Abstract: In certain embodiments, a method includes forming, on a substrate by spin-on deposition, a layer stack of alternating layers of first and second carbon-containing materials. The layers of the first carbon-containing material include an agent-generating ingredient for generating a solubility-changing agent in response to an activation trigger. The method includes executing the activation trigger in response to which the solubility-changing agent is generated from the agent-generating ingredient in the layers of the first carbon-containing material and modifies the layers of the first carbon-containing material to be soluble in a developer. The method includes etching first openings through the layer stack, filling the first openings with a third material, etching second openings through the layer stack, removing the layers of the first carbon-containing material from the layer stack by exposing those to the developer, and replacing the layers of the first carbon-containing material with a fourth material.

Abstract: Embodiments provide point-of-use blending of photoresist rinse solutions for patterned photoresists. Disclosed methods and systems form different mitigation solutions for multiple different photoresists through point-of-use variable blending of a mitigation solution with de-ionized water and/or other chemistries to adjust the formulation of the solution just prior to dispense within a process chamber. For one example embodiment, different surfactant rinse solutions are used for different photoresists, such as different extreme ultraviolet photoresists. In addition, the level of reactive components, the level of nonreactive components, or both within a mitigation solution can be adjusted using this point-of-use blending to provide an adjusted mitigation solution. The ability to make point-of-use adjustments to the solution chemistry just before dispense on a microelectronic workpiece, such as a semiconductor wafer, improves interactions between the adjusted mitigation solution and the patterned photoresist.

Abstract: Embodiments provide point-of-use blending of photoresist rinse solutions for patterned photoresists. Disclosed methods and systems form different mitigation solutions for multiple different photoresists through point-of-use variable blending of a mitigation solution with deionized water and/or other chemistries to adjust the formulation of the solution just prior to dispense within a process chamber. For one example embodiment, different surfactant rinse solutions are used for different photoresists, such as different extreme ultraviolet photoresists. In addition, the level of reactive components, the level of nonreactive components, or both within a mitigation solution can be adjusted using this point-of-use blending to provide an adjusted mitigation solution. The ability to make point-of-use adjustments to the solution chemistry just before dispense on a microelectronic workpiece, such as a semiconductor wafer, improves interactions between the adjusted mitigation solution and the patterned photoresist.

Abstract: In certain embodiments, a method of microfabrication includes forming a layer stack on a wafer, the layer stack including a photoresist layer formed on an underlying layer. The method further includes depositing a barrier layer on the photoresist layer, the barrier layer selected to prevent penetration from one or more environmental components. The method further includes exposing the photoresist layer to a pattern of actinic radiation and developing the photoresist layer.

Abstract: A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.

Abstract: Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-aligned contacts by using spin-on SiC as a cap layer for at least one other structure, instead of depositing a SiC layer via plasma vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The other structure may be a source and drain contact made through the use of a trench conductor. By utilizing spin-on SiC as a cap layer material, the disclosed methods and process flows avoid problems that typically occur when SiC is deposited, for example by CVD, and subsequently planarized. As such, the disclosed methods and process flows improve upon conventional methods and process flows for forming self-aligned contacts by reducing defectivity and improving yield.

Abstract: A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

Abstract: Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-aligned contacts by using spin-on SiC as a cap layer for at least one other structure, instead of depositing a SiC layer via plasma vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The other structure may be a source and drain contact made through the use of a trench conductor. By utilizing spin-on SiC as a cap layer material, the disclosed methods and process flows avoid problems that typically occur when SiC is deposited, for example by CVD, and subsequently planarized. As such, the disclosed methods and process flows improve upon conventional methods and process flows for forming self-aligned contacts by reducing defectivity and improving yield.

Abstract: A method of processing a wafer that includes: positioning the wafer within a processing chamber, the wafer including a film deposited over a surface of the wafer; rotating the wafer within the processing chamber; mixing a first fluid with a second fluid at a mixing ratio using a dispense nozzle assembly resulting in a fluid mixture; and while rotating the wafer, dispensing the fluid mixture from the dispense nozzle assembly over an edge portion of the wafer to remove a portion of the film on the edge portion of the wafer.

Abstract: Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-aligned contacts by using spin-on SiC as a cap layer for at least one other structure, instead of depositing a SiC layer via plasma vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The other structure may be a source and drain contact made through the use of a trench conductor. By utilizing spin-on SiC as a cap layer material, the disclosed methods and process flows avoid problems that typically occur when SiC is deposited, for example by CVD, and subsequently planarized. As such, the disclosed methods and process flows improve upon conventional methods and process flows for forming self-aligned contacts by reducing defectivity and improving yield.

Abstract: A method for forming a device includes blending, in a mixer within a fabrication facility, a first liquid including a first block copolymer with a second liquid including a second block copolymer to form a first mixture. The first block copolymer includes a first homopolymer and a second homopolymer, where the first homopolymer has a first mole fraction in the first liquid. The second block copolymer includes the first homopolymer and the second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction. The method includes placing a substrate over a substrate holder of a processing chamber within the fabrication facility; and coating the substrate with the first mixture within the processing chamber.

Abstract: A method and a system are described for mixing liquid chemicals at dynamically changing or static ratios during a given dispense, with extremely high uniformity and repeatability. A mixer includes multiple fluid supply lines including elongate bladders defining a linear flow path and being configured to laterally expand to collect a process fluid and laterally contract to deliver a selected volume of the process fluid to the mixer.

Abstract: In certain embodiments, a method of fabricating a device includes forming, on a substrate, a layer stack of alternating layers of a first spin-on material and a second spin-on material. Each layer of the first spin-on material and the second spin-on material is formed by spin-on deposition. The method includes etching first openings through the layer stack and filling the first openings with a third material. The method includes etching second openings through the layer stack, removing the first spin-on material from the layer stack, and replacing the first spin-on material with a fourth material. The fourth material is a first metal-containing material.

Abstract: Embodiments of methods for patterning using enhancement of surface adhesion are presented. In an embodiment, a method for patterning using enhancement of surface adhesion may include providing an input substrate with an anti-reflective coating layer and an underlying layer. Such a method may also include performing a surface adhesion modification process on the substrate, the surface adhesion modification process utilizing a plasma treatment configured to increase an adhesion property of an anti-reflective coating layer without affecting downstream processes. In an embodiment, the method may also include performing a photoresist coating process, a mask exposure process, and a developing process to generate a target patterned structure in a photoresist layer on the substrate. In such embodiments, the method may include controlling operating parameters of the surface adhesion modification process to achieve target profiles of the patterned structure and substrate throughput objectives.

Abstract: Provided is a method for patterning a substrate, comprising: forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using a lithographic process, the pattern being characterized by material structures having a critical dimension (CD) and a roughness; following the preparing the pattern, performing a shrink process to reduce the CD to a reduced CD; and performing a growth process to grow the reduced CD to a target CD. Roughness includes a line edge roughness (LER), a line width roughness (LWR), or both LER and LWR. Performing the shrink process comprises: coating the pattern with a hard mask, the coating generating a hard mask coated resist; baking the hard mask coated resist in a temperature range for a time period, the baking generating a baked coated resist; and developing the baked coated resist in deionized water.

Abstract: A method and a system are described for mixing liquid chemicals at dynamically changing or static ratios during a given dispense, with extremely high uniformity and repeatability. A mixer includes multiple fluid supply lines including elongate bladders defining a linear flow path and being configured to laterally expand to collect a process fluid and laterally contract to deliver a selected volume of the process fluid to the mixer.

Abstract: Embodiments provide point-of-use blending of photoresist rinse solutions for patterned photoresists. Disclosed methods and systems form different mitigation solutions for multiple different photoresists through point-of-use variable blending of a mitigation solution with deionized water and/or other chemistries to adjust the formulation of the solution just prior to dispense within a process chamber. For one example embodiment, different surfactant rinse solutions are used for different photoresists, such as different extreme ultraviolet photoresists. In addition, the level of reactive components, the level of nonreactive components, or both within a mitigation solution can be adjusted using this point-of-use blending to provide an adjusted mitigation solution. The ability to make point-of-use adjustments to the solution chemistry just before dispense on a microelectronic workpiece, such as a semiconductor wafer, improves interactions between the adjusted mitigation solution and the patterned photoresist.

Abstract: Methods are disclosed that selectively deposit a protective material on the top regions of patterned photoresist layers, such patterned EUV photoresist layers, to provide a protective cap that reduces erosion damage during etch processes used for pattern transfer. Some deposition of the protective material on the sidewalls of the patterned photoresist layer is acceptable, and any deposition of the protective material on the underlying layer below the patterned photoresist layer is preferably thinner than the deposition at the top of the photoresist pattern. Further, the selective deposition of protective caps can be implemented, for example, through the application of high-rotation speeds to spatial atomic layer deposition (ALD) techniques. The selective deposition of protective caps increases the flexibility of options to improve etch resistance for various processes/materials.

Abstract: Provided is a nozzle system for dispensing a dispense chemical onto a substrate, the system comprising: a nozzle comprising a nozzle body and a nozzle tip; a shielding device coupled to the nozzle tip, the shielding device configured to create a mini-environment for a dispense chemical such that a partial pressure of the dispense chemical is maintained in the shielding device; wherein the nozzle system is configured to meet selected dispense objectives.

Abstract: Methods are disclosed that selectively deposit a protective material on the top regions of patterned photoresist layers, such patterned EUV photoresist layers, to provide a protective cap that reduces erosion damage during etch processes used for pattern transfer. Some deposition of the protective material on the sidewalls of the patterned photoresist layer is acceptable, and any deposition of the protective material on the underlying layer below the patterned photoresist layer is preferably thinner than the deposition at the top of the photoresist pattern. Further, the selective deposition of protective caps can be implemented, for example, through the application of high-rotation speeds to spatial atomic layer deposition (ALD) techniques. The selective deposition of protective caps increases the flexibility of options to improve etch resistance for various processes/materials.