Abstract: An array of C4 solder bumps and a method for making is described incorporating an array of conductive areas on an electrical device, each conductive area having a layer of ball limited metalurgy at the device surface and two layers of solder having respective melting temperatures to form the C4 structure. The method includes melting the second layer of solder in the down position or towards earth to form a C4 solder ball or bump. The invention overcomes the problem of low temperature solder from wicking over the sidewall surfaces of the high melt solder of the C4 structure and attacking the edges of the underlying seed layers of the ball limited metalurgy.

Abstract: Monitoring techniques have been developed for direct/indirect determination of metal etching bath components and for managing their replenishment. The disclosed methods have been successfully employed to make TiW etching a robust process that provides minimized and controlled undercutting of ball limited metallurgy and mechanical reliable C4s. A metal etching solution is monitored and replenished by measuring the sulfate concentration of a hydrogen peroxide, soluble salt, and soluble EDTA salt etchant. Turbidimetric titration conditions are used to measure and compare opaqueness of liquids by viewing light through them and determining how much light is cut off. Additional sulfate is added to maintain the sulfate concentration. Water and/or fresh etchant is added to compensate for evaporation or drag.

Abstract: A method of removing a metal skin from a through-hole surface of a copper-Invar-copper (CIC) laminate without causing differential etchback of the laminate. The metal skin includes debris deposited on the through-hole surface as the through hole is being formed by laser or mechanical drilling of a substrate that includes the laminate as an inner plane. Removing the metal skin combines electrochemical polishing (ECP) with ultrasonics. ECP dissolves the metal skin in an acid solution, while ultrasonics agitates and circulates the acid solution to sweep the metal skin out of the through hole. ECP is activated when a pulse power supply is turned on and generates a periodic voltage pulse from a pulse power supply whose positive terminal is coupled to the laminate and whose negative terminal is coupled to a conductive cathode. After the metal skin is removed, the laminate is differentially etched such that the copper is etched at a faster rate than the Invar.

Abstract: An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe and NiCoFe on the adhesion/barrier layer, and a lead-free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu.

Abstract: An electrochemical etching apparatus and method increasing the rate at which material is removed from a substrate such as a metallic surface. The apparatus includes an electrolyte delivery system positioned below and centered beneath the center of the substrate (e.g., a wafer) to be etched so that the center axis of the delivery system corresponds to the center of the wafer. The electrolyte delivery system and the wafer are then rotated relative to each other as the electrolyte is discharged from the delivery system and toward the surface of the wafer. A corresponding method for electrochemically etching a surface of the wafer with an electrolyte is also provided.

Abstract: A primary lithium battery particularly adapted for use in self-contained self-powered devices (SSPD) for mobile communication and computing products, such as radio frequency identification tags, PCMCIA cards, and smart cards. The battery utilizes a solid polymer electrolyte membrane that preferably has a polyacrylonitrile matrix. Performance of the electrolyte membrane is optimized by controlling the amount of aprotic organic solvents within the membrane within a prescribed range of ratios. The battery cathode is encapsulated within a polymeric matrix that eliminates the exposure hazard posed by lithium intercalation compounds used within the cathode. Use of stainless steel foil current collectors gives a high open circuit voltage of 3.8 volts and high cell capacity. A method of determining the optimum cathode thickness in the battery is also described. This provides a means of maximizing volumetric and gravimetric energy densities by using the optimum amount of cathode material.

Abstract: A primary lithium battery particularly adapted for use in self-contained self-powered devices (SSPD) for mobile communication and computing products, such as radio frequency identification tags, PCMCIA cards, and smart cards. The battery has a flexible and compact design which eliminates use of a separate electrolyte membrane by utilizing an electrolyte-bearing composite cathode that preferably has a polyacrylonitrile matrix. Performance of the battery is optimized by controlling the amount of aprotic organic solvents within the composite cathode within a prescribed range of ratios. In so doing, the performance characteristics of the battery closely approximate those having conventional liquid electrolytes without the safety concerns associated with liquid electrolyte leakage, and exhibit enhanced performance at sub-ambient temperatures.

Abstract: A primary lithium battery particularly adapted for use in self-contained self-powered devices (SSPD) for mobile communication and computing products, such as radio frequency identification tags, PCMCIA cards, and smart cards. The battery has a flexible and compact design, and utilizes a solid polymer electrolyte membrane that preferably has a polyacrylonitrile matrix. Performance of the electrolyte membrane is optimized by controlling the amount of aprotic organic solvents within the membrane within a prescribed range of ratios. In so doing, the performance characteristics of the battery closely approximate that of conventional liquid electrolytes without the safety hazards associated with the risk of liquid electrolyte leakage, and exhibit enhanced performance at sub-ambient temperatures. A further feature is that the battery's cathode is encapsulated within a polymeric matrix that eliminates the exposure hazard posed by lithium intercalation compounds used within the cathode.

Abstract: The present invention provides a means of fabricating a reliable C4 flip-chip structure for low-temperature joining. The electrochemically fabricated C4 interconnection has a barrier layer between the electroplated tin-rich solder bump and the ball-limiting metallurgy that protects the terminal metal in the ball-limiting metallurgy from attack by the Sn in the solder. The barrier layer is electroplated through the same photoresist mask as the solder and thus does not require a separate patterning step. A thin layer of electroplated nickel serves as a reliable barrier layer between a copper-based ball-limiting metallurgy and a tin-lead (Sn--Pb) eutectic C4 ball.

Abstract: Disclosed is an electrochemical etching apparatus including a fixture for holding a workpiece; a nozzle, positioned opposite the fixture and facing the workpiece, for impinging an etchant onto the workpiece; and an electrode for applying a voltage between the electrode and the workpiece; wherein, in operation, one of the fixture and nozzle are rotated and the nozzle is moved radially outwardly so that the workpiece is spirally etched. Also disclosed is a method of spirally etching a workpiece.

Abstract: The present invention relates to a chemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant comprising 10-25 gms EDTA, 15-35 gms K.sub.2 HPO.sub.4 and 25-45 gms oxalic acid in a liter of 30% H.sub.2 O.sub.2. More particularly, in the fabrication of interconnections for microchip structures, the present invention addresses the removal of intermediate adherent layers, e.g., Ti--W, without damaging other microchip structures made of other metals, such as Al or Al--Cu test pads; Cu and phased Cr--Cu layers; and Sn--Pb solder bumps. The use of potassium phosphate in the hydrogen peroxide+EDTA bath has been found to significantly reduce the attack on the metal not to be etched. Furthermore, the use of oxalic acid in the bath prevented the deposition of tin oxide on the substrate adherent layer metal, thus facilitating its complete removal.

Abstract: Reduced undercutting of a titanium-tungsten layer in a ball limiting metallurgy (BLM) is achieved in the preparation of solder ball interconnect structures by removing metal oxide film which forms on the titanium-tungsten layer and etching the titanium-tungsten layer in different steps. Removing the metal oxide with an acid solution prior to etching the titanium-tungsten layer provides for a more uniform etch of the titanium-tungsten layer.

Abstract: A chemical etchant for the removal of titanium-tungsten containing structures from the semiconductors and a method for removing the titanium-tungsten. The etchant comprising a solution of hydrogen peroxide, a salt of EDTA, and an acid, the acid capable of preventing the deposition of tin oxide. The method of removal comprises first obtaining a wafer containing titanium-tungsten. Second, immersing the wafer having titanium-tungsten thereon for a predetermined period of time in an etchant bath comprising a solution of hydrogen peroxide, a salt of EDTA and an acid, the acid capable of preventing the deposition of tin oxide. Third, removing the treated wafer and rinsing the treated wafer and lastly, drying the wafer.

Abstract: Reduced undercutting of a titanium-tungsten layer in a ball limiting metallurgy (BLM) is achieved in the preparation of solder ball interconnect structures by removing metal oxide film which forms on the titanium-tungsten layer and etching the titanium-tungsten layer in different steps. Removing the metal oxide with an acid solution prior to etching the titanium-tungsten layer provides for a more uniform etch of the titanium-tungsten layer.

Abstract: An electroetching tool using scanned localized application of flowing electrolyte against a workpiece such as a large area mask having high density features for the fabrication of microelectronic components. A masked molybdenum plate is suspended in a vertical direction within a tank which functions as a reservoir for a recirculating electrobyte. The electrolyte in the reservoir is filtered and pumped to a pair of travelling cathode assemblies from which the flowing electrolyte is simultaneously applied through respective charged orifices to both sides of the workpiece. The workpiece is masked on its opposite sides with mirror imaged mask apertures having corresponding opposite-sided features in registration with each other.Each orifice through which the electrolyte is applied comprises an open groove in the surface of a block of polyvinal chloride material which groove extends in a vertical direction relative to the tank. The bottom of the groove is adjacent to a conductive plate.

Abstract: In through-mask electroetching of a metal film on top of an insulating substrate, the shape of the metal film being etched is a function of the mask opening, the spacing between the openings and the thickness of the mask. An analysis of the electric field around the mask and the metal film is used to determine conditions leading to the formation of islands of unetched metal films within the openings. The analysis is then used to design the mask pattern and eliminate these islands. The increase in the ratio of the mask thickness to the opening width for eliminating the islands also lowers the undercutting of the mask. Premature stoppage of the electroetching process arising from the isolation of the sample film from the contact is also addressed. The electrical contact to the sample is made at one end and a nozzle jet of electrolyte is slowly swept from the far end of the sample towards the electrical contact.

Abstract: A high speed electrochemical metal removal technique provides for planarization of multilayer copper interconnection in thin film modules. The process uses a neutral salt solution, is compatible with the plating process and has minimum safety and waste disposal problems. The process offers tremendous cost advantages over previously employed micromilling techniques for planarization.

Abstract: A method is provided for making a flexible primary battery suitable for microelectronics applications, and more particularly, for use with self-contained self-powered portable devices (SSPD) such as RF-ID tags. The method generally employs photolithography and etching techniques to minimize the thicknesses of metal foils required in the structure of the battery, as well as packaging methods which yield a flexible and durable battery having a thickness of not more than about 0.5 millimeter, and preferably about 0.3 millimeter or less, and a relatively small size on the order of a few square centimeters in surface area.

Abstract: A tool and process for electroetching metal films or layers on a substrate employs a linear electrode and a linear jet of electrolyte squirted from the electrode. The electrode is slowly scanned over the film by a drive mechanism. The current is preferably intermittent. In one embodiment a single wafer surface (substrate) is inverted and the jet is scanned underneath. In another embodiment wafers are held vertically on opposite sides of a holder and two linear electrodes, oriented horizontally and on opposite sides of the holder, are scanned vertically upward at a rate such that the metal layers are completely removed in one pass. The process is especially adapted for fabricating C4 solder balls with triple seed layers of Ti--W (titanium-tungsten alloy) on a substrate, phased Cr--Cu consisting of 50% chromium (Cr) and 50% copper (Cu), and substantially pure Cu. Solder alloys are through-mask electrodeposited on the Cu layer. The seed layers conduct the plating current.

Abstract: A nozzle is provided for use in electroetching a vertically oriented workpiece, comprising a housing having a top, sides, and bottom for creating a flow of etching solution on the workpiece, and means for shaping the flow of etching solution into a moving channel to improve etch uniformity of the workpiece.