton J. deVilliers
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Publication number: 20130302981Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: ApplicationFiled: July 15, 2013Publication date: November 14, 2013Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVilliers, Jianming Zhou, Yuan He, Michael D. Hyatt, Scott L. Light
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Publication number: 20130252142Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: ApplicationFiled: May 13, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Patent number: 8507191Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.Type: GrantFiled: January 7, 2011Date of Patent: August 13, 2013Assignee: Micron Technology, Inc.Inventors: Dan B. Millward, Yuan He, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Jianming Zhou, Kaveri Jain, Scott Light, Michael Hyatt
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Patent number: 8486611Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 14, 2010Date of Patent: July 16, 2013Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton de Villiers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Patent number: 8440371Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: GrantFiled: January 7, 2011Date of Patent: May 14, 2013Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. DeVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan B. Millward
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Publication number: 20130059255Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: ApplicationFiled: October 24, 2012Publication date: March 7, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Patent number: 8309297Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: GrantFiled: October 5, 2007Date of Patent: November 13, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Publication number: 20120257177Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.Type: ApplicationFiled: April 6, 2011Publication date: October 11, 2012Inventors: JIANMING ZHOU, SCOTT LIGHT, DAN MILLWARD, YUAN HE, KAVERI JAIN, LIJING GOU, ZISHU ZHANG, ANTON DEVILLIERS, MICHAEL HYATT
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Publication number: 20120178026Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: ApplicationFiled: January 7, 2011Publication date: July 12, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. DeVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan B. Millward
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Publication number: 20120177891Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.Type: ApplicationFiled: January 7, 2011Publication date: July 12, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Dan B. Millward, Yuan He, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Jianming Zhou, Kaveri Jain, Scott Light, Michael Hyatt
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Publication number: 20120154919Abstract: Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.Type: ApplicationFiled: December 14, 2010Publication date: June 21, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Yongjun Jeff Hu, Allen McTeer, Lijing Gou
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Patent number: 8163468Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.Type: GrantFiled: March 10, 2008Date of Patent: April 24, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson