Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Abstract: The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: A wafer cassette and a method for placing a wafer are provided. The wafer cassette includes a box body including a plurality of groups of card slots formed on sidewalls of the box body. Each group of the card slots is configured to hold a wafer and includes a wafer input terminal. The wafer cassette also includes a guide device including a plurality of groups of guide slots configured to be docked to the wafer input terminals. Each group of the guide slots and a docking group of the card slots are formed at a same floor.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: The present disclosure relates to VoWLAN call handover solutions. In one embodiment the method comprising: making a voice call through a Wireless Local Area Network (WLAN) under whose coverage the UE is located, with a Packet Data Network (PDN) address obtained from a PDN to which the WLAN is connected; determining that a signal quality of the WLAN is not suitable for the voice call anymore; and sending the PDN address to a base station of a mobile communication network covering the UE, for facilitating a core network node of the mobile communication network to perform voice call handover from WLAN to the mobile communication network. The present disclosure also provides a UE and a core network node for implementing the same.

Abstract: The invention relates to a device and a method to assist with the operation of an instrument by means of said device, the device and the method using leverage effects in order to calculate the data relative to any point of an instrument axis, instead of using low-accuracy sensors. Other improvements are also described that allow higher-quality usage performance for the operator, which reduces the risk of errors and simplifies the operations.

Abstract: Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiNx monolayer at temperatures below about 300° C.

Abstract: A wafer cassette and a method for placing a wafer are provided. The wafer cassette includes a box body including a plurality of groups of card slots formed on sidewalls of the box body. Each group of the card slots is configured to hold a wafer and includes a wafer input terminal. The wafer cassette also includes a guide device including a plurality of groups of guide slots configured to be docked to the wafer input terminals. Each group of the guide slots and a docking group of the card slots are formed at a same floor.

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Abstract: The present disclosure provides methods for forming nanowire spacers for nanowire structures with desired materials in horizontal gate-all-around (hGAA) structures for semiconductor chips. In one example, a method of forming nanowire spaces for nanowire structures on a substrate includes performing a lateral etching process on a substrate having a multi-material layer disposed thereon, wherein the multi-material layer including repeating pairs of a first layer and a second layer, the first and second layers each having a first sidewall and a second sidewall respectively exposed in the multi-material layer, wherein the lateral etching process predominately etches the second layer through the second layer forming a recess in the second layer, filling the recess with a dielectric material, and removing the dielectric layer over filled from the recess.

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Abstract: A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.

Abstract: The present disclosure relates to VoWLAN call handover solutions. In one embodiment the method comprising: making a voice call through a Wireless Local Area Network (WLAN) under whose coverage the UE is located, with a Packet Data Network (PDN) address obtained from a PDN to which the WLAN is connected; determining that a signal quality of the WLAN is not suitable for the voice call anymore; and sending the PDN address to a base station of a mobile communication network covering the UE, for facilitating a core network node of the mobile communication network to perform voice call handover from WLAN to the mobile communication network. The present disclosure also provides a UE and a core network node for implementing the same.

Abstract: A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.

Abstract: A method and a system for implementing a MBMS counting in a wireless communication network environment, wherein a plurality of User Equipments and at least one Radio Network Controller are located in the wireless communication network.

Abstract: A manufacturing method of a circuit board structure includes steps of: providing a circuit board which comprising a metal substrate, a metal layer and a dielectric layer disposed between the metal substrate and the metal layer; forming grooves on the circuit board to expose the metal substrate, the dielectric layer and the metal layer; performing a procedure for connecting metal in the grooves so that the metal substrate and the metal layer being in contact with each other. A structure of circuit board comprises a metal substrate, a dielectric layer and a metal layer. The dielectric layer is formed on the metal substrate, and the metal layer is formed on the dielectric layer; wherein the metal substrate and the metal layer can be in contact with each other at an appropriate position by performing a metal connecting procedure.

Abstract: A method and a system for implementing a MBMS counting in a wireless communication network environment, wherein a plurality of User Equipments and at least one Radio Network Controller are located in the wireless communication network.

Abstract: An exemplary backlight module includes a light guide plate having a light incident surface, an illuminator adjacent to the light incident surface of the light guide plate, and an illuminator holding member coupled to one end of the illuminator. The illuminator holding member includes a first holding hole receiving the end of the illuminator such that the holding member holds the end of the illuminator, and a first buffering cavity between the first holding hole and the light incident surface of the light guide plate. A liquid crystal display including the backlight module is also provided.

Abstract: An exemplary backlight module includes a tray and at least two opposite frame beams. The tray includes two opposite side walls, and the side walls include a plurality of first fixing members. The two frame beams are separate pieces from each other, and include a plurality of second fixing members secured with the first fixing members such that the two frame beams are fixed to the tray. A liquid crystal display including the backlight module is also provided.