Abstract: A semiconductor device is comprised of a first wire that has a plurality of via holes formed in the vicinity of an end thereof and that is connected to a conductor of a different layer through the via holes, and a plurality of slits that are provided parallel to the direction in which the first wire extends and that split the first wire into a plurality of second wires over a predetermined distance from the end thereof.

Abstract: A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is-formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers.

Abstract: There is disclosed a wiring structure for a semiconductor device being excellent in the resistance against electromigration and being able to lengthen a life of the wiring. The wiring structure is comprised of a refractory metal layer and an aluminum alloy layer being stacked on the refractory metal layer. The wiring structure contains a compound layer produced between the refractory metal layer and the aluminum alloy layer. The refractory metal layer is parted in the extended direction of the wiring to prevent the compound layer produced between the refractory metal layer and the aluminum alloy layer from being ranged in the extended direction of the wiring. A length of an interval between the parted refractory metal layer portions is set to exceed a value being twice as large as a thickness of the compound layer. This prevents the compound layer growing between faces of refractory metal layer portion being opposite to each other being ranged each other.

Abstract: A semiconductor device is comprised of a first wire that has a plurality of via holes formed in the vicinity of an end thereof and that is connected to a conductor of a different layer through the via holes, and a plurality of slits that are provided parallel to the direction in which the first wire extends and that split the first wire into a plurality of second wires over a predetermined distance from the end thereof.

Abstract: A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as DC magnetron sputtering, RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers.