Abstract: One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

Abstract: One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode.

Abstract: A crystal oscillator for surface mounting comprising: a case main body including concave portions on both principal surfaces; a crystal element hermetically encapsulated in one concave portion; an IC chip housed in the other concave portion; mounting terminals provided on four corner portions of an opening end face of the other concave portion; and a protrusion serving as identifying marks along a direction of sides of the case main body and provided in some of the mounting terminals. The mounting terminals, to which the protrusions are provided, are provided on both corner portions on one end side of the case main body. The protrusions extend in a same direction from the mounting terminals at an inner or outer circumference side of the opening end face. The mounting terminals including the protrusions are symmetric with respect to a center line between both corner portions on the one end side.

Abstract: The present invention provides a temperature controlled oscillator capable of detecting the surrounding temperature at a high level of precision, and obtaining stable oscillating frequencies. The temperature controlled oscillator of the invention is provided with a circuit substrate having a crystal resonator, an oscillating circuit, and a temperature control circuit, arranged on one or both principal surfaces, and a container main body that accommodates the circuit substrate and has mount terminals on an outer bottom surface thereof. The temperature control circuit includes at least a first temperature sensor that detects an operating temperature of the crystal resonator, a second temperature sensor that detects a surrounding temperature of the container main body, and a heating resistor that applies heat to the crystal resonator, and lead wires extend from the circuit substrate and are connected electrically to the mount terminals.

Abstract: One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode.

Abstract: One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

Abstract: A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

Abstract: The present invention relates to a two-level mounting board in which a second substrate is supported horizontally by a metal pin above a first substrate having a mounting electrode on an outer base surface, the free, lower end of the metal pin is inserted in a hole provided in the surface of the first substrate, and the metal pin is affixed by solder to an annular electrode land provided on the surface of the first substrate to form an outer periphery of the hole, wherein part of the ring of the annular electrode land is cut away to open the same. This provides a two-level mounting board in which metal pins can be connected reliably to the first substrate to support the second substrate horizontally, and a crystal oscillator using the same.

Abstract: The present invention provides an amphiphilic molecule having a plurality of zwitterionic functional groups in its hydrophilic moiety and a molecular assembly comprising the amphiphilic molecule as a constituent lipid. According to a preferred embodiment of the present invention, the molecular assembly of the present invention forms a stable vesicular structure under a physiological pH environment to carry a substance of interest in the vesicular structure, and can release the substance of interest to the outside of the vesicular structure when it is deformed under an acidic pH environment. The molecular assembly of the present invention can be used as a carrier for a drug, a probe, a nucleic acid, a protein or the like.

Abstract: One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

Abstract: One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.

Abstract: A lead wire led-out type crystal oscillator of constant temperature type for high stability is disclosed, which includes a heat supply body that supplies heat to a crystal resonator from which a plurality of lead wires are led out, to maintain the temperature constant. The heat supply body includes a heat conducting plate which has through-holes for the lead wires and is mounted on the circuit board, and which faces, and is directly thermally joined to, the crystal resonator and a chip resistor for heating which is mounted on the circuit board adjacent to the heat conducting plate, and is thermally joined to the heat conducting plate.

Abstract: One embodiment of the present invention is a method for manufacturing a bottom gate type thin film transistor having a gate electrode, a gate insulating film, an oxide semiconductor active layer, a source electrode and a drain electrode on a flexible plastic substrate of a supporting substrate, the method including continuously forming the gate insulating film and the oxide semiconductor active layer on the flexible plastic substrate with the gate electrode inside a vacuum film formation chamber of a film formation apparatus, the apparatus being a type of winding up continuously the roll-shaped substrate, and the gate insulating film and the oxide semiconductor active layer formed without being exposed to air.

Abstract: A constant-temperature type crystal oscillator includes: a crystal unit; an oscillator output circuit; a temperature control circuit; and a circuit substrate, on which circuit elements are installed. A principal surface of the crystal unit is installed so as to face one side board plane of the circuit substrate with interposing a first heat conducting resin, and the heating resistors are installed to be thermally coupled to the crystal unit via a second heat conducting resin. The principal surface of the crystal unit adheres to the one side board plane of the circuit substrate with interposing the first heat conducting resin. The heating resistors are installed on the one side board plane of the circuit substrate so as to sandwich the lead wires including a portion between the pair of lead wires of the crystal unit, and the heating resistors surround an outer circumference of the crystal unit.

Abstract: A constant-temperature type crystal oscillator includes: a crystal unit including a case main body, in which two crystal terminals and two dummy terminals are provided on an outer bottom face thereof, and a crystal element housed in the case main body; an oscillator output circuit including an oscillating stage and a buffering stage; a temperature control circuit for keeping an operational temperature of the crystal unit; and a circuit substrate, on which circuit elements of the crystal unit, the oscillator output circuit and the temperature control circuit are installed. The temperature control circuit includes: heating chip resistors; a power transistor; and a temperature sensing element. The dummy terminals are connected to a circuit terminal for dummy on the circuit substrate. The circuit terminal for dummy is connected to an electrically-conducting path, to which one terminal of the heating chip resistors is electrically connected, on the circuit substrate.

Abstract: One embodiment of the present invention is a method for manufacturing a bottom gate type thin film transistor having a gate electrode, a gate insulating film, an oxide semiconductor active layer, a source electrode and a drain electrode on a flexible plastic substrate of a supporting substrate, the method including continuously forming the gate insulating film and the oxide semiconductor active layer on the flexible plastic substrate with the gate electrode inside a vacuum film formation chamber of a film formation apparatus, the apparatus being a type of winding up continuously the roll-shaped substrate, and the gate insulating film and the oxide semiconductor active layer formed without being exposed to air.

Abstract: It is an object of the present invention to provide an enzyme preparation which is excellent in stability in blood (blood residence) and in transfer to a target organ (targeting property), and can be used effectively in enzyme replacement therapy or the like. This problem is solved by a lipid vesicle composition wherein vesicles composed of a lipid bilayer membrane are encapsulating an enzyme, the composition being capable of retaining stably the activity of the enzyme even outside the stable pH range of the enzyme.

Abstract: One embodiment of the present invention is a display device being visible from both sides, including a substantially transparent semiconductor circuit having a substantially transparent thin film transistor on one surface of a substantially transparent substrate and a wiring made of a substantially transparent conductive material, the wiring having an electric contact point electrically connected to the transistor, and a display element being driven by the semiconductor circuit.

Abstract: One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

Abstract: To attain a method of producing a lithium phosphate sintered body and a sputtering target capable of providing a high-density bulk body with no macro-size internal defect, the present invention provides a method of producing a lithium phosphate sintered body, including the steps of: calcining raw material powder of Li3PO4 at a temperature set to be 650° C. or more and less than 850° C.; pulverizing and sieving the calcined raw material powder; and sintering the sieved raw material powder to a predetermined shape. By setting a calcining temperature of the raw material powder to be 650° C. or more and less than 850° C., moisture absorbed into the raw material powder is effectively removed and generation of macro-size internal defects in the resultant bulk (sintered) body is suppressed. When the calcining temperature is less than 650° C., calcining processing is insufficient, so generation of macro-size internal defects cannot be suppressed effectively.