Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Abstract: According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry. The direct bandgap (DBG) semiconductor structure is optically coupled to the photonics circuitry.

Abstract: In one example, an apparatus includes e first beam splitter having a final output and a second output. A first optical waveguide is coupled to the first output, and a second optical waveguide is coupled to the second output. A first tunable phase delay is further coupled to the second optical waveguide and has a third output. A first set of phase modulators is coupled to the first optical waveguide, and a second set of phase modulators is coupled to the third output of the first tunable phase delay. At least one of the first set of phase modulators and the second set of phase modulators includes a phase modulator that is driven to three or more distinct phase states. A second beam splitter has a first input coupled to the first optical waveguide and a second input coupled to the second optical waveguide.

Abstract: An example system includes an optical modulator and a multiplexing controller. The modulator includes a data bus for receiving at least one data signal, a plurality of multiplexers and a plurality of modulating segments. Each multiplexer is coupled to the data bus to receive at least one data signal and to output a multiplexed signal. Each modulating segment may receive the multiplexed signal from one of the plurality of multiplexers and modulate the multiplexed signal using an optical input. The multiplexing controller may be in communication with the plurality of multiplexers and may configure each of the plurality of multiplexers in accordance with a selected modulation type.

Abstract: A directional backlight is disclosed. The directional backlight has a plurality of light sources to generate a plurality of input planar lightbeams. The plurality of input planar lightbeams illuminates a directional backplane that has a plurality of directional pixels to scatter the plurality of input planar lightbeams into a plurality of directional lightbeams. Each directional lightbeam has a direction and angular spread controlled by characteristics of a directional pixel in the plurality of directional pixels. The directional backlight can be used to generate a 3D image by specifying the characteristics of the directional pixels in the directional backplane.

Abstract: One example of a system includes an optical modulator, a push-pull driver, and a compensation circuit. The optical modulator has a nonlinear capacitance. The push-pull driver is electrically coupled across the optical modulator. The push-pull driver charges the capacitance in response to a logic ‘1’ of a level-shifted differential signal and discharges the capacitance in response to a logic ‘0’ of the level-shifted differential signal. The compensation circuit increases the speed of the discharge of the capacitance in response to the level-shifted differential signal transitioning from a logic ‘1’ to a logic ‘0’.

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Abstract: One example includes an optical port-shuffling module. The module includes a plurality of inputs to receive a respective plurality of optical signals. The module also includes a plurality of outputs to provide the respective plurality of optical signals from the optical port-shuffling module. The module further includes a plurality of total-internal-reflection (TIR) mirrors arranged in optical paths of at least a portion of the plurality of optical signals to reflect the at least a portion of the plurality of optical signals to at least a portion of the plurality of outputs to shuffle the plurality of optical signals between the plurality of inputs and the plurality of outputs.

Abstract: In the examples provided herein, a system includes a loop waveguide; and a grating coupler formed on the loop waveguide to couple light impinging on the grating coupler having a first polarization into the loop waveguide in a first direction, and to couple light having a second polarization, orthogonal to the first polarization, into the loop waveguide in a second direction. The system also includes a ring resonator positioned near the loop waveguide tuned to have a resonant wavelength at a first wavelength to couple light at the first wavelength out of the loop waveguide into the ring resonator. An output waveguide positioned near the ring resonator couples light out of the ring resonator into the output waveguide; and a photodetector detects light propagating out of a first end and a second end of the output waveguide.

Abstract: A directional backlight has a directional backplane that has a plurality of directional pixels configured to scatter a plurality of input planar lightbeams into a plurality of directional lightbeams. Each directional lightbeam has a direction and angular spread controlled by characteristics of a directional pixel in the plurality of directional pixels. A modulation layer having a plurality of modulators configured to modulate the plurality of directional lightbeams. The directional backlight is configured to generate a 3D image with multiple views by specifying the characteristics of the directional pixels in the directional backplane.

Abstract: Compact photonics platforms and methods of forming the same are provided. An example of a compact photonics platform includes a layered structure having an active region along a longitudinal axis, a facet having an angle no less than a critical angle formed at at least one longitudinal end of the active region, and a waveguide having at least one grating coupler positioned in alignment with the angled facet to couple light out to or in from the waveguide.

Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.

Abstract: In one example, a device includes a photodetector to generate an electrical signal in response to an optical signal and a transimpedance amplifier unit to receive the electrical signal. In one example, the transimpedance amplifier unit may include a first inverter unit, a second inverter unit coupled to the first inverter unit, and a third inverter unit coupled to the second inverter unit. In one example the third inverter unit may include a feedback resistor and a first n-type transistor in parallel to the feedback resistor, where the first n-type transistor is to provide a variable gain of the third inverter unit.

Abstract: One example includes an optical transmitter system. The system includes a waveguide to receive and propagate an optical signal. The system also includes a ring modulation system comprising a ring resonator that is optically coupled to the waveguide and is to resonate a given wavelength of the optical signal in response to an input data signal that is provided to a modulation amplifier to provide carrier injection to change a refractive index of the ring resonator to resonate the given wavelength of the optical signal to modulate the optical signal. The system further includes a tuning controller associated with the ring modulation system. The tuning controller can implement iterative feedback tuning of the ring modulation system based on a relative amplitude of an optical intensity of the given wavelength in the ring resonator and a variable reference amplitude to substantially stabilize the ring resonator with respect to the given wavelength.

Abstract: An active-control optical resonator includes an oxide layer; a ring resonator arranged in a loop and positioned on the oxide layer; a tangential optical waveguide optically coupled to the ring resonator; a translatable body configured to selectively move into an evanescent field region of the ring resonator; a first electrode positioned on the translatable body, the first electrode comprising indium tin oxide; and a second electrode positioned between the oxide layer and the ring resonator.

Abstract: Examples described herein relate to a driver circuit. In an example, the circuit includes a first input for receiving a first signal and a second input for receiving a second signal that is an inverse of the first signal. The circuit also includes a first driver array electrically coupling the first input to a first DC isolator and a first delay tap line electrically coupling the second input to the first DC isolator. The circuit further includes a second driver array electrically coupling the second input to a second DC isolator and a second delay tap line electrically coupling the first input to the second DC isolator. A carrier controller of the circuit is electrically coupled between the first DC isolator and the second DC isolator.

Abstract: A mode-controlled laser system includes an active region to generate optical energy in response to an electric signal. The system also includes a mirror to resonate the optical energy in an optical cavity. The system also includes a HCG mode control reflector arranged in the optical cavity to control the resonated optical energy into a substantially non-Gaussian intensity profile. The resonated optical energy can be emitted as an optical signal having the substantially non-Gaussian intensity profile.

Abstract: Compact photonics platforms and methods of forming the same are provided. An example of a compact photonics platform includes a layered structure having an active region along a longitudinal axis, a facet having an angle no less than a critical angle formed at least one longitudinal end of the active region, and a waveguide having at least one grating coupler positioned in alignment with the angled facet to couple light out to or in from the waveguide.

Abstract: A small-mode-volume, vertical-cavity, surface-emitting laser (VCSEL). The VCSEL includes an active structure to emit light upon injection of carriers, and two reflecting structures at least one of which is a grating reflector structure. The active structure is disposed within at least one of the reflecting structures. The reflecting structures are configured as a vertical-cavity resonator of small mode-volume. An optical-bus transmitter including a plurality of small-mode-volume VCSELs, and a system including at least one optical bus and at least one optical-bus transmitter in a digital-information processor, or a data-processing center, are also provided.

Abstract: According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry.