Abstract: A scan flip-flop circuit includes a selection circuit including first and second input terminals coupled to first and second I/O nodes, a flip-flop circuit coupled to the selection circuit, a first driver coupled between the flip-flop circuit and the first I/O node, and a second driver coupled between the flip-flop circuit and the second I/O node. The selection circuit and drivers receive a scan direction signal. In response to a first logic level of the scan direction signal, the selection circuit responds to a first signal received at the first input terminal, and the second driver outputs a second signal responsive to a flip-flop circuit output signal. In response to a second logic level of the scan direction signal, the selection circuit responds to a third signal received at the second input terminal, and the first driver outputs a fourth signal responsive to the flip-flop circuit output signal.

Abstract: A method of manufacturing an IC structure includes configuring each of an n-well and a p-well in a first IC die to have a first portion extending in a first direction and second and third portions extending from the first portion in a second direction perpendicular to the first direction, and forming IC devices including a first pickup structure electrically connected to the n-well and a second pickup structure electrically connected to the p-well. Forming the IC devices includes forming a PMOS transistor in the second or third portion of the n-well and forming an NMOS transistor in the second or third portion of the p-well.

Abstract: The present invention features compositions and methods featuring ALT-803, a complex of an interleukin-15 (IL-15) superagonist mutant and a dimeric IL-15 receptor ?/Fc fusion protein useful for enhancing an immune response against a neoplasia (e.g., multiple myeloma, melanoma, lymphoma) or a viral infection (e.g., human immunodeficiency virus).

Abstract: The present invention relates to a polybutylene terephthalate composition, and an article derived from the polybutylene terephthalate composition comprising as component (A) polybutylene terephthalate (PBT) resin, as component (B) vinyl aromatic-based polymer comprising units which are derived from vinyl aromatic monomers, and as component (C) reinforcement agent.

Abstract: An integrated circuit includes a clocking transistor, a first enabling transistor, a second enabling transistor, a branch-one transistor, and a branch-two transistor. The first enabling transistor is coupled between the clocking transistor and a first node. The second enabling transistor is coupled between the clocking transistor and a second node. The branch-one transistor is coupled between a first power supply and the first node. The gate terminal of the branch-one transistor is connected to the second node. The branch-two transistor is coupled between the first power supply and the second node. The gate terminal of the branch-two transistor is connected to the first node. Each of the clocking transistor, the first enabling transistor, and the second enabling transistor is a first-type transistor of a reduced threshold. Each of the branch-one transistor and the branch-two transistor is a second-type transistor of a default threshold.

Abstract: An integrated circuit (IC) structure includes a continuous well including first through third well portions. The continuous well is one of an n-well or a p-well, the first well portion extends in a first direction, the second well portion extends from the first well portion in a second direction perpendicular to the first direction, and the third well portion extends from the first well portion in the second direction parallel to the second well portion.

Abstract: A semiconductor device having a cell region, the cell region including a first set of one or more first blocks and a second set of one or more second blocks. Each of the first blocks including a clock gate and each of the second blocks includes a decoupling capacitor. The first set has two or more first blocks and/or the second set has two or more second blocks. The first blocks of the first set are interleaved with the second blocks of the second set.

Abstract: An integrated circuit includes a clocking transistor, a first enabling transistor, a second enabling transistor, a branch-one transistor, a branch-two transistor, and a clock gating circuit. The first enabling transistor is coupled between the clocking transistor and a first node. The second enabling transistor is coupled between the clocking transistor and a second node. The branch-one transistor is coupled between a first power supply and the first node. The gate terminal of the branch-one transistor is electrically connected to the second node. The branch-two transistor is coupled between the first power supply and the second node. The gate terminal of the branch-two transistor is electrically connected to the first node. The clock gating circuit for generating a gated clock signal receives a latch output signal which is latched to a logic level of either a first node signal or a second node signal.

Abstract: In some embodiments, a method of generating a cell in a layout diagram includes: selecting a cell from a library of standard cells, components of the cell defining an active circuit; identifying a dummy device within the cell that is disconnected from the active circuit within the cell; and connecting the dummy device to a target node of the active circuit.

Abstract: The present invention discloses a method for constructing inner dump type strip mine pit bottom reservoirs section by section, specifically including the following steps: S1: processing end slopes: discarding clay at a lowest step of an inner waste dump of a strip mine; S2: discharging concrete to slope faces of lowest steps of the end slopes on two sides of a pit bottom; S3: sealing the bottom; S4: discarding gravel into a pit of the strip mine; S5: laying geotextile; S6: re-adopting clay on the lowest steps of the end slopes of the inner waste dump, so as to form a reservoir sealing isolation layer; S7: constructing a plurality of reservoirs step by step in an advancing direction of the strip mine; S8: storing water resources: completing installation of water storage wells; S9: completing installation of water fetching wells; S10: storing water resources.

Abstract: Provided herein is a method for constructing a pumping-injection well of a groundwater reservoir in a dump of an open-pit mine. The pumping-injection well includes a bottom pipe, intermediate pipes, and a top pipe in sequence from bottom to top connected from bottom to top. The method includes: arranging a rubble barrier around the pumping-injection well, and installing the bottom pipe of the pumping-injection well at a designed position of the pumping-injection well as a center of circle; continuing to install an intermediate pipe on the bottom pipe, and pile up a rubble pile; continuing to stack multiple intermediate pipes, and starting the construction of the groundwater reservoir; discarding discarded materials from the open-pit mine to form a dump; continuing to stack intermediate pipes to build an inverted trapezoidal surface sump around the pumping-injection well; and installing the top pipe and a well cover to form a complete pumping-injection well.

Abstract: A method for constructing a dam inside a dump of an inner-dump strip mine includes: taking an upper surface connection line of a primary water-resisting layer as upper filling reference datum boundary of an artificial water-resisting layer; arranging a dam foundation pit and a trapezoidal abutment on a midline of the dam foundation pit; building and reinforcing a step-shaped retaining dam core wall on the artificial water-resisting layer; laying a foundation impervious layer, waterproof geotextile, and an earth blanket on one side, close to the primary aquifer, of the retaining dam core wall; strengthening advance of a dumping working face on one side, away from the primary aquifer, of the retaining dam core wall, and dumping overburden of a strip mine to form a support; filling a space between the earth blanket and the primary aquifer to form a blocker; and proceeding with construction and forming a continuous retaining dam.

Abstract: A method for slope geological disaster treatment and mineral resource recovery includes the following steps: S1: dividing a mountain top into a plurality of treatment sections and treatment segments; S2, selecting an easy-to-slide area at the upper portion of a first treatment segment and blasting an easy-to-slide body to make the easy-to-slide body roll down to a bottom of the slope; S3, forming a regular initial slope bench; S4, mining coal at the coal seam in a grouped mining adit manner, and laying grouting pipelines in the primary mining adits; S5, forming closed mining adits; S6, excavating secondary mining adits at intervals of the primary mining adits in sequence; S7, continuing mining in an adjacent second treatment segment in the same manner; and S8, continuing mining the first treatment segment of the second treatment section in the same manner.

Abstract: A semiconductor device having a cell region, the cell region including a first set of one or more first blocks and a second set of one or more second blocks. Each of the first blocks including a clock gate and each of the second blocks includes a decoupling capacitor. The first set has two or more first blocks and/or the second set has two or more second blocks. The first blocks of the first set are interleaved with the second blocks of the second set.

Abstract: The disclosure discloses a method for constructing a pumping-injection well of a groundwater reservoir in a dump of an open-pit mine. The pumping-injection well includes a bottom pipe, intermediate pipes, and a top pipe in sequence from bottom to top connected from bottom to top. The method includes: arranging a rubble barrier around the pumping-injection well, and installing the bottom pipe of the pumping-injection well at a designed position of the pumping-injection well as a center of circle; continuing to install an intermediate pipe on the bottom pipe, and pile up a rubble pile; continuing to stack multiple intermediate pipes, and starting the construction of the groundwater reservoir; discarding discarded materials from the open-pit mine to form a dump; continuing to stack intermediate pipes to build an inverted trapezoidal surface sump around the pumping-injection well; and installing the top pipe and a well cover to form a complete pumping-injection well.

Abstract: An integrated circuit includes a clocking transistor, a first enabling transistor, a second enabling transistor, a branch-one transistor, a branch-two transistor, and a clock gating circuit. The first enabling transistor is coupled between the clocking transistor and a first node. The second enabling transistor is coupled between the clocking transistor and a second node. The branch-one transistor is coupled between a first power supply and the first node. The gate terminal of the branch-one transistor is electrically connected to the second node. The branch-two transistor is coupled between the first power supply and the second node. The gate terminal of the branch-two transistor is electrically connected to the first node. The clock gating circuit for generating a gated clock signal receives a latch output signal which is latched to a logic level of either a first node signal or a second node signal.

Abstract: An integrated circuit (IC) structure includes a continuous well including first through third well portions. The continuous well is one of an n-well or a p-well, the first well portion extends in a first direction, the second well portion extends from the first well portion in a second direction perpendicular to the first direction, and the third well portion extends from the first well portion in the second direction parallel to the second well portion.

Abstract: A method for constructing a dam inside a dump of an inner-dump strip mine includes: taking an upper surface connection line of a primary water-resisting layer as upper filling reference datum boundary of an artificial water-resisting layer; arranging a dam foundation pit and a trapezoidal abutment on a midline of the dam foundation pit; building and reinforcing a step-shaped retaining dam core wall on the artificial water-resisting layer; laying a foundation impervious layer, waterproof geotextile, and an earth blanket on one side, close to the primary aquifer, of the retaining dam core wall; strengthening advance of a dumping working face on one side, away from the primary aquifer, of the retaining dam core wall, and dumping overburden of a strip mine to form a support; filling a space between the earth blanket and the primary aquifer to form a blocker; and proceeding with construction and forming a continuous retaining dam.

Abstract: A semiconductor device includes a substrate, a first gate structure, a second gate structure, a third gate structure, and a first source/drain region. The first, second, and third gate structures are above the substrate and arranged in a first direction. The first, second, and third gate structures extend in a second direction different from the first direction, and the second gate structure is between the first and third gate structures. The first source/drain region is between the first and third gate structures, and the first source/drain region is at one end of the second gate structure.

Abstract: The present invention discloses a method for constructing inner dump type strip mine pit bottom reservoirs section by section, specifically including the following steps: S1: processing end slopes: discarding clay at a lowest step of an inner waste dump of a strip mine; S2: discharging concrete to slope faces of lowest steps of the end slopes on two sides of a pit bottom; S3: sealing the bottom; S4: discarding gravel into a pit of the strip mine; S5: laying geotextile; S6: re-adopting clay on the lowest steps of the end slopes of the inner waste dump, so as to form a reservoir sealing isolation layer; S7: constructing a plurality of reservoirs step by step in an advancing direction of the strip mine; S8: storing water resources: completing installation of water storage wells; S9: completing installation of water fetching wells; S10: storing water resources.