Patents by Inventor Luc Ouellet

Luc Ouellet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7799376
    Abstract: A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: September 21, 2010
    Assignee: DALSA Semiconductor Inc.
    Inventors: Vincent Fortin, Luc Ouellet
  • Patent number: 7799656
    Abstract: A method is disclosed for making a MEMS device wherein anhydrous HF exposed silicon nitride is used as a temporary adhesion layer allowing the transfer of a layer from a Carrier Wafer to a Device Wafer.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: September 21, 2010
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Patrick Wright
  • Publication number: 20100173436
    Abstract: A MEMS device is manufactured by first forming a self-aligned monolayer (SAM) on a carrier wafer. Next, a first polymer layer is formed on the self-aligned monolayer. The first polymer layer is patterned form a microchannel cover, which is then bonded to a patterned second polymer layer on a device wafer to form microchannels. The carrier wafer is then released from the first polymer layer.
    Type: Application
    Filed: January 4, 2010
    Publication date: July 8, 2010
    Applicant: DALSA SEMICONDUCTOR INC.
    Inventors: Luc Ouellet, Stephane Martel
  • Patent number: 7682860
    Abstract: A method of making a MEMS device is disclosed wherein anhydrous HF exposed silicon nitride is used as a temporary adhesion layer to permit the transfer of a layer from a carrier substrate to a receiving substrate.
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: March 23, 2010
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Veronique Giard, Sylvie Archambault, Paul Ignatiuk
  • Publication number: 20090312540
    Abstract: Novel spatially-defined macrocyclic compounds incorporating peptide bond surrogates are disclosed. Libraries of these macrocycles are then used to select one or more macrocycle species that exhibit a specific interaction with a particular biological target, in particular, compounds according to the invention are disclosed as agonists or antagonists of a mammalian motilin receptor and a mammalian ghrelin receptor.
    Type: Application
    Filed: May 26, 2009
    Publication date: December 17, 2009
    Inventors: Pierre Deslongchamps, Yves Dory, Luc Ouellet, Gerald Villeneuve, Mahesh Ramaseshan, Daniel Fortin, Mark L. Peterson, Hamid R. Hoveyda, Sylvie Beaubien, Eric Marsault, Graeme L. Fraser
  • Patent number: 7614253
    Abstract: A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: November 10, 2009
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Jonathan Lachance
  • Publication number: 20090240027
    Abstract: The present invention is directed to novel macrocyclic compounds of formula (I) and their pharmaceutically acceptable salts, hydrates or solvates: wherein R1, R2, R3, R4, R5, R6, n1, m, p Z1, Z2, and Z3 are as describe in the specification. The invention also relates to compounds of formula (I) which are antagonists of the motilin receptor and are useful in the treatment of disorders associated with this receptor and with or with motility dysfunction.
    Type: Application
    Filed: November 19, 2008
    Publication date: September 24, 2009
    Inventors: Eric Marsault, Kamel Benakli, Hamid R. Hoveyda, Mark L. Peterson, Sylvie Beaubien, Luc Ouellet, Carl St-Louis, Sophie Beauchemin
  • Patent number: 7579622
    Abstract: A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.
    Type: Grant
    Filed: February 11, 2005
    Date of Patent: August 25, 2009
    Assignee: DALSA Semiconductor Inc.
    Inventor: Luc Ouellet
  • Publication number: 20090198050
    Abstract: The present invention provides novel conformationally-defined macrocyclic compounds that have been demonstrated to be selective modulators of the ghrelin receptor (growth hormone secretagogue receptor, GHS-R1a and subtypes, isoforms and variants thereof). Methods of synthesizing the novel compounds are also described herein. These compounds are useful as agonists of the ghrelin receptor and as medicaments for treatment and prevention of a range of medical conditions including, but not limited to, metabolic and/or endocrine disorders, gastrointestinal disorders, cardiovascular disorders, obesity and obesity-associated disorders, central nervous system disorders, genetic disorders, hyperproliferative disorders and inflammatory disorders.
    Type: Application
    Filed: October 31, 2008
    Publication date: August 6, 2009
    Inventors: Eric Marsault, Luc Ouellet, Carl St-Louis, Sylvie Beaubien, Kamel Benakli, Hamid R. Hoveyda, Mark L. Peterson, Shridhar Bhat
  • Patent number: 7550431
    Abstract: Novel spatially-defined macrocyclic compounds incorporating peptide bond surrogates are disclosed. Libraries of these macrocycles are then used to select one or more macrocycle species that exhibit a specific interaction with a particular biological target. In particular, compounds according to the invention are disclosed as agonists or antagonists of a mammalian motilin receptor and a mammalian ghrelin receptor.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: June 23, 2009
    Assignee: Tranzyme Pharma Inc.
    Inventors: Pierre Deslongchamps, Yves Dory, Luc Ouellet, Gérald Villeneuve, Mahesh Ramaseshan, Daniel Fortin, Mark L. Peterson, Hamid R. Hoveyda, Sylvie Beaubien, Éric Marsault, Graeme L. Fraser
  • Publication number: 20090137835
    Abstract: The present invention is directed to novel macrocyclic compounds of formula (I) and their pharmaceutically acceptable salts, hydrates or solvates: wherein R1, R2, R3, R4, R5, R6, n1, m, p Z1, Z2, and Z3 are as describe in the specification. The invention also relates to compounds of formula (I) which are antagonists of the motilin receptor and are useful in the treatment of disorders associated with this receptor and with or with motility dysfunction.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 28, 2009
    Inventors: Eric Marsault, Luc Ouellet, Hamid R. Hoveyda
  • Publication number: 20090137817
    Abstract: Novel spatially-defined macrocyclic compounds containing specific conformational control elements are disclosed. Libraries of these macrocycles are then used to select one or more macrocycle species that exhibit a specific interaction with a particular biological target. In particular, compounds according to the invention are disclosed as agonists or antagonists of a mammalian motilin receptor and a mammalian ghrelin receptor.
    Type: Application
    Filed: August 25, 2008
    Publication date: May 28, 2009
    Inventors: Pierre Deslongchamps, Yves Dory, Kamel Benakli, Eric Marsault, Luc Ouellet, Mahesh Ramaseshan, Martin Vezina, Daniel Fortin, Ruoxi Lan, Shigui Li, Gerald Villeneuve, Hamid R. Hoveyda, Sylvie Beaubien, Mark L. Peterson
  • Publication number: 20090029533
    Abstract: A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 29, 2009
    Applicant: DALSA SEMICONDUCTOR INC.
    Inventors: Vincent Fortin, Luc Ouellet
  • Publication number: 20080299695
    Abstract: A method is disclosed for making a MEMS device wherein anhydrous HF exposed silicon nitride is used as a temporary adhesion layer allowing the transfer of a layer from a Carrier Wafer to a Device Wafer.
    Type: Application
    Filed: March 11, 2008
    Publication date: December 4, 2008
    Applicant: DALSA SEMICONDUCTOR INC.
    Inventors: Luc Ouellet, Patrick Wright
  • Patent number: 7459329
    Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.
    Type: Grant
    Filed: October 21, 2005
    Date of Patent: December 2, 2008
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Robert Antaki
  • Patent number: 7452862
    Abstract: Novel spatially-defined macrocyclic compounds containing specific conformational control elements are disclosed. Libraries of these macrocycles are then used to select one or more macrocycle species that exhibit a specific interaction with a particular biological target. In particular, compounds according to the invention are disclosed as agonists or antagonists of a mammalian motilin receptor and a mammalian ghrelin receptor.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: November 18, 2008
    Assignee: Tranzyme Pharma, Inc.
    Inventors: Pierre Deslongchamps, Yves Dory, Mark Peterson, Kamel Benakli, Eric Marsault, Luc Ouellet, Mahesh Ramaseshan, Martin Vézina, Daniel Fortin, Ruoxi Lan, Shigui Li, Gérald Villeneuve, Hamid Hoveyda, Sylvie Beaubien, Graeme L Fraser
  • Publication number: 20080194672
    Abstract: The present invention provides novel conformationally-defined macrocyclic compounds that can function as selective modulators of the ghrelin receptor (growth hormone secretagogue receptor, GHS-R1a and subtypes, isoforms and variants thereof). Methods of synthesizing the novel compounds are also described herein. These compounds are useful as agonists of the ghrelin receptor and as medicaments for treatment and prevention of a range of medical conditions including, but not limited to, metabolic and/or endocrine disorders, gastrointestinal disorders, cardiovascular disorders, obesity and obesity-associated disorders, central nervous system disorders, bone disorders, genetic disorders, hyperproliferative disorders and inflammatory disorders.
    Type: Application
    Filed: February 8, 2008
    Publication date: August 14, 2008
    Inventors: Hamid Hoveyda, Graeme L. Fraser, Kamel Benakli, Sophie Beauchemin, Martin Brassard, David Drutz, Eric Marsault, Luc Ouellet, Mark L. Peterson, Zhigang Wang
  • Patent number: 7365016
    Abstract: A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performing an in-situ vacuum evaporation of etch by-products at a temperature of more than about 100° C. and at vacuum level lower than the 40 Torr without exposure to ambient air.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: April 29, 2008
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Ghislain Migneault, Jun Li
  • Patent number: 7341905
    Abstract: A process for making an integrated circuit is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence consists of sixteen specific mask steps that permit a variety of bipolar/CMOS/DMOS devices to be fabricated. The mask steps include (1) forming at least one N-well in the p-type material, (2) forming an active region, forming a p-type field region, (4) forming a gate oxide, (5) carrying out a p-type implantation, (6) forming polysilicon gate regions, (7) forming a p-base region, (8) forming a N-extended region, (9) forming a p-top region, 10) carrying out an N+ implant, (11) carrying out a P+ implant, (12) forming contacts, (13) depositing a metal layer, (14) forming vias, (15) depositing a metal layer therethrough, and (16) forming a passivation layer. Up to any three of mask steps (4), (7), (8), and (9) may be omitted depending on the type of integrated circuit.
    Type: Grant
    Filed: December 27, 2004
    Date of Patent: March 11, 2008
    Assignee: DALSA Semiconductor Inc.
    Inventors: Stephane Martel, Yan Riopel, Sebastien Michel, Luc Ouellet
  • Patent number: 7291513
    Abstract: A method is disclosed for making a wafer-level package for a plurality of MEMS devices. The method involves preparing a MEMS wafer and a lid wafer, each having respective bonding structures. The lid and MEMS wafers are then bonded together through the bonding structures. The wafers are substantially free of alkali metals and/or chlorine. IN a preferred embodiment, each wafer has a seed layer, a structural underlayer and an anti-oxidation layer. A solder layer, normally formed on the lid wafer, bonds the two wafers together.
    Type: Grant
    Filed: December 7, 2004
    Date of Patent: November 6, 2007
    Assignee: DALSA Semiconductor Inc.
    Inventors: Luc Ouellet, Karine Turcotte