Abstract: A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die.

Abstract: An integrated circuit package system is provided including forming a leadframe having a frame and a die paddle having leads thereon. The leads are held with respect to the die paddle. The leads are separated from the die paddle, and a die is attached to the die paddle. Bond wires are bonded between the leads and the die. The die and bond wires are encapsulated. The leadframe is singulated to separate the frame and the die paddle.

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: an L-plated lead; a die conductively connected to the L-plated lead; and an encapsulant encapsulating the L-plated lead and the die.

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: leads and a paddle; a first encapsulant molded between the leads and the paddle, the first encapsulant thinner than the leads; a non-conductive layer over the paddle; and conductive traces directly on the leads, the first encapsulant, and the non-conductive layer.

Abstract: An integrated circuit package system comprising: fabricating a package base including: forming a lead frame, coupling a first integrated circuit device under the lead frame, coupling a second integrated circuit device over the first integrated circuit device, and molding an enclosure on the lead frame, the first integrated circuit device, and the second integrated circuit device for forming an integration port; and coupling a third integrated circuit device on the integration port.

Abstract: An integrated circuit package system includes: providing a lead having a lead connection surface for connectivity to a next level system; attaching an integrated circuit over the lead having the lead connection surface substantially within a region below a perimeter of the integrated circuit without a die paddle, a substrate conductor, or a redistribution layer; and attaching a die connector to the integrated circuit and the lead.

Abstract: An integrated circuit package system comprising: providing a substrate having a cavity; sealing a package over the cavity of the substrate; and forming an encapsulant over the package and a portion of the substrate substantially preventing the encapsulant from forming in the cavity.

Abstract: A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing inwardly converging leadfingers having continuously decreasing widths along lengths thereof to inward ends thereof; electrically connecting an integrated circuit device on the leadfingers only on portions of the continuously decreasing widths; and encapsulating the integrated circuit device and the leadfingers with an encapsulation.

Abstract: In a wafer level chip scale package (WLCSP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLCSP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs.

Abstract: A method for manufacturing a semiconductor package system includes: providing a leadframe, having an open center, with leads adjacent to a peripheral edge of the leadframe; making a die support pad, formed without tie bars, separately from the leadframe; providing a coverlay tape for positioning the support pad centered within the leadframe; attaching a semiconductor die to the die support pad through a die attach adhesive, the semiconductor die being spaced from the leads; and connecting a bonding pad on the semiconductor die to one of the leads using a bonding wire.

Abstract: A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads.

Abstract: A method of manufacture of an integrated circuit package system includes providing a first frame having a first removable backing element connecting a first die attach pad and a first plurality of terminal leads. A first die is attached to the first die attach pad. A substrate is provided. A second die is attached to the substrate. The first die is attached to the second die with a plurality of die interconnects. The first removable backing element is removed after connecting the first die to the second die.

Abstract: An integrated circuit package in package system includes a package in package lead with a package in package lead surface substantially planar, attaching a first integrated circuit package having a first encapsulant surface substantially coplanar with the package in package lead surface, attaching a second integrated circuit near the first integrated circuit package, and forming a package in package encapsulant over the first integrated circuit package and the second integrated circuit.

Abstract: A method for manufacturing an integrated circuit package system includes: forming a first device unit, having first external interconnects arranged along a perimeter of the first device unit, and a second device unit, having second external interconnects arranged along a perimeter of the second device unit, in an array configuration; mounting an integrated circuit die over the first device unit; connecting the integrated circuit die and the first external interconnects; encapsulating with an encapsulation covering the integrated circuit die, the first device unit, and the second device unit with both the first external interconnects and the second external interconnects partially exposed; and forming a partial encapsulation cut in the encapsulation electrically isolating the first external interconnects and the second electrical interconnects.

Abstract: A semiconductor device has a conductive via formed around a perimeter of the semiconductor die. First and second conductive layers are formed on opposite sides of the semiconductor die and thermally connected to the conductive via. An insulating layer is formed over the semiconductor die. Openings in the insulating layer expose the first conductive layer and a thermal dissipation region of semiconductor die. A thermal via is formed through the insulating layer to the first conductive layer. A thermally conductive layer is formed over the thermal dissipation region and thermal via. A thermal conduction path is formed from the thermal dissipation region through the thermally conductive layer, thermal via, first conductive layer, conductive via, and second conductive layer. The thermal conduction path terminates in an external thermal ground point. The thermally conductive layer provides shielding for electromagnetic interference.

Abstract: A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive THVs are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

Abstract: An integrated circuit package system includes: providing a lead terminal; forming a dummy lead near the lead terminal; positioning a base integrated circuit adjacent the lead terminal and the dummy lead; connecting a die connector to the base integrated circuit and the dummy lead; mounting a stackable integrated circuit over the base integrated circuit; and connecting another of the die connector to the stackable integrated circuit and the dummy lead.

Abstract: A method for manufacturing an integrated circuit package system includes: providing a frame; attaching a leaded package having leads adjacent the frame wherein the leads extend towards a side opposite the frame; and applying a package encapsulant over the leaded package having the leads partially exposed opposite the frame.

Abstract: A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads.