Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: Provided is a heat treatment apparatus capable of more reliably conveying a workpiece along a desired conveyance path by a simple configuration. A heat treatment apparatus 1 includes a heating chamber 7, a cooling chamber 8 disposed adjacent to the heating chamber 7, a conveyance tray 2 to support the workpiece 100, and a first conveyance mechanism 3 to convey the conveyance tray 2 along a conveyance path B1 from the outside of the heating chamber 7 to the outside of the cooling chamber 8 through the heating chamber 7 and the cooling chamber 8.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A heat treatment apparatus 1 includes a coolant passage defining body 42 to define a coolant passage 48 to supply a coolant to a workpiece 100. The coolant passage defining body 42 includes an upper member 50 and a lower member 40 as a plurality of coolant passage defining members, and is configured so that, by displacing these members 49 and 50 so as to approach each other along an up-down direction Z1 crossing a conveyance direction, the coolant passage 48 is defined in a state housing the workpiece 100. In addition, the coolant passage defining body is configured so that, by displacing the members 49 and 50 described above so as to separate from each other along the up-down direction Z1, the workpiece 100 is allowed to be let into and out of the coolant passage 48 along the conveyance direction A1.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: According to one embodiment, a housing includes a first accommodator and a second accommodator separated by a partition wall which has an opening in a portion thereof. A contact mechanism includes a fixed contact plate and a common terminal, accommodated in the first accommodator, and a movable contact arm placed on the common terminal to be contactable to the fixed contact plate. The operator includes a slider, a button, and a substantially spherical stopper. The slider includes one end portion inserted in the opening so as to be slidable on the movable contact arm. The button is provided in the other end portion of the slider, and the stopper is provided between the one end portion and the other end portion of the slider. The O-ring is provided on the partition wall around the opening, and the stopper is brought into contact with the O-ring.

Abstract: A fluid pressure valve according to an embodiment of the present invention is applicable to a fluid pressure servo mechanism. The fluid pressure valve includes a housing having a housing member, the housing member being formed integrally so as to have a first port, a second port, and a flow path connecting between the first port and the second port.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: Provided is a heat treatment apparatus capable of more reliably conveying a workpiece along a desired conveyance path by a simple configuration. A heat treatment apparatus 1 includes a heating chamber 7, a cooling chamber 8 disposed adjacent to the heating chamber 7, a conveyance tray 2 to support the workpiece 100, and a first conveyance mechanism 3 to convey the conveyance tray 2 along a conveyance path B1 from the outside of the heating chamber 7 to the outside of the cooling chamber 8 through the heating chamber 7 and the cooling chamber 8.

Abstract: A lock member includes a fit portion, an inclined portion and a contacting portion. The fit portion is fitted with a projecting portion of a trigger to maintain an off-lock state. The inclined portion is brought into contact with a shaft of an unlock button and moves the lock member to release the off-lock state. The projecting portion is slidable on the contacting portion and maintains an on state.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: Provided is a heat treatment apparatus capable of being configured to be more compact. A heat treatment apparatus 1 includes a coolant passage defining body 42 to define a coolant passage 48 to supply a coolant to a workpiece 100. The coolant passage defining body 42 includes an upper member 50 and a lower member 40 as a plurality of coolant passage defining members, and is configured so that, by displacing these members 49 and 50 so as to approach each other along an up-down direction Z1 crossing a conveyance direction, the coolant passage 48 is defined in a state housing the workpiece 100. In addition, the coolant passage defining body is configured so that, by displacing the members 49 and 50 described above so as to separate from each other along the up-down direction Z1, the workpiece 100 is allowed to be let into and out of the coolant passage 48 along the conveyance direction A1.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: According to one embodiment, A level shifter includes a first circuit configured to generate a first signal, the first signal being inverted and delayed signal of a second signal, a NAND circuit including a first input terminal and a second input terminal, the second signal being input to the first terminal, the first signal being input to the second terminal, a first transistor, a first voltage being applied to a first terminal of the first transistor, a second terminal of the first transistor being connected to a third input terminal of the NAND circuit, a third signal which inverts the second signal being applied to a gate of the first transistor, a second transistor, a second voltage being applied to a first terminal of the second transistor, the second voltage being higher than the first signal, a gate of the second transistor being connected to an output terminal, a third transistor, the second voltage being applied to a first terminal of the third transistor, a second terminal of the third transistor b