Patents by Inventor Lyle D. Breiner

Lyle D. Breiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for enhancing oxide to nitride selectivity through the use of independent heat control
    Patent number: 5880036
    Abstract: A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
    Type: Grant
    Filed: November 15, 1993
    Date of Patent: March 9, 1999
    Assignee: Micron Technology, Inc.
    Inventors: David S. Becker, Guy T. Blalock, Lyle D. Breiner
  • Method to form hemi-spherical grain (HSG) silicon
    Patent number: 5837580
    Abstract: An embodiment of the present invention develops a process for forming Hemi-Spherical Grained silicon by the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein the amorphous silicon comprising at least one impurity doped amorphous portion, the amorphous silicon is deposited at a deposition temperature no greater than 525.degree. C.; and annealing the amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming the amorphous silicon into the Hemi-Spherical Grained silicon.
    Type: Grant
    Filed: April 23, 1997
    Date of Patent: November 17, 1998
    Assignee: Micron Technology, Inc.
    Inventors: Randhir P. S. Thakur, Lyle D. Breiner
  • Method to form hemi-spherical grain (HSG) silicon from amorphous silicon
    Patent number: 5656531
    Abstract: An embodiment of the present invention develops a process for forming Hemi-Spherical Grained silicon by the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein the amorphous silicon comprising at least one impurity doped amorphous portion, the amorphous silicon is deposited at a deposition temperature no greater than 525.degree. C; and annealing the amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming the amorphous silicon into the Hemi-Spherical Grained silicon.
    Type: Grant
    Filed: December 15, 1995
    Date of Patent: August 12, 1997
    Assignee: Micron Technology, Inc.
    Inventors: Randhir P. S. Thakur, Lyle D. Breiner