Patents by Inventor Mahalingam Venkatesan
Mahalingam Venkatesan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9263078Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: GrantFiled: September 17, 2013Date of Patent: February 16, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Steven Verhaverbeke, Omkaram Nalamasu, Majeed A. Foad, Mahalingam Venkatesan, Nety M. Krishna
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Publication number: 20140083363Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: ApplicationFiled: October 7, 2013Publication date: March 27, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Omkaram NALAMASU, Steven VERHAVERBEKE, Majeed A. FOAD, Mahalingam VENKATESAN, Nety M. KRISHNA
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Publication number: 20140017518Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: ApplicationFiled: September 17, 2013Publication date: January 16, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Steven VERHAVERBEKE, Omkaram NALAMASU, Majeed A. FOAD, Mahalingam VENKATESAN, Nety M. KRISHNA
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Patent number: 8551578Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: GrantFiled: October 22, 2008Date of Patent: October 8, 2013Assignee: Applied Materials, Inc.Inventors: Omkaram Nalamasu, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
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Patent number: 8535766Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: GrantFiled: October 22, 2008Date of Patent: September 17, 2013Assignee: Applied Materials, Inc.Inventors: Steven Verhaverbeke, Omkaram Nalamasu, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
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Publication number: 20100098873Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: ApplicationFiled: October 22, 2008Publication date: April 22, 2010Inventors: STEVEN VERHAVERBEKE, Omkaram Nalamasu, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
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Publication number: 20100096256Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: ApplicationFiled: October 22, 2008Publication date: April 22, 2010Inventors: OMKARAM NALAMASU, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
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Publication number: 20090199768Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic.Type: ApplicationFiled: February 12, 2008Publication date: August 13, 2009Inventors: Steven Verhaverbeke, Nety M. Krishna, Omkaram Nalamasu, Mahalingam Venkatesan
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Publication number: 20090201722Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic.Type: ApplicationFiled: January 16, 2009Publication date: August 13, 2009Inventors: Kamesh Giridhar, Omkaram Nalamasu, Steven Verhaverbeke, Mahalingam Venkatesan
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Publication number: 20030092266Abstract: A system for supplying processing fluid to a substrate processing chamber. The system consists of a number of fluid storages each which stores a separate processing fluid; at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus; and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall of the chamber into a mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone. Typically at least two of the fluid passages are vertically displaced from one another to, at least partially, define upper and lower fluid flow paths.Type: ApplicationFiled: January 3, 2003Publication date: May 15, 2003Inventors: Roger N. Anderson, H. Peter W. Hey, David K. Carlson, Mahalingam Venkatesan, Norma Riley
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Patent number: 6500734Abstract: A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.Type: GrantFiled: June 2, 1999Date of Patent: December 31, 2002Assignee: Applied Materials, Inc.Inventors: Roger N. Anderson, Peter W. Hey, David K. Carlson, Mahalingam Venkatesan, Norma Riley
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Patent number: 6402850Abstract: A barrier to prevent reactant gases from reaching the surfaces of a susceptor support for a substrate upon which polysilicon films are to be deposited provides improved uniformity of the depositing film across the substrate, and prevents substrate-to-substrate variations during sequential depositions. A suitable barrier includes a preheat ring extension that mates with an extension of the susceptor support.Type: GrantFiled: September 2, 1994Date of Patent: June 11, 2002Assignee: Applied Materials, Inc.Inventors: Israel Beinglass, Mahalingam Venkatesan, Christian M. Gronet
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Patent number: 6284650Abstract: A method of forming a silicide on a silicon layer. First, a monosilane based tungsten-silicide layer is formed on the silicon layer. Next, a dichlorosilane based tungsten-silicide layer is formed on the monosilane based tungsten-silicide layer.Type: GrantFiled: November 13, 1997Date of Patent: September 4, 2001Assignee: Applied Materials, Inc.Inventors: Cory M. Czarnik, Vedapuram S. Achutharaman, Mahalingam Venkatesan, Klaus-Dieter Rinnen
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Patent number: 6146464Abstract: An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.Type: GrantFiled: June 30, 1997Date of Patent: November 14, 2000Assignee: Applied Materials, Inc.Inventors: Israel Beinglass, Mahalingam Venkatesan, Roger N. Anderson
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Patent number: 6113703Abstract: A method and apparatus for processing opposing surfaces of a wafer. In one embodiment a semiconductor processing chamber is provided having an opening which allows for insertion of a wafer. A wafer holder is located within the semiconductor processing chamber for receiving the wafer. An inlet port allows flow of gas into the semiconductor processing chamber. An outlet port allows flow of gas from the semiconductor processing chamber. A first heat plate is mounted within the semiconductor processing chamber so that a first face of a wafer, when held by the wafer holder, faces towards the first heat plate. A first heat source is located to heat the first heat plate. A second heat plate is mounted in position within the semiconductor processing chamber so that a second face of the wafer, opposing the first face, faces towards the second heat plate. A second heat source is located to heat the second heat plate.Type: GrantFiled: November 25, 1998Date of Patent: September 5, 2000Assignee: Applied Materials, Inc.Inventors: Roger N. Anderson, Seiji Arima, Mahalingam Venkatesan, Kunio Kurihara
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Patent number: 5932286Abstract: Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at between about 5 and about 100 Torr. Deposition rates of up to about 185 angstroms per minute are readily achieved.Type: GrantFiled: March 16, 1993Date of Patent: August 3, 1999Assignee: Applied Materials, Inc.Inventors: Israel Beinglass, Mahalingam Venkatesan
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Patent number: 5916369Abstract: A system of supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.Type: GrantFiled: June 7, 1995Date of Patent: June 29, 1999Assignee: Applied Materials, Inc.Inventors: Roger N. Anderson, Peter W. Hey, David K. Carlson, Mahalingam Venkatesan, Norma Riley
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Patent number: 5863598Abstract: A method of forming a doped silicon film on a substrate. According to the present invention, a substrate is placed in a reaction chamber and heated. Next, a silicon containing gas is fed into the reaction chamber to produce a silicon containing gas partial pressure of between 4 and 20 torr.Type: GrantFiled: April 12, 1996Date of Patent: January 26, 1999Assignee: Applied Materials, Inc.Inventors: Mahalingam Venkatesan, Shulin Wang, Vedapuram S. Achutharaman
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Patent number: 5834059Abstract: The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.Type: GrantFiled: March 27, 1996Date of Patent: November 10, 1998Assignee: Applied Materials, Inc.Inventors: Roger N. Anderson, H. Peter W. Hey, Israel Beinglass, Mahalingam Venkatesan
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Patent number: 5725673Abstract: The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. An exhaust passage formed through the side wall and is coupled to an upper passage which extends to the upper portion of the deposition chamber and is coupled to a lower passage which extends to the lower portion of the deposition chamber.Type: GrantFiled: September 25, 1996Date of Patent: March 10, 1998Assignee: Applied Materials Inc.Inventors: Roger N. Anderson, H. Peter W. Hey, Israel Beinglass, Mahalingam Venkatesan