Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: A ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. The ceramic layer has high thermal conductivity and high electrical resistivity. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer. The top conductive layer and the joining layer are etched to form the electrically isolated conductive pads. The conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.

Abstract: A microheat exchanging assembly is configured to cool one or more heat generating devices, such as integrated circuits or laser diodes. The microheat exchanging assembly includes a first ceramic assembly thermally coupled to a first surface, and in cases, a second ceramic assembly thermally coupled to a second surface. The ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer.

Abstract: The present invention provides methods and apparatuses which achieve high heat transfer in a fluid cooling system, and which do so with a small pressure drop across the system. The present invention teaches the use of wall features on the fins of a heat exchanger to cool fluid in a fluid cooling system. The present invention also discloses high aspect ratio, high surface area structures applicable in micro-heat exchangers for fluid cooling systems and cost effective methods for manufacturing the same.

Abstract: An structure and method of manufacturing a microstructure for use in a heat exchanger is disclosed. The heat exchanger comprises a manifold layer and an microstructured region. The manifold layer comprises a structure to deliver fluid to the microstructured region. The microstructured region is formed from multiple windowed layers formed from heat conductive layers through which a plurality of microscaled apertures have been formed by a wet etching process. The plurality of windowed layers are then coupled together to form a composite microstructure.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: A microheat exchanging assembly is configured to cool one or more heat generating devices, such as integrated circuits or laser diodes. The microheat exchanging assembly includes a first ceramic assembly thermally coupled to a first surface, and in cases, a second ceramic assembly thermally coupled to a second surface. The ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer.

Abstract: A ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. The ceramic layer has high thermal conductivity and high electrical resistivity. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer. The top conductive layer and the joining layer are etched to form the electrically isolated conductive pads. The conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.

Abstract: An structure and method of manufacturing a microstructure for use in a heat exchanger is disclosed. The heat exchanger comprises a manifold layer and an microstructured region. The manifold layer comprises a structure to deliver fluid to the microstructured region. The microstructured region is formed from multiple windowed layers formed from heat conductive layers through which a plurality of microscaled apertures have been formed by a wet etching process. The plurality of windowed layers are then coupled together to form a composite microstructure.

Abstract: A cooling system includes a cooling unit configured to fit within a single drive bay of a personal computer. The cooling unit includes a fluid-to-air heat exchanger, an air mover, a pump, fluid lines, and control circuitry. The cooling system also includes a cooling loop configured to be coupled to one or more heat generating devices. The cooling loop includes the pump and the fluid-to-air heat exchanger from the cooling unit, and at least one heat exchanger coupled together via flexible fluid lines. The heat exchanger is thermally coupled to the heat generating device. The cooling unit is configured to maintain noise below a specified acoustical specification. To meet this acoustical specification, the size, position, and type of the components within the cooling unit are specifically configured.

Abstract: A heat exchanging system uses a metallic TIM for efficient heat transfer between a heat source and a heat exchanger. The heat source is preferably an integrated circuit coupled to a circuit board. The metallic TIM preferably comprises indium. The metallic TIM is comprised of either a separate metallic TIM foil or as a deposited layer of metal material. The metallic TIM foil is mechanically joined to a first surface of the heat exchanger and to a first surface of the integrated circuit by applying sufficient pressure during clamping. Disassembly is accomplished by un-clamping the heat exchanger, the metallic TIM foil, and the integrated circuit from each other. Once disassembled, the heat exchanger and the metallic TIM foil are available to be used again. If the metallic TIM is deposited onto the heat exchanger, disassembly yields a heat exchanging sub-assembly that is also reusable.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Abstract: A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.

Abstract: A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.

Abstract: The present invention describes a method including providing a component, the component having a bond pad; forming a passivation layer over the component; forming a via in the passivation layer to uncover the bond pad; and forming an under bump metallurgy (UBM) over the passivation layer, in the via, and over the bond pad, in which the UBM includes an alloy of Aluminum and Magnesium. The present invention also describes an under bump metallurgy (UBM) that includes a lower layer, the lower layer including an alloy of Aluminum and Magnesium; and an upper layer located over the lower layer.