Patents by Inventor Madhukar Bhaskara Rao
Madhukar Bhaskara Rao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130296215Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: ApplicationFiled: July 8, 2013Publication date: November 7, 2013Inventors: Madhukar Bhaskara RAO, Gautam BANERJEE, Thomas Michael Wieder, Yi-Chia LEE, Wen Dar LIU, Aiping WU
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Patent number: 8518865Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: GrantFiled: August 19, 2010Date of Patent: August 27, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Publication number: 20130130508Abstract: Texturing composition for texturing silicon wafers having one or more surfactants. Methods of texturing silicon wafers having the step of wetting said wafer with a texturing composition having one or more surfactants.Type: ApplicationFiled: May 18, 2012Publication date: May 23, 2013Applicant: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Madhukar Bhaskara Rao, Dnyanesh Chandrakant Tamboli
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Patent number: 8361237Abstract: The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide; wherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor. A method of using the formulation is also described.Type: GrantFiled: November 24, 2009Date of Patent: January 29, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Madhukar Bhaskara Rao, Eugene C. Baryschpolec
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Patent number: 8357646Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.Type: GrantFiled: February 27, 2009Date of Patent: January 22, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Wen Dar Liu, Yi Chia Lee, Archie Liao, Madhukar Bhaskara Rao, Matthew I. Egbe, Chimin Sheu, Michael Walter Legenza
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Publication number: 20120295447Abstract: Pre-texturing composition for texturing silicon wafers having one or more surfactants. Methods of texturing silicon wafers having the step of wetting said wafer with a pre-texturing composition having one or more surfactants followed by a texturing step.Type: ApplicationFiled: November 15, 2011Publication date: November 22, 2012Applicant: Air Products and Chemicals, Inc.Inventors: Dnyanesh Chandrakant Tamboli, Madhukar Bhaskara Rao, Aiping Wu
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Publication number: 20120009762Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.Type: ApplicationFiled: June 28, 2011Publication date: January 12, 2012Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Dnyanesh Chandrakant Tamboli, Rajkumar Ramamurthi, David Barry Rennie, Madhukar Bhaskara Rao, Gautam Banerjee, Gene Everad Parris
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Publication number: 20110212866Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: ApplicationFiled: August 19, 2010Publication date: September 1, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Patent number: 7977121Abstract: The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.Type: GrantFiled: November 17, 2006Date of Patent: July 12, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Dnyanesh Chandrakant Tamboli, Madhukar Bhaskara Rao, Mark Leonard O'Neill
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Publication number: 20110136717Abstract: The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.Type: ApplicationFiled: June 10, 2010Publication date: June 9, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Dnyanesh Chandrakant Tamboli, Madhukar Bhaskara Rao, Gautam Banerjee, Keith Randolph Fabregas
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Publication number: 20100152086Abstract: The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide; wherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor. A method of using the formulation is also described.Type: ApplicationFiled: November 24, 2009Publication date: June 17, 2010Applicant: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Madhukar Bhaskara Rao, Eugene C. Baryschpolec
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Publication number: 20100009517Abstract: Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.Type: ApplicationFiled: July 8, 2009Publication date: January 14, 2010Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Terence Quintin Collier, Charles A. Lhota, David Barry Rennie, Rajkumar Ramamurthi, Madhukar Bhaskara Rao, Dnyanesh Chandrakant Tamboli
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Publication number: 20090229629Abstract: The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.Type: ApplicationFiled: March 9, 2009Publication date: September 17, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Yi-Chia Lee, Wen Dar Liu, Archie Liao, Matthew I. Egbe, Madhukar Bhaskara Rao, Michael Walter Legenza, Chimin Sheu
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Publication number: 20090227483Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.Type: ApplicationFiled: February 27, 2009Publication date: September 10, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Wen Dar Liu, Yi Chia Lee, Archie Liao, Madhukar Bhaskara Rao, Matthew I. Egbe, Chimin Sheu, Michael Walter Legenza
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Patent number: 7446078Abstract: The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m2/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.Type: GrantFiled: July 9, 2002Date of Patent: November 4, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Chun Christine Dong, Madhukar Bhaskara Rao, Dingjun Wu
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Publication number: 20080118995Abstract: The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.Type: ApplicationFiled: November 17, 2006Publication date: May 22, 2008Inventors: Dnyanesh Chandrakant Tamboli, Madhukar Bhaskara Rao, Mark Leonard O'Neill
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Patent number: 7361316Abstract: A system for the purification and recycle of impure argon is disclosed herein. The system of the present invention can produce very high purity argon, i.e., about 1 ppb or less of impurities. In one embodiment, a cryogenic separation apparatus is used to remove the nitrogen, hydrocarbon, and hydrogen impurities from the argon stream. A catalyst bed is then operated at ambient temperature to remove hydrogen, oxygen, and carbon monoxide impurities to provide the purified argon product.Type: GrantFiled: August 24, 2004Date of Patent: April 22, 2008Assignee: Air Products and Chemicals, Inc.Inventor: Madhukar Bhaskara Rao
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Patent number: 7302812Abstract: A process for producing an isotopically enriched compound of a desired isotope includes (a) providing a cryogenic reaction zone containing a catalyst adapted to catalyze an isotope exchange reaction at a cryogenic reaction temperature, (b) feeding to the cryogenic reaction zone an enriched mixture comprising at least a compound containing the desired isotope, wherein the enriched mixture is enriched in the desired isotope above a natural abundance of the desired isotope, (c) reacting the enriched mixture in the cryogenic reaction zone thereby forming a resulting mixture containing the isotopically enriched compound, and (d) separating the resulting mixture into an enriched product which is enriched in the isotopically enriched compound and a depleted product which is depleted in the isotopically enriched compound.Type: GrantFiled: September 2, 2003Date of Patent: December 4, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Matthew Joseph Okasinski, David Ross Graham, Adam Adrian Brostow, Madhukar Bhaskara Rao
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Patent number: 7211553Abstract: A dense cleaning fluid for removing contaminants from a substrate and a method comprising same is disclosed herein. In one embodiment of the present invention, the dense cleaning fluid comprises a dense fluid and at least one acetylenic diol or acetylenic alcohol surfactant.Type: GrantFiled: December 16, 2003Date of Patent: May 1, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Hoshang Subawalla, Gene Everad Parris, Madhukar Bhaskara Rao, Christine Peck Kretz
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Patent number: 7074378Abstract: This invention describes an improvement in a process for purifying a nitrogen trifluoride (NF3) stream containing unreacted F2, HF, and nitrogen oxides from an NF3 reactor wherein the F2, and HF are removed and then the nitrogen oxides removed by adsorption. The improvement in the process resides in selectively removing the F2 from said NF3 stream without generating oxygen difluoride, removing HF and then removing said nitrogen oxides by adsorption. Further purification can be effected as desired.Type: GrantFiled: January 23, 2004Date of Patent: July 11, 2006Assignee: Air Products and Chemicals, Inc.Inventors: James Joseph Hart, Philip Bruce Henderson, Howard Paul Withers, Jr., Madhukar Bhaskara Rao, Hoshang Subawalla