Abstract: A method of manufacture of an integrated circuit packaging system includes: attaching a semiconductor die to a die pad of a leadframe; forming a cap layer on top of the semiconductor die for acting as a ground plane or a power plane; and connecting the semiconductor die to the cap layer through a cap bonding wire.

Abstract: A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.

Abstract: An integrated circuit package system includes: mounting a first integrated circuit over a carrier; mounting an interposer, having an opening, over the first integrated circuit and the carrier with the interposer having an overhang over the carrier; connecting an internal interconnect, through the opening, between the carrier and the interposer; and forming an encapsulation over the first integrated circuit, the internal interconnect, and the carrier.

Abstract: A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.

Abstract: An integrated circuit package system including: forming a die pad, wherein the die pad has a tiebar at a corner; forming a lead wherein the lead is connected to the tiebar; connecting an integrated circuit die to the die pad; and forming an encapsulation, having an edge, over the integrated circuit die with the lead extending from and beyond the edge.

Abstract: A packaging system comprising: forming terminal leads; configuring a cavity by partially encapsulating the terminal leads with a compound; attaching an integrated circuit device, a micro-electromechanical system, a micro-mechanical system, or a combination thereof in the cavity; and bonding a cover to the terminal leads for enclosing the cavity.

Abstract: An integrated circuit package system includes: connecting an integrated circuit die and external interconnects; forming an encapsulation over the integrated circuit die and a portion of the external interconnects; and forming an isolation hole between the external interconnects and into a side of the encapsulation exposing the external interconnects.

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: leads and a paddle; a first encapsulant molded between the leads and the paddle, the first encapsulant thinner than the leads; a non-conductive layer over the paddle; and conductive traces directly on the leads, the first encapsulant, and the non-conductive layer.

Abstract: A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a lead frame having a die attach paddle, an isolated pad, and a connector; attaching an integrated circuit die to the die attach paddle and the connector; forming an encapsulation over the integrated circuit die, the connector, the die attach paddle, and the isolated pad; and singulating the connector and the die attach paddle whereby the isolated pads are electrically isolated.

Abstract: A method of manufacture of a wire-on-lead package system includes: providing a die attach paddle with paddle extensions distributed along the periphery of the die attach paddle, providing leadfingers surrounding the die attach paddle, attaching a semiconductor die to the die attach paddle wherein the semiconductor die is larger than the die attach paddle, and connecting bond wires between the semiconductor die and the leadfingers and between the semiconductor die and the paddle extensions.

Abstract: A method of manufacturing a semiconductor package involves providing a substrate having a window. The substrate may include a leadframe having half-etched leads. First and second semiconductor devices are mounted to a top surface of the substrate on either side of the window using an adhesive. A third semiconductor device is mounted to the first and second semiconductor devices using an adhesive. The third semiconductor device is disposed over the window of the substrate. A wirebond or other electrical interconnect is formed between the third semiconductor device and a contact pad formed over a bottom surface of the substrate opposite the top surface of the substrate. The wirebond or other electrical interconnect passes through the window of the substrate. An encapsulant is deposited over the first, second, and third semiconductor devices.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate external layer having an opening; forming a convex interconnect within the opening with the convex interconnect having a protrusion and a horizontal flange substantially horizontally coplanar with the substrate external layer; forming an insulation layer over the substrate external layer and the convex interconnect; forming a horizontal conductive pathway on the insulation layer; forming a single interlayer conductive connector from the horizontal conductive pathway to the convex interconnect; and connecting an integrated circuit and the horizontal conductive pathway.

Abstract: A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area.

Abstract: A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die.

Abstract: A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and a glass layer disposed over a surface of the passivation layer. The passivation layer has a clear portion for passage of light to the optically active region of the semiconductor die. The semiconductor device further includes an encapsulant disposed over the carrier within the separation to form an expansion region around a periphery of the semiconductor die, a first via penetrating the expansion region, glass layer, and passivation layer, a second via penetrating the glass layer and passivation layer to expose a contact pad on the semiconductor die, and a conductive material filling the first and second vias.

Abstract: An integrated circuit package on package system includes: providing a lead having a wire-bonded die with a bond wire connected thereto; mounting a fan-in interposer over the wire-bonded die and the bond wire; connecting the fan-in interposer to the lead with the bond wires; and encapsulating the wire-bonded die, bond wires, and the fan-in interposer with an encapsulation leaving a portion of the fan-in interposer exposed.

Abstract: In a wafer level chip scale package (WLSCP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLSCP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.

Abstract: A method of manufacture of an integrated circuit package system includes: attaching a first die to a first die pad; connecting electrically a second die to the first die through a die interconnect positioned between the first die and the second die; connecting a first lead adjacent the first die pad to the first die; connecting a second lead to the second die, the second lead opposing the first lead and adjacent the second die; and providing a molding material around the first die, the second die, the die interconnect, the first lead and the second lead, with a portion of the first lead exposed.

Abstract: A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area.