Abstract: A comparator circuit having reduced pulse width distortion includes a differential amplifier operative to receive at least first and second signals and to amplify a difference between the first and second signals. The differential amplifier generates a difference signal at an output thereof which is a function of the difference between the first and second signals. An output stage is included in the comparator circuit for receiving the difference signal and for generating an output signal of the comparator circuit, the output signal being representative of the difference signal, the output stage having a switching point associated therewith. The comparator circuit further includes a voltage source coupled to the output of the differential amplifier. The voltage source is operative to generate a reference signal for establishing a common-mode voltage of the difference signal generated by the differential amplifier.

Abstract: A bias circuit includes a reference generator for generating a bias signal at an output of the reference generator. The reference generator is selectively operable a first mode or a second mode in response to a first control signal applied to the reference generator, wherein in the first mode of operation, the reference generator is disabled, and in the second mode of operation, the reference generator is operative to generate the bias signal. The bias circuit further includes a shunt circuit connected to the reference generator. The shunt circuit is configured to provide a source of current to assist in charging the output of the reference generator to a quiescent operating level during the second mode of operation. The shunt circuit, in response to a second control signal applied thereto, is operable for a selected period time after the reference generator transitions from the first mode of operation to the second mode of operation.

Abstract: A voltage level translator circuit for translating an input signal referenced to a first voltage level to an output signal referenced to a second voltage level includes an input stage for receiving the input signal. The input stage includes at least one transistor device having a first threshold voltage associated therewith. The voltage level translator circuit further includes a latch circuit operative to store a signal representative of a logical state of the input signal. The latch circuit includes at least one transistor device having a second threshold voltage associated therewith, the second threshold voltage being greater than the first threshold voltage. A voltage clamp is operatively connected between the input stage and the latch circuit, the voltage clamp being configured to limit a voltage across the input stage based, at least in part, on a control signal presented thereto.

Abstract: A semiconductor resistor circuit having a controllable resistance associated therewith includes a plurality of resistor segments connected in a series and/or parallel configuration. The resistor circuit further includes a plurality of switches controlling connection of respective ones of the resistor segments to the resistor circuit, to thereby selectively control a resistance of the resistor circuit in response to respective control signals presented to the switches. The resistor circuit is selectively controllable in discrete resistance intervals, the resistance intervals being unequal to one another. The resistor segments have resistance values that are selected such that a percentage resistance variation across each of the respective resistance intervals as a function of process, voltage and/or temperature conditions to which the resistor circuit is subjected is substantially the same.

Abstract: A low voltage, 5V tolerant open drain output buffer having moderate current tolerance capabilities is formed with 3.3V technology using a nominal power supply of 2.5V or less. The buffer includes an inverter, a series connection of the current paths of three n-channel FET transistors, and a backgate bias generator. One terminal of the series connection of three transistors is connected to a PAD, and the other terminal of the lower transistor of the series is connected to ground. The bias generator is formed using two p-channel field effect transistors (FETs) that are cross-connected between VDD and the PAD. A gate of a central one of the three transistors is connected to the power supply. An output of the bias generator is connected to a gate of the upper transistor. The inventive buffer may be manufactured using standard 3.3V processes, but functions with a power supply of, e.g., 2.5V or 1.8V.

Abstract: A voltage level translator circuit for translating an input signal referenced to a first voltage level to an output signal referenced to a second voltage level includes an input stage for receiving the input signal. The input stage includes at least one transistor device having a first threshold voltage associated therewith. The voltage level translator circuit further includes a latch circuit operative to store a signal representative of a logical state of the input signal. The latch circuit includes at least one transistor device having a second threshold voltage associated therewith, the second threshold voltage being greater than the first threshold voltage. A voltage clamp is operatively connected between the input stage and the latch circuit, the voltage clamp being configured to limit a voltage across the input stage based, at least in part, on a control signal presented thereto.

Abstract: Using at best a 2.5V nominal power supply, 3.3V technology can be used to implement a 5V tolerant open drain output buffer. High voltage and/or current tolerance is achieved with only the 2.5V power supply. A p-channel FET transistor is connected between a power supply and a node, which in turn is connected to a node between two series output FET transistors. The first transistor is connected between the PAD and node, and the second transistor is connected between the node and ground. The gate of the second transistor is driven from another node formed between a series string of a p-channel FET transistor and an n-channel FET transistor. The other side of the first transistor is connected to the power supply, and the other side of the second transistor is connected to ground. The gates of the transistors of the inverter are tied together and driven by an applied signal.

Abstract: Using at best a 2.5V nominal power supply, 3.3V technology can be used to implement a 5V tolerant open drain output buffer. High voltage and/or current tolerance is achieved with only the 2.5V power supply. A p-channel FET transistor is connected between a power supply and a node, which in turn is connected to a node between two series output FET transistors. The first transistor is connected between the PAD and node, and the second transistor is connected between the node and ground. The gate of the second transistor is driven from another node formed between a series string of a p-channel FET transistor and an n-channel FET transistor. The other side of the first transistor is connected to the power supply, and the other side of the second transistor is connected to ground. The gates of the transistors the inverter are tied together and driven by an applied signal.

Abstract: A low voltage, 5V tolerant open drain output buffer having moderate current tolerance capabilities is formed with 3.3V technology using a nominal power supply of 2.5V or less. The buffer includes an inverter, a series connection of the current paths of three n-channel FET transistors, and a backgate bias generator. One terminal of the series connection of three transistors is connected to a PAD, and the other terminal of the lower transistor of the series is connected to ground. The bias generator is formed using two p-channel field effect transistors (FETs) that are cross-connected between VDD and the PAD. A gate of a central one of the three transistors is connected to the power supply. An output of the bias generator is connected to a gate of the upper transistor. The inventive buffer may be manufactured using standard 3.3V processes, but functions with a power supply of, e.g., 2.5V or 1.8V.

Abstract: A compensation circuit comprises a reference circuit including a reference NMOS device and a reference PMOS device. The reference circuit is operative to generate a first reference signal and a second reference signal, the first reference signal being a function of at least one of a process characteristic, a voltage characteristic and a temperature characteristic of the reference NMOS device, and the second reference signal being a function of at least one of a process characteristic, a voltage characteristic and a temperature characteristic of the reference PMOS device. The compensation circuit further comprises a control circuit connected to the reference circuit.

Abstract: An apparatus is disclosed for translating a lower voltage signal, utilized in a low voltage integrated circuit, to a higher voltage signal suitable for use in a high voltage circuit. The apparatus includes a low voltage transistor assembly capable of operating in response to the lower voltage signal; a voltage regulator which is configured to limit an applied voltage across the low voltage transistor assembly; and a high voltage converter which is responsive to the operation of the low voltage transistor assembly to generate the higher voltage signal. The voltage regulator includes a reference voltage generator and a voltage limiter.

Abstract: An apparatus is disclosed for translating a lower voltage signal, utilized in a low voltage integrated circuit, to a higher voltage signal suitable for use in a high voltage circuit. The apparatus includes a low voltage transistor assembly capable of operating in response to the lower voltage signal; a voltage regulator which is configured to limit an applied voltage across the low voltage transistor assembly; and a high voltage converter which is responsive to the operation of the low voltage transistor assembly to generate the higher voltage signal. The voltage regulator includes a reference voltage generator and a voltage limiter.

Abstract: An integrated circuit includes a controlled impedance that remains relatively constant with respect to variations in processing and temperature. The controlled impedance comprises a fixed resistor in parallel with one or more switchable resistors having a resistance value greater than that of the fixed resistance. Control circuitry includes a reference current generator. The reference current is flowed through a tracking resistor formed of the same material (e.g., doped polysilicon) in the same fabrication process as the fixed resistor. Comparators are used to monitor the voltage across the tracking resistor, and control the switching of the switchable resistors in order to obtain a desired effective resistance. Use of the inventive technique to provide a transmission line termination impedance is described in an illustrative embodiment.

Abstract: Embodiments of the invention include an amplifier such as a differential amplifier having an improved common mode voltage range (CMVR). The amplifier includes a translator coupled to a second stage amplifying circuitry wherein the translator uses feedback and a parallel connection of input devices to improve the common mode voltage range of the amplifier while providing for enablement of the circuit functionality. The translator uses parallel connections of N-channel and P-channel devices such as transistors to extract alternating current (ac) signals riding on a common mode voltage and to translate the extracted ac signals to ride on a constant reference voltage (V.sub.ref). The translated signals are then amplified in a conventional manner, such as by a gate thresholding or a self-biasing technique. An input sensing circuit within the translator provides an offset detection signal to a correction circuit, also within the translator.

Abstract: A low voltage CMOS input buffer protection circuit that is used to protect an input buffer from any high voltage signal (e.g., 5 V) that may appear along a signal bus. The protection circuit is also "hot-pluggable", meaning that the protection circuit will not draw any current when not powered (i.e., when VDD is not present). The circuit includes a CMOS transmission gate and utilizes on-chip generated reference voltages to provide the necessary protection.

Abstract: A CMOS high voltage drive output buffer that protects the drive stage from seeing relatively high voltages (e.g., 5 V) during "hot pluggable" conditions (that is, when the reference voltage VDD is not present). A transmission gate and clamping transistors are disposed around the output devices to provide the requisite protection. A backgate bias generator for use with P-channel devices is also disclosed that is capable of withstanding "hot pluggable" conditions.

Abstract: A CMOS voltage generator for providing a reference voltage VDD2 that will track the low level power supply voltage VDD (approximately 3.0V-3.6V) as long as the power supply is present. When VDD is not present (defined as at "hot pluggable" condition), the voltage generator is configured to maintain a "protection" output voltage less than the relatively high voltage (approximately 5V) that may appear along a circuit signal bus. In particular, the circuit includes at least a pair of diode-connected N-channel devices disposed between the signal bus line and the output voltage terminal to provide the necessary protection.

Abstract: A low voltage CMOS output buffer protection circuit is configured to protect an associated output buffer from any high voltage signals (e.g., 5V) that may appear along a signal bus line. The protection circuit is also "hot-pluggable", meaning that the protection circuit will not draw any current when not powered (i.e., when VDD is not present). An on-chip reference voltage generator is used to provide a reference voltage VDD2 that will be essentially equal to VDD as long as VDD is present. When VDD is not present, VDD2 will track the signal appearing along the signal bus (PAD), remaining at least two diode drops below the PAD voltage.

Abstract: A current source includes a first current mirror and a second current mirror that share a common current path. The current in the common current path mirrors a current of a current reference connected to the first current mirror. A current in an output current path of the second current mirror mirrors the current of the common current path. A first feedback loop controls the current in the common current path and a second feedback loop matches a voltage of the common current path with an output voltage. The cooperation of the first and second feedback loops ensures that the output current replicates the current of the current reference even when an voltage of the current source is close to the supply voltage. Thus, the voltage swing of the current source output voltage is increased and a precision current source is provided even when the output voltage is close to the supply voltage.