Abstract: According to an embodiment, a solid-state bidirectional switch includes a first and a second power field-effect transistor electrically connected anti-serial with each other. Each of the first and second power field-effect transistors includes a source region, a drain region, a body region forming a pn-junction with the source region and having an inversion channel region, a gate terminal, a drift region between the body region and the drain region and having an accumulation channel region, and a drift control region adjacent to the accumulation channel region. The accumulation channel region is controllable through the drift control region. The solid-state bidirectional switch further includes a controller connected with the gate terminals of the first and second power field-effect transistors.

Abstract: According to an embodiment, a solid-state bidirectional switch includes a first and a second power field-effect transistor electrically connected anti-serial with each other. Each of the first and second power field-effect transistors includes a source region, a drain region, a body region forming a pn-junction with the source region and having an inversion channel region, a gate terminal, a drift region between the body region and the drain region and having an accumulation channel region, and a drift control region adjacent to the accumulation channel region. The accumulation channel region is controllable through the drift control region. The solid-state bidirectional switch further includes a controller connected with the gate terminals of the first and second power field-effect transistors.

Abstract: An electronic device and manufacturing thereof. One embodiment provides a semiconductor chip having a control electrode and a first load electrode on a first surface and a second load electrode on a second surface. A first lead is electrically coupled to the control electrode. A second lead is electrically coupled to the first load electrode. A third lead is electrically coupled to the first load electrode, the third lead being separate from the second lead. A fourth lead is electrically coupled to the second load electrode, the second and third leads being arranged between the first and fourth leads.

Abstract: An electronic device and manufacturing thereof. One embodiment provides a semiconductor chip having a control electrode and a first load electrode on a first surface and a second load electrode on a second surface. A first lead is electrically coupled to the control electrode. A second lead is electrically coupled to the first load electrode. A third lead is electrically coupled to the first load electrode, the third lead being separate from the second lead. A fourth lead is electrically coupled to the second load electrode, the second and third leads being arranged between the first and fourth leads.

Abstract: A semiconductor device including: a heat sink, a die on the heat sink, resin encapsulating the die, and a mounting aperture in the resin having at least a segment between the heat sink and a first end of the resin, wherein the thickness of the heat sink is no greater than 35% of the thickness of the device.

Abstract: An electronic device and manufacturing thereof. One embodiment provides a semiconductor chip having a control electrode and a first load electrode on a first surface and a second load electrode on a second surface. A first lead is electrically coupled to the control electrode. A second lead is electrically coupled to the first load electrode. A third lead is electrically coupled to the first load electrode, the third lead being separate from the second lead. A fourth lead is electrically coupled to the second load electrode, the second and third leads being arranged between the first and fourth leads.

Abstract: A semiconductor device including: a heat sink, a die on the heat sink, resin encapsulating the die, and a mounting aperture in the resin having at least a segment between the heat sink and a first end of the resin, wherein the thickness of the heat sink is no greater than 35% of the thickness of the device.

Abstract: A power semiconductor module including a housing that has a housing wall and a base on which the housing is disposed. A number of semiconductor components are disposed on the base. A terminal element includes a portion contained in the housing wall, at least two terminal pins projecting from the housing wall, and an exposed lower part projecting into the housing from the housing wall. The portion of the terminal element contained in the wall and the lower part of the terminal element have a cross-section that is larger than the sum of the cross-sections of each of the terminal pins. The lower part of the terminal element is electrically connected to at least one of the semiconductor components.

Abstract: Inverter circuits are provided with bridge arms which, for example, including series-connected transistors (T1l , T2l ) with one freewheeling diode (D1, D2) each transistor. A critical operating state occurs when the recovery current is switched off by one of the diodes (D1, D2), so that the other transistor (T1l , T2l ) is cut in. The return current, which passes through this diode, can assume such high values, when rapidly cutting in the transistor, that the "dynamic" blocking capability of the diode is exceeded, and the diode is burnt out. The load current and the control current are thus reversed, so that the transistor is switched on more slowly and temporarily takes over part of the voltage which is normally applied to the diode.