Abstract: An exhaust gas catalyst system for a vehicle, for treating fine dusts of exhaust gases produced by an internal combustion engine group of the vehicle, having an inlet duct and an outlet duct connectable to the internal combustion engine group and to a diesel particulate filter (DPF) system. A hollow main body extends along a main axis (X-X) between a head wall having an inlet opening and an outlet opening, and a bottom wall and defines a gas treatment chamber having a first chamber fluidically connected to the inlet opening and a second chamber fluidically connected to the outlet opening. The first and second chambers are fluidically connected in a region proximal to the bottom wall so exhaust gases flow in the first and second chambers in opposite directions. Exothermic filtration and oxidation operations are carried out on the fine dusts by a catalyst substrate housed in the second chamber.

Abstract: The invention describes an internal combustion engine (14) for a vehicle (12) that comprises a fly-wheel (24) placed at the rear part with respect to the internal combustion engine (14), a cooling system (28) placed at the front part with respect to the internal combustion engine, a forced induction group consisting of a turbine (22), placed on the same side as the fly-wheel (24), and a compressor (30), placed on the same side as the cooling system (28), and a system (10) for treating the exhaust gases provided with a conduit for the inlet of exhaust gases, operatively connected to the exit door of the turbine, a conduit for the outlet of exhaust gases and a main body or shell (38) internally hollow for containing a substrate (44) through which the exhaust gases are conveyed so that they are subject to predefined chemical reactions.

Abstract: The invention describes an internal combustion engine (14) for a vehicle (12) that comprises a fly-wheel (24) placed at the rear part with respect to the internal combustion engine (14), a cooling system (28) placed at the front part with respect to the internal combustion engine, a forced induction group consisting of a turbine (22), placed on the same side as the fly-wheel (24), and a compressor (30), placed on the same side as the cooling system (28), and a system (10) for treating the exhaust gases provided with a conduit for the inlet of exhaust gases, operatively connected to the exit door of the turbine, a conduit for the outlet of exhaust gases and a main body or shell (38) internally hollow for containing a substrate (44) through which the exhaust gases are conveyed so that they are subject to predefined chemical reactions.

Abstract: A nonvolatile memory storage controller is provided for delivering log likelihood ratios (LLRs) to a low-density parity check (LDPC) decoder for use in the decoding of an LDPC encoded codeword. The controller includes read circuitry for reading an LDPC encoded codeword stored in a nonvolatile memory storage module using a plurality of soft-decision reference voltages to provide a plurality of soft-decision bits representative of the codeword. The controller further includes a plurality of neighboring cell contribution LLR look-up tables representative of the contribution of the neighboring cells to threshold voltage distribution of the memory storage module. The controller provides the LLRs from the appropriate LLR look-up table to an LDPC decoder for the subsequent decoding of the codeword.

Abstract: A system and method reading, accumulating and processing soft information for use in LDPC decoding. In accordance with the present invention, an LDPC decoder includes accumulation circuitry to receive soft reads of a cell of the nonvolatile memory storage module and to produce an accumulated soft read that can be used to identify an appropriate LLR for the cell. The accumulation circuitry of the present invention may include, an accumulation RAM, an arithmetic logic unit (ALU) and a soft accumulation control and sequencing module for accumulating and processing soft information for use in LDPC decoding.

Abstract: A system and method for memory block pool wear leveling in a nonvolatile memory device. An improved bit error rate for the nonvolatile memory system is attained by identifying a plurality of memory block pools of the nonvolatile memory system, identifying a relaxation time delay for each of the plurality of memory block pools and executing a predetermined number of program/erase cycles for each of the plurality of memory block pools based upon the relaxation time delay of the memory block pools.

Abstract: A nonvolatile memory system and a method for using programming time to reduce bit errors in the nonvolatile memory system are disclosed. The method includes programming a plurality of memory cells of a nonvolatile memory device, identifying weak cells using programming time and preventing subsequent programming to the identified weak cells.

Abstract: A nonvolatile memory system and a method for using programming time to reduce bit errors in the nonvolatile memory system are disclosed. The method includes programming a plurality of memory cells of a nonvolatile memory device, identifying weak cells using programming time and preventing subsequent programming to the identified weak cells.

Abstract: A system and method for memory block pool wear leveling in a nonvolatile memory device. An improved bit error rate for the nonvolatile memory system is attained by identifying a plurality of memory block pools of the nonvolatile memory system, identifying a relaxation time delay for each of the plurality of memory block pools and executing a predetermined number of program/erase cycles for each of the plurality of memory block pools based upon the relaxation time delay of the memory block pools.

Abstract: Method of programming a multi-level memory cell may include transferring one or more values between an auxiliary latch of the multi-level memory cell and a most significant bit (MSB) latch of the multi-level memory cell and/or between the auxiliary latch and a least significant bit (LSB) latch of the multi-level memory cell while programming the multi-level memory cell.

Abstract: A system and method reading, accumulating and processing soft information for use in LDPC decoding. In accordance with the present invention, an LDPC decoder includes accumulation circuitry to receive soft reads of a cell of the nonvolatile memory storage module and to produce an accumulated soft read that can be used to identify an appropriate LLR for the cell. The accumulation circuitry of the present invention may include, an accumulation RAM, an arithmetic logic unit (ALU) and a soft accumulation control and sequencing module for accumulating and processing soft information for use in LDPC decoding.

Abstract: A nonvolatile memory storage controller is provided for delivering log likelihood ratios (LLRs) to a low-density parity check (LDPC) decoder for use in the decoding of an LDPC encoded codeword. The controller includes read circuitry for reading an LDPC encoded codeword stored in a nonvolatile memory storage module using a plurality of soft-decision reference voltages to provide a plurality of soft-decision bits representative of the codeword. The controller further includes a plurality of neighboring cell contribution LLR look-up tables representative of the contribution of the neighboring cells to threshold voltage distribution of the memory storage module. The controller provides the LLRs from the appropriate LLR look-up table to an LDPC decoder for the subsequent decoding of the codeword.

Abstract: A data storage device reads a data unit from a memory page, detects a number of data bit errors in the data unit, and generates a bit error indicator identifying bit indexes of the data bit errors in the data unit. The data storage device reads the data unit from the memory page once again and generates a corrected data unit by correcting data bit errors in the data unit based on the error correction code if the number of data bit errors in the data unit does not exceed an error correction capacity of the error correction code. Otherwise, the data storage device generates a modified data unit based on the data unit by negating at least one erroneous data bit the data unit based on the bit error indicator and corrects any remaining data bit errors in the modified data unit based on the error correction code.

Abstract: Embodiments of the present disclosure provide methods and apparatuses related to programming multilevel memory cells of a memory device. Other embodiments may be described and claimed.

Abstract: Methods and apparatus for programming a memory include programming cells to a first threshold voltage, verifying programming using a first verify voltage, and applying a test read voltage to verify again that the cells are programmed to the first threshold voltage. The test read voltage is lower than the first verify voltage.

Abstract: A circuit comprises at least one memory cell adapted to store data in terms of values of an electrical characteristic thereof, which exhibits a variability with temperature according to a first variation law; a voltage generator is provided for generating a voltage to be supplied to the at least one memory cell for retrieving the data stored therein, the voltage generator including first means adapted to cause the generated voltage take a value in a set of target values including at least one target value, corresponding to an operation to be performed on the memory cell. The voltage generator comprises second means for causing the value taken by the generated voltage vary with temperature according to a prescribed second variation law exploiting a compensation circuit element having said electrical characteristic.

Abstract: A multistage circuit for regulating the charge voltage or the discharge current of a capacitance of an integrated device at a certain charge-pump generated boosted voltage is implemented without integrating high voltage transistor structures having a type of conductivity corresponding to the same sign of the boosted voltage (high-side transistors). The multistage circuit current includes at least a first stage, and an output stage in cascade to the first stage and coupled to the capacitance. The first stage is supplied at an unboosted power supply voltage of the integrated device, and the output stage is supplied at an unregulated charge-pump generated boosted voltage. The first stage includes a transistor having a type of conductivity corresponding to an opposite sign of the boosted voltage and of the power supply voltage. The drain of the output stage transistor is coupled to the boosted voltage either through a resistive pull-up or a voltage limiter.

Abstract: A voltage regulator integrated in a chip of semiconductor material is provided.

Abstract: The capacitive coupling between two adjacent bitlines of a NAND memory device may be exploited for boosting the voltage of bitlines that are not to be programmed in order to inhibit program operations on them. The even (odd) bitlines that include cells not to be programmed are biased with a first voltage for inhibiting them from being programmed while the even (odd) bitlines that include cells to be programmed are grounded. The adjacent odd (even) bitlines are biased at the supply voltage or at an auxiliary voltage for boosting the bias voltage of the even (odd) bitlines above the supply voltage. The bias voltage of the even (odd) bitlines that include cells not to be programmed is boosted because of the relevant parasitic coupling capacitances between adjacent bitlines.

Abstract: Embodiments of the present disclosure provide methods and apparatuses related to programming multilevel memory cells of a memory device. Other embodiments may be described and claimed.