Abstract: A method of emanating a sound from a vehicle comprising detecting an accelerator state, a brake state, and a transmission state of the vehicle, and emanating a take-off sound. The take-off sound includes changing emanation of a sound profile from a first sound pressure level to a second sound pressure level that is greater than the first sound pressure level, upon first detecting the accelerator state transitioned from an accelerator released state to an accelerator depressed state while the brake state indicates the brake released state and the transmission state indicates a motive state.

Abstract: A method of emanating a sound from a vehicle comprising detecting a speed of the vehicle, and emanating a speed sound, including emanating a sound profile and changing at least one of a sound pressure level and a pitch of the sound profile in relation to the speed of the vehicle changing. The method further comprises ceasing emanation of the speed sound upon the speed of the vehicle increasing from below a first threshold to above the first threshold, and resuming emanation of the speed sound upon the speed of the vehicle decreasing from above a second threshold to below the second threshold, the second threshold being less than the first threshold.

Abstract: A memory system includes a memory device, and a controller which controls the memory device. The memory device includes a plurality of memory cells capable of rewriting data, a plurality of word lines connected to the plurality of memory cells, a page including the plurality of memory cells connected to the same word line, a plane including a plurality of pages, a memory cell array including a plurality of planes, and a plurality of word line drivers which apply voltages to the plurality of word lines, and a plurality of switches provided for each plane and which assigns the word line drivers to the word lines.

Abstract: Plasma etching is performed while suppressing bowing during etching of a multi-layer film. The plasma etching is performed multiple times using a processing gas containing HBr gas and C4F8 gas, and the etching gradually forms recesses from a SiN layer through a laminated film. By adding a gas containing boron to the processing gas during the etching at a predetermined timing and at a predetermined flow ratio while etching the laminated film, a protective film is formed on side walls of the SiN layer that are exposed to the recess.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A method of emanating a sound from a vehicle includes detecting a transmission state and a brake state of the vehicle and determining whether a vehicle movement state indicates intent to move the vehicle from a stationary state based on the transmission state and the brake state. The method further includes emanating the sound when the vehicle movement state indicates intent to move the vehicle, and refraining from emanating the sound when the vehicle is in the stationary state and the vehicle movement state fails to indicate intent to move the vehicle.

Abstract: A semiconductor memory device is provided with a plurality of memory cells connected to a plurality of word lines, a word-line leakage detector configured to detect a leakage current generated on at least one of the plurality of word lines, and a controller configured, when a leakage current is detected by the word-line leakage detector, to determine that a block including a memory cell connected to a word line through which the leakage current is flowing is defective. The word-line leakage detector has a detection voltage generator configured to generate a detection voltage in accordance with the leakage current, a comparator configured to generate a flag signal having output logic that is inverted depending on whether the detection voltage exceeds a predetermined threshold voltage, and an adjuster configured to adjust a current amount by diverting part of the leakage current in accordance with an ambient temperature.

Abstract: One object is to shorten the time required for a terminal to display a screen including images. A server according to an embodiment includes: a storage unit for storing information; and a display control unit for causing, in response to a display request for displaying the screen from the terminal, the terminal to display the screen including the images corresponding to the image files by using the image files stored on the storage of the terminal or the image files stored on the storage of the server selected in accordance with a predetermined selection condition based at least on the throughput of the terminal and the communication capacity between the server and the terminal.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A motion device (1) includes a track rail (10), a moving body (21), a plurality of rolling elements (70) rolling in an endless circulation passage formed at the track rail (10) and the moving body (21), a pair of lid bodies (50) attached to end surfaces of the moving body (21) in a movement direction thereof, and a connector cover body (80) disposed along a rolling element rolling surface (28) formed at the moving body (21) to cover a rolling element connector (72) connecting and holding the rolling elements (70). The connector cover body (80) has a frame-shaped cover member (86) which is fixed to the pair of the lid bodies (50) to be integrally disposed at both ends of the rolling element rolling surface (28) in a width direction thereof.

Abstract: A motion guide device includes a plurality of rolling element guide members provided along the entire length of a rolling element rolling surface so as to guide the unloaded side of a plurality of rolling elements that perform a rolling movement under load between the rolling element rolling surface and a loaded rolling element rolling surface. The rolling element guide member includes a beam member an outer member including a rolling element guide surface for guiding the unloaded side of the rolling elements, and the beam member and the outer member are insert-molded. Such a structure provides the motion guide device including the rolling element guide member that enables low cost manufacturing of a complex shape and capability of secure installation and guidance of the rolling elements with no deflection and can be adapted for use in various types by optionally selecting a connecting means.

Abstract: A semiconductor memory device is provided with a plurality of memory cells connected to a plurality of word lines, a word-line leakage detector configured to detect a leakage current generated on at least one of the plurality of word lines, and a controller configured, when a leakage current is detected by the word-line leakage detector, to determine that a block including a memory cell connected to a word line through which the leakage current is flowing is defective. The word-line leakage detector has a detection voltage generator configured to generate a detection voltage in accordance with the leakage current, a comparator configured to generate a flag signal having output logic that is inverted depending on whether the detection voltage exceeds a predetermined threshold voltage, and an adjuster configured to adjust a current amount by diverting part of the leakage current in accordance with an ambient temperature.

Abstract: A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and a photoresist layer to form a step-shaped structure is provided. The step-shaped structure is formed by repeatedly performing a first step of plasma-etching the first film by using the photoresist layer as a mask, a second step of exposing the photoresist layer formed on the substrate to a plasma generated from a processing gas containing argon gas and hydrogen gas by applying a high frequency power to a lower electrode while applying a negative DC voltage to an upper electrode, a third step of trimming the photoresist layer, and a fourth step of plasma-etching the second film.

Abstract: A manufacturing method of a semiconductor manufacturing apparatus is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly stacked on a substrate, and forming a hole with a predetermined shape in the multilayer film. The manufacturing method includes a first step of etching the multilayer film to a first depth using a gas mixture containing a CF based gas at a first flow rate and a bromine-containing gas, a chloride-containing gas, and/or an iodine-containing gas; a second step of etching the multilayer film to a second depth after the first step using a gas mixture containing the CF based gas at a second flow rate and the bromine-containing gas, the chloride-containing gas, and/or the iodine-containing gas; and a third step for over etching the multilayer film after the second step until the hole reaches a base layer.

Abstract: A rotary dresser includes a cored bar, an electroformed layer, and superabrasive grains fixed to an outer circumferential surface of the electroformed layer, and a plurality of island regions in which a plurality of superabrasive grains is gathered is provided at certain intervals. Since a plurality of the island regions in which a plurality of the superabrasive grains is gathered is provided at certain intervals, the same degree of dressing accuracy can be obtained as in a case in which expensive large superabrasive grains are fixed at a low density using cheap and small superabrasive grains, it is possible to decrease the contact area of a single superabrasive grain, and favorable cutting quality can be obtained.

Abstract: A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 ?m, the dielectric layer has a thickness of from 0.3 to 5 ?m, and the conductor layer has a thickness of from 0.3 to 10 ?m. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 ?m, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 ?m, and a minimum via pitch is from 100 to 350 ?m.

Abstract: An information processing apparatus includes a detection unit configured to detect a damaged file from files stored in a cache area, a determination unit configured to determine whether the damaged file detected by the detection unit is restorable, a restoration unit configured to, if the determination unit determines that the damaged file is restorable, delete every restorable file in the cache area including the damaged file and restore the deleted file in the cache area, and an initialization unit configured to, if the determination unit determines that the damaged file is not restorable, delete every file in the cache area and initialize the cache area.

Abstract: There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.

Abstract: A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

Abstract: A method for controlling a vehicle to emanate an audible alert. The method includes determining when the vehicle is operating, and controlling a speaker system in the vehicle to emanate the audible alert outside of the vehicle for a period of time when the vehicle is operating. The audible alert has a sound profile that includes a simultaneous emanation of a first audible frequency component at a first sound pressure level and a second audible frequency component at a second sound pressure level, with the first and second sound pressure levels being greater than a sound pressure level of the sound profile at all other frequencies. The method further includes modulating the first sound pressure level of the first audible frequency component.